525MM2 Search Results

Contextual Info: W3E16M64S-XBX 16Mx64 DDR SDRAM FEATURES BENEFITS  DDR Data Rate = 200, 250, 266Mbps  50% SPACE SAVINGS  Package: • 219 Plastic Ball Grid Array PBGA , 21 x 25mm  Reduced part count  2.5V ±0.2V core power supply  Reduced I/O count

7410

Abstract: 7410E WED3C7410E16M-XBHX WED3C750A8M-200BX WED3C7558M-XBX 90Sn10Pb 63SN 37PB CBGA 255 motorola
Contextual Info: PowerPC 7410E AltiVec™/2M Byte SSRAM HiTCE™ Multi-Chip Package Optimum Density and Performance in One Package WED3C7410E16M-XBHX* Features Product Features • 7410 AltiVec™ µProcessor • 16 Mbit of Synchronous pipeline burst SRAM configured as 256Kx72 L2 Cache

CI 7410

Abstract: 7410 frequency divider PIN CONFIGURATION 7410 cga motorola 7410 transistor 7410 PC7410 Multi-Chip Modules motorola
Contextual Info: PC7410 Microprocessor + 2MByte L2-Cache Multi-Chip Module Fact Sheet Main Features • • • • • • PC7410 RISC microprocessor 16 Mbit of Synchronous Pipelined Burst SRAM configured as 256Kx72 L2-Cache Extended temperature modules 1.8V (Core)/2.5V (I/0) for industrial and military applications

Contextual Info: PowerPC 7410E AltiVec™/2M Byte SSRAM HiTCE™ Multi-Chip Package Optimum Density and Performance in One Package WED3C7410E16M-XBHX* Features Product Features • 7410 AltiVec™ µProcessor • 16 Mbit of Synchronous pipeline burst SRAM configured as 256Kx72 L2 Cache

Contextual Info: 16M x 64 DDR SDRAM Multi-Chip Package Optimum Density and Performance in One Package W3E16M64S-XBX Performance Features VA N CE D DDR SDRAM Speed = 266, 250, 200MHz Core Supply Voltage = 2.5V ± 0.2V I/O Supply Voltage = 2.5V ± 0.2V - SSTL_2 compatible

W3E16M64S-XBX

Abstract: W3E32M64S-XBX
Contextual Info: White Electronic Designs W3E16M64S-XBX 16Mx64 DDR SDRAM FEATURES BENEFITS DDR Data Rate = 200, 250, 266Mbps 50% SPACE SAVINGS Package: • 219 Plastic Ball Grid Array PBGA , 21 x 25mm Reduced part count Reduced I/O count • 17% I/O Reduction 2.5V ±0.2V core power supply

WED3C750A8M-200BX

Contextual Info: PowerPC 750 /8Mbit SSRAM Multi-Chip Package Optimum Density and Performance in One Package WED3C7508M-200BX Features • • • A 200 MHz 750 RISC µProcessor 8 Mbit of Synchronous pipeline burst SRAM configured as 128Kx72 L2 Cache Extended temperature modules for industrial and military applications

Contextual Info: WEDPN4M72V-XBX HI-RELIABILITY PRODUCT 4Mx72 Synchronous DRAM PRELIMINARY* FEATURES GENERAL DESCRIPTION • High Frequency = 100, 125MHz The 32MByte 256Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing 67,108,864 bits.

Contextual Info: WEDPN8M72V-XBX HI-RELIABILITY PRODUCT 8Mx72 Synchronous DRAM PRELIMINARY* FEATURES GENERAL DESCRIPTION • High Frequency = 100, 125MHz The 64MByte 512Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing 67,108,864 bits.

Contextual Info: WEDPN8M72V-XB2X 8Mx72 Synchronous DRAM FEATURES GENERAL DESCRIPTION  High Frequency = 100, 125, 133MHz  Package: • 219 Plastic Ball Grid Array PBGA , 21 x 25mm  Single 3.3V ± 0.3V power supply  Fully Synchronous; all signals registered on positive edge

WEDPN16M72V-XB2X

Contextual Info: White Electronic Designs WEDPN16M72V-XB2X 16Mx72 Synchronous DRAM FEATURES GENERAL DESCRIPTION High Frequency = 100, 125, 133MHz Package: • 219 Plastic Ball Grid Array PBGA , 21 x 25mm Single 3.3V ±0.3V power supply Fully Synchronous; all signals registered on positive

Contextual Info: W3E16M64S-XBX White Electronic Designs 16Mx64 DDR SDRAM Advanced* FEATURES BENEFITS n High Frequency = 200, 250, 266MHz n 50% SPACE SAVINGS n Package: n Reduced part count n Reduced I/O count • 219 Plastic Ball Grid Array PBGA , 21 x 25mm n 2.5V ±0.2V core power supply

sram 1mbyte 3.3v

Abstract: 16x16 bga Multi-Chip Package MEMORY TQFP 100 PACKAGE footprint with or without underfill PC755B PCX755B
Contextual Info: PC755B Microprocessor + 1MByte L2-Cache Multi-Chip Module Fact Sheet Main Features • PC755B RISC microprocessor • 8 Mbit of Synchronous Pipelined Burst SRAM configured as 128Kx72 L2-Cache • Extended temperature modules 2.0V (Core)/3.3V (I/0) for industrial and military applications

