125W Search Results

TAS5611A

Abstract: TAs56 TAS5611APHD 2502W
Contextual Info: TAS5611A SLAS709B – JUNE 2010 – REVISED JULY 2011 www.ti.com 125W STEREO/250W MONO PurePath HD ANALOG-INPUT POWER STAGE Check for Samples: TAS5611A FEATURES APPLICATIONS • • • • • • 23 • • • • • • • • PurePath™ HD Enabled Integrated Feedback

12 volts,15 amps Regulated Power Supply Schematic Diagram

Abstract: extreme pressure grease NATC
Contextual Info: UVQ Series www.murata-ps.com Low Profile, Isolated Quarter Brick 2.5–40 Amp DC/DC Converters PRODUCT OVERVIEW Typical unit FEATURES  Standard quarter-brick package/pinout  Outputs from 1.5 to 48V up to 125W  Low profile 0.42" height 

Contextual Info: 2SK1969-01 N-channel MOS-FET FAP-IIIA Series 60V > Features - 0,017Ω 50A 125W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance Avalanche Proof Including G-S Zener-Diode > Applications

Contextual Info: θ µA Ʊ ≤ Typical Output Characteristics Typical Output Characteristics 12 8 Drain Current A Vgs = 8V 8 Drain Current Id (A) Pch = 125W 10 Vgs = 7V Vgs = 6V 6 Vgs = 5V Vgs = 4V Vgs = 3V Vgs = 2V Vgs = 1V 4 2 20 40 VDS (V) 7 Vgs = 8V 6 Vgs = 7V 5 Vgs = 6V

Contextual Info: m RT-125 125W Triple Output Switching Power Supply series I Features : Protections: Short circuit / Overload / O vervoltage Cooling by free air convection LED indicator for power on 100% full load burn-in test All using 105°C long life electrolytic capacitors

wireless subwoofer circuit diagram

Contextual Info: TAS5612 www.ti.com SLAS682 – NOVEMBER 2009 125W STEREO / 250W MONO PurePath HD DIGITAL-INPUT POWER STAGE Check for Samples: TAS5612 FEATURES APPLICATIONS • PurePath™ HD Enabled Integrated Feedback Provides: – Signal Bandwidth up to 80kHz for High

TAs56

Abstract: 2502W TAS5631
Contextual Info: TAS5612 www.ti.com SLAS682 – NOVEMBER 2009 125W STEREO / 250W MONO PurePath HD DIGITAL-INPUT POWER STAGE Check for Samples: TAS5612 FEATURES APPLICATIONS • PurePath™ HD Enabled Integrated Feedback Provides: – Signal Bandwidth up to 80kHz for High

BU908

Abstract: NPN Transistor 1.5A 700V NPN Transistor 1500V 700 v power transistor
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU908 DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 700V (Min) ·High Power Dissipation: PD= 125W@TC= 25℃ APPLICATIONS ·Designed for use in color TV horizontal deflection circuits.

PPS-125-5

Abstract: PPS-125 PPS-125-12
Contextual Info: PPS-125 125W Single Output with PFC Function series Features : Universal AC input / Full range Built-in active PFC function Protections: Short circuit / Overload / Over voltage PWM control and regulated High power density 6.117W/inch3 Built-in remote sense function

RD-125

Abstract: RD-125A RD-125B
Contextual Info: RD-125 125W Dual Output Switching Power Supply series Features : Protections: Short circuit / Overload / Over voltage Cooling by free air convection LED indicator for power on 100% full load burn-in test All using 105 long life electrolytic capacitors Withstand 300VAC surge input for 5 second

C362

Abstract: 12.5W
Contextual Info: C362 適応範囲 作動周波数 アノード電圧 フォーカス電圧 パワーmax 25-34inch color TV 15.625-31.75kHz 30-33kV 6-11kV 125W

