5218 CHIP IC Search Results

5218 chip ic

Abstract: 53S881F
Contextual Info: ADV M IC R O 14‘ E D I MEMORY 0257555 0027871 a 2 5 53/63S881/A Advanced Micro Devices High Performance 1024x8 PROM TiW PROM Family FEATURES/BENEFITS T APPLICATIONS • 30-ns maximum access time • Microprogram control store • Reliable tltanlum-tungsten fuses TiW guaran­

Contextual Info: a 53/63S881/A Advanced Micro Devices High Performance 1024x8 PROM TiW PROM Family FEATURES/BENEFITS APPLICATIONS • 30-ns maximum access time • Microprogram control store • Reliable titanium-tungsten fuses TIW guaran­ tee greater than 98% programming yields

ic 5218 a

Abstract: 5218 chip ic
Contextual Info: Tem ic 7541/7542 MATRA MHS Single Rail Low Voltage 3.0 V CODEC Description 7541 n-law and 7542 (A - law) are CM OS devices containing a companding C O D EC And PCM voice filters on a single chip. The most featured point is to operate with a single power supply, which provