5235B Search Results

5235B

Abstract: 734F
Contextual Info: IB ST ZF 24 BAI 8/I Analog Input Module With 8 Channels Data Sheet 5235B 4 9 01/1999 Terminal Assignment 5 2 F 1 3 3 U S F F Us+ E U s + IN Terminal Signal F 2 3 6 E U S U s + T E R B 5235B000 IB S T M E 2 4 B A I 8 /I , O rd . N o .: 2 7 2 1 2 0 6 U S U L

siemens sab 82532

Abstract: 82258 SA 82532 SAB 80286 csc 2323 sab80286 STT 3 SIEMENS 80286 microprocessor pin out diagram ESCC2 siemens sab 82525
Contextual Info: SIEM ENS Enhanced Serial Communication Controller ESCC2 SAB 82532 Preliminary Data 1.1 CMOS 1C General Features S erial Interface • Two independent full duplex serial channels - On chip clock generation or external clock source - On chip DPLL for clock recovery of each

MMBZ 52368

Abstract: 5251B 8A SF sc 10 MARK 8E diode DIODE BZ mark 8m sot-23 ml25 5234B 5235B MMBZ5226B
Contextual Info: . , Discrete POWER & Signal Technologies Semiconductor" MMBZ5226B - MMBZ5257B Series Zeners Tolerance: B = 5% Absolute Maximum Ratings* TA = 25°C unless otherwise noted Parameter Storage Temperature Range Maximum Junction Operating Temperature Total Device Dissipation

PLCC-68 8051 siemens

Abstract: 80C32 smd marking b4h smd marking code fj FET 80C515 80C535 80c535-n ma A235 sab-80535 SMD MARKING CODE E2H
Contextual Info: I flB3SbOS 0002020 321 SIEMENS High-Performance 8-Bit CMOS Single-Chip Microcontroller SAB 80C515/80C535 Preliminary SAB 80C515/80C515-16 SAB 80CS35/80C535-16 CMOS microcontroller with factory mask-programmable ROM CMOS microcontroller for external ROM • 8 K x 8 ROM SAB 80C515 only

Q67100-H5092

Abstract: SDA 2516-5
Contextual Info: S IE M E N S Nonvolatile Memory 1-Kbit E2PROM SDA 2516-5 Preliminary Data MOS IC Features • • • • • • • • • • W ord-organized reprogrammable nonvolatile memory in n-channel floating-gate technology E2PROM 128 x 8-bit organization Supply voltage 5 V

Contextual Info: SIEM ENS High-Performance 8-Bit CMOS Single-Chip Microcontroller SAB 80C517/80C537 Advanced Information SAB 80C517 SAB 80C537 Microcontroller with factory mask-programmable ROM Microcontroller for external ROM • Versions for 12 MHz and 16 MHz operating frequency

5118160

Contextual Info: SIEM ENS 1M X 16-Bit Dynamic RAM 1k-Refresh HYB 5118160BSJ-50/-60/-70 Advanced Inform ation • • • 1 048 576 words by 16-bit organization 0 to 70 "C operating tem perature Fast access and cycle time RAS access time: 50 ns (-50 version) 60 ns (-60 version)

5118160

Abstract: AG71S 0071547 d0715 Q67100-Q1072 Q67100-Q1073 Q67100-Q1074
Contextual Info: SIEM ENS Olk -R e fiih DynamiC RAM HYB 5118160b s j -50/-60/-70 Advanced Inform ation 1 048 576 words by 16-bit organization 0 to 70 "C operating temperature Fast access and cycle tim e RAS access time: 50 ns -50 version) 60 ns (-60 version) 70 ns (-70 version)

AB 2.5K ANALOG DUAL POTENTIOMETER

Abstract: AD5235 ADN2841 M68HC11 MC68HC16R1 MC68HC916R1 OP279 OP42 TSSOP-16 ad5235bruz25
Contextual Info: Nonvolatile Memory, Dual 1024-Position Digital Potentiometer AD5235 FEATURES FUNCTIONAL BLOCK DIAGRAM CS AD5235 ADDR DECODE RDAC1 REGISTER CLK SDI SERIAL INTERFACE SDO PR WP RDY EEMEM1 POWER-ON RESET DWDM laser diode driver, optical supervisory systems Mechanical potentiometer replacement

Contextual Info: Z en er Diode mini^eei' BZX84C and MMBZ Series ±5% Volt Part Markings Type BZX84 Type MMBZ B Z X 84 C 2 V 4 B Z X 84 C 2 V 7 M M B Z 5221B M M B Z 5223B M M B Z 5225B M M B Z 5226B M M B Z 5228B M M B Z 5229B M M B Z 5230B M M B Z5231B M M B Z 5232B M M B Z 5234B

RWB 252

Abstract: AD5260 AD5235 AD5235B 5235B
Contextual Info: FEATURES Dual, 1024-Position Resolution 25 k⍀, 250 k⍀ Nominal Resistance Low Temperature Coefficient: 35 ppm/؇C Nonvolatile Memory1 Preset Maintains Wiper Settings Permanent Memory Write-Protection Wiper Settings Read Back Actual End-to-End Resistance Stored in EEMEM1