MARKING 68W SOT-23

Abstract: marking code 67a sot23 6 sot143 Marking code 5B baw 92 SOT-363 marking CF 54 fk SOT-23 BAT 545 SOT-363 marking BF sot-89 MARKING CODE BN MARKING CODE DH SOT 23
Contextual Info: Marking Sorted by Code Marking Type Package Marking Type Package 13 13s 14 14s 15 15s 16 16s 17 17s 1A 1A 1A 1As 1B 1B 1Bs 1Bs 1C 1D 1D 1Ds 1E 1Es 1F 1F 1Fs 1G 1G 1G 1Gs 1J 1J 1Js 1K 1K 1K 1K BAS 125 BAS 125W BAS 125-04 BAS 125-04W BAS 125-05 BAS 125-05W BAS 125-06

2SD676

Abstract: 2SB656
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistors 2SB656 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -160V(Min) ·High Power Dissipation: PC= 125W(Max)@TC=25℃ ·Complement to Type 2SD676 APPLICATIONS ·Designed for low frequency power amplifier applications.

Contextual Info: FU JI 2SK2765-01 S iL tìls u U tìU K FAP-IIS Series N-channel MOS-FET > Features - 20, 800V 7A 125W > Outline Drawing TO-3P High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated

05815A

Abstract: 500V0 2SK1279 UA3000 MOSFET 500V 15A
Contextual Info: 2SK1279 N-channel MOS-FET F-V Series 500V > Features 0,58Ω 15A 125W > Outline Drawing - Include Fast Recovery Diode - High Voltage - Low Driving Power > Applications - Motor Control - Inverters - Choppers > Maximum Ratings and Characteristics > Equivalent Circuit

Contextual Info: 125WT Micro-Measurements General Purpose Strain Gages - Tee Rosette GAGE PATTERN DATA GAGE DESIGNATION RESISTANCE OHMS OPTIONS AVAILABLE See Note 1 CEA-XX-125WT-120 CEA-XX-125WT-350 120 ± 0.5% 350 ± 0.5% DESCRIPTION Two-element 90° tee stacked rosette.

2SK2899-01R

Contextual Info: 2SK2899-01R N-channel MOS-FET FAP-IIIB Series 60V > Features - 6,5mΩ ±100A 125W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters

2SK2081-01

Contextual Info: 2SK2081-01 N-channel MOS-FET FAP-IIA Series 500V > Features - 0,6Ω 12A 125W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators

2SK2755-01

Contextual Info: 2SK2755-01 N-channel MOS-FET FAP-IIS Series 450V > Features - 0,45Ω 18A 125W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Applications -

Contextual Info: MCC
  omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components HDWXUHV • • MJ431  10 Amp NPN Silicon Power Transistors 125W Collector-Emitter Voltage: VCEX=400V Min)

13.56mhz power

Abstract: power amplifier, 13.56MHz ARF440
Contextual Info: ADVANCED POW ER Te c h n o l o g y ARF440 ARF441 125W 50V 13.56MHz 125W 50V 13.56MHz THE ARF440 PIN-OUTS ARE MIRROR IMAGE OF THE ARF441. RF OPERATION 1-15MHz POWER MOS IV* N -C H A NN EL ENHANCEMENT MODE RF POWER MOSFET ;- if>!EÜ I Æ The ARF440 and ARF441 comprise a symmetric pair of RF power transistors designed for narrow-band push-pull

Contextual Info: bOE D SEMELAB • Ô1331Ô7 GDDD'ìPfl PLC Sb? «S flL B SEMELAB D1010UK NEW PRODUCT RF SILICON FET GOLD METALLISED MULTI-PURPOSE SILICON DMOSRFFET 125W -28V-400M HZ PUSH-PULL M E C H A N IC A L D A TA Dimensions FEATURES • EXTRA LOW PIN1 SOURCE COMMON

1455

Abstract: D1021UK
Contextual Info: TetraFET D1021UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 125W – 28V – 400MHz PUSH–PULL A C B 2 pls K 3 2 1 E D 5 4 G (4 pls) F FEATURES • SIMPLIFIED AMPLIFIER DESIGN H J M I N • SUITABLE FOR BROAD BAND APPLICATIONS

12 volts,15 amps Regulated Power Supply Schematic Diagram

Contextual Info: UVQ Series www.murata-ps.com Low Profile, Isolated Quarter Brick 2.5–40 Amp DC-DC Converters PRODUCT OVERVIEW Typical unit FEATURES  Standard quarter-brick package/pinout  Outputs from 1.5 to 48V up to 125W  Low profile 0.42" height 