ATMEL 322

Abstract: atmel 711 PC755B
Contextual Info: 3& 0LFURSURFHVVRU  0%\WH /&DFKH 0XOWL&KLS 0RGXOH DFW 6KHHW 0DLQ )HDWXUHV • PC755B RISC microprocessor • 8 Mbit of Synchronous Pipelined Burst SRAM configured as 128Kx72 L2-Cache) • Extended temperature modules 2.0V (Core)/3.3V (I/0) for industrial and military applications

Contextual Info: 16M x 64 DDR SDRAM Multi-Chip Package Optimum Density and Performance in One Package compatible VA N CE D W3E16M64S-XBX Performance Features • DDR SDRAM Speed = 266, 250, 200MHz • Core Supply Voltage = 2.5V ± 0.2V • I/O Supply Voltage = 2.5V ± 0.2V - SSTL_2

Contextual Info: PowerPC 7410E AltiVec™/2M Byte SSRAM Multi-Chip Package Optimum Density and Performance in One Package WED3C7410E16M-XBX* Features Product Features • 7410 AltiVec™ µProcessor • 16 Mbit of Synchronous pipeline burst SRAM configured • as 256Kx72 L2 Cache

WED3C7508M-200BX

Abstract: WED3C750A8M-200BX WEDPN8M72V-XBX
Contextual Info: PowerPC 750 /8Mbit SSRAM Multi-Chip Package WED3C750A8M Product Sheet Rev. 1 5/01 Optimum Density and Performance in One Package WED3C7508M-200BX Features • • • A 200 MHz 750 RISC µProcessor 8 Mbit of Synchronous pipeline burst SRAM configured as 128Kx72 L2 Cache

WEDPN16M72V-XB2X

Contextual Info: White Electronic Designs WEDPN16M72V-XB2X 16Mx72 Synchronous DRAM FEATURES GENERAL DESCRIPTION High Frequency = 100, 125MHz Package: • 219 Plastic Ball Grid Array PBGA , 21 x 25mm Single 3.3V ±0.3V power supply Fully Synchronous; all signals registered on positive

cga motorola

Abstract: WED3C750A8M-200BX 7410 7410E WED3C7410E16M-400BX TQFP 100 PACKAGE footprint we*400 Motorola PowerPC 7410 WED3C7410E16M-400 Multi-Chip Modules motorola
Contextual Info: PowerPC 7410E AltiVec™/2M Byte SSRAM Multi-Chip Package Optimum Density and Performance in One Package WED3C7410E16M-400BX* Features • • • • • A 400 MHz 7410 AltiVec™ µProcessor 16 Mbit of Synchronous pipeline burst SRAM configured as 256Kx72 L2 Cache

Contextual Info: White Electronic Designs W3E16M64S-XBX 16Mx64 DDR SDRAM FEATURES BENEFITS DDR Data Rate = 200, 250, 266Mbps 50% SPACE SAVINGS Package: • 219 Plastic Ball Grid Array PBGA , 21 x 25mm Reduced part count Reduced I/O count • 17% I/O Reduction 2.5V ±0.2V core power supply

Contextual Info: WEDPN16M72V-XB2X 16Mx72 SYNCHRONOUS DRAM FEATURES GENERAL DESCRIPTION  High Frequency = 100, 125, 133MHz The 128MByte 1Gb SDRAM is a high-speed CMOS, dynamic random-access, memory using 5 chips containing 268,435,456 bits. Each chip is internally configured as a quad-bank DRAM with

Contextual Info: WEDPN8M72V-XB2X 8Mx72 Synchronous DRAM FEATURES GENERAL DESCRIPTION  High Frequency = 100, 125, 133MHz  Package: • 219 Plastic Ball Grid Array PBGA , 21 x 25mm  Single 3.3V ± 0.3V power supply  Fully Synchronous; all signals registered on positive edge

Contextual Info: W3E16M64S-XBX 16Mx64 DDR SDRAM FEATURES BENEFITS  DDR Data Rate = 200, 250, 266Mbps  50% SPACE SAVINGS  Package: • 219 Plastic Ball Grid Array PBGA , 21 x 25mm  Reduced part count  2.5V ±0.2V core power supply  Reduced I/O count

with or without underfill

Abstract: WED3C7410E16M-400BX WED3C750A8M-200BX WED3C7558M-XBX WED3C755E8M-XBX 21mmx25mm
Contextual Info: PowerPC 755E/8Mbit SSRAM Multi-Chip Package Optimum Density and Performance in One Package WED3C755E8M-XBX Features • 300 or 350 MHz 755E Rev RISC µProcessor • 8 Mbit of Synchronous pipeline burst SRAM configured as 128Kx72 L2 Cache • Extended temperature modules 2.0V (Core)/3.3V (I/0) for