BC548 TRANSISTOR REPLACEMENT

Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
Contextual Info: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction

mmsz zener y5

Abstract: 5251B AH-16 transistor 5245b MMSZ5221B MMSZ5268B B4 SOD-123 5265B 5243B 5221b
Contextual Info: Certificate TH97/10561QM MMSZ5221B - MMSZ5268B Certificate TW00/17276EM ZENER DIODES SOD-123 VZ : 2.4 to 82 V PD : 500 mW FEATURES : 1.15 1.05 * Total Power Dissipation 500 mW on FR-4 or FR-5 Board * Wide Zener Reverse Voltage Range 2.4 V to 82 V * Package Designed for Optimal Automated Board Assembly

IN5252B

Abstract: IN5242B IN5230B IN5254B IN5226B IN5228B IN5256B IN5253B IN5241B IN5227B
Contextual Info: Te m ic 1N5221B.1N5267B T EL E FU N K E N Sem iconductors Silicon Z-Diodes Features • Very sharp reverse ch aracteristic • Very high stab ility • L ow reverse current lev e l • V ^ -to le ra n ce ± 5 % Applications V oltage stab ilization Absolute Maximum Ratings

Q729

Abstract: 16-DRAM Q67100-Q727
Contextual Info: SIE M E N S 256 K X 16-Bit Dynamic RAM Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh HYB 514171BJ-60/-70/-80 HYB 514171BJL-60/-70/-80 Advanced Information • • • 262 144 words by 16-bit organization 0 to 70 °C operating temperature Fast access and cycle time

Q67127-C2061

Abstract: safc505 F701H C505C Q67127-C2057 VR212
Contextual Info: SIEMENS Microcomputer Components 8-Bit CMOS Microcontroller C505 Data Sheet 12.97 fl2 3 5 b 0 5 O ld E Ib B 5CH • Edition 12.97 Published by Siemens AG, Bereich Halbleiter, MarketingKommunikation, Balanstraße 73, 81541 München Siemens AG 1997. All Rights Reserved.

Contextual Info: MMSZ5221B - MMSZ5272B ZENER DIODES SOD-123 VZ : 2.4 to 110 V PD : 500 mW 0.112 2.84 0.100(2.54) FEATURES : * Total Power Dissipation 500 mW on FR-4 or FR-5 Board * Wide Zener Reverse Voltage Range 2.4 V to 110 V * Package Designed for Optimal Automated Board Assembly

sot23 mark code e2

Abstract: 8q diode sot23 MARK 8F SOT-23 mark 8m sot-23 5252b 5251B 8C SOT-23 8F sot23 8Y SOT23 FAIRCHILD SOT-23 MARK 30
Contextual Info: Tolerance: B = 5% Absolute Maximum Ratings* TA = 25°C unless otherwise noted Parameter Storage Temperature Range Maximum Junction Operating Temperature 3 Value Units -55 to +150 °C + 150 °C mW mW/°C Total Device Dissipation Derate above 25°C 350 2.8 2

ma2820

Abstract: 5251B ZENER MARK 22 MMSZ5200 mark B2 MMSZ5257B RoHS Zener 5.1V 5228B 5233B MMSZ5226B
Contextual Info: Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units PD Power Dissipation @ 25°C 500 mW RθJA Thermal Resistance, Junction to Ambient * 340 °C/W Tstg Storage Temperature Range -55 to +150 °C TJ Operating Junction Temperature

MARK 8E diode

Abstract: 5248B 5231B diode mark 8m sot-23 5228B 5233B 5234B MMBZ5226B MMBZ5257B 5226B
Contextual Info: Series - MMBZ5257B MMBZ5226B tß D iscrete POWER & S ign al Technologies National Semiconductor" MMBZ5226B - MMBZ5257B Series Zeners T o le ra n c e : B = 5 % Absolute Maximum Ratings* T A = 2 5 ° C unless o th e rw ise noted Parameter Value Storage Temperature Range

ct Potentiometer

Abstract: AD5235 wiper speed controller ADN2841 M68HC11 MC68HC16R1 OP279 OP42 TSSOP-16 r2ra
Contextual Info: Nonvolatile Memory, Dual 1024-Position Digital Potentiometer AD5235 FEATURES APPLICATIONS DWDM laser diode driver, optical supervisory systems Mechanical potentiometer replacement Instrumentation: gain, offset adjustment Programmable voltage-to-current conversion

Contextual Info: MMBZ5226B - MMBZ5257B Series Zeners Tolerance: B = 5% Absolute Maximum Ratings* TA = 25°C unless otherwise noted Parameter Storage Temperature Range Maximum Junction Operating Temperature Total Device Dissipation Derate above 25°C 3 Value Units -55 to +150

52B zener

Abstract: 5233B 5241b SMBZ-5250B 47B SOT23 5252B SMBZ-5239B SMBZ-5245B SMBZ5230B SMBZ-5230B
Contextual Info: SMBZ5230 THRU SMBZ5257 SILICON PLANAR ZENER DIODES, 500mW, SOT-23 PACKAGE PACKAGE OUTLIN E DETAILS ALL DIM EN SION S IN m m Pin configuration 1 = ANODE 2 = NC 3 = CATHODE 3.0 2.6 0 .1 4 - * ^ 0.09 0.48 0.38 «a 3 44 2.6 RQ.1 .004 1-° ? 0.89 0,60 0.40 =

5252B

Abstract: 5223B 5245B 5237B 5254B 5225b
Contextual Info: DATA SHEET 1N5221B~1N5261B SILICON ZENER DIODES 2.4 to 47 Volts VOLTAGE 500 mWatts POWER DO-35 Unit: inch mm FEATURES .020(0.52)TYP. 1.02(26.0)MIN. • Planar Die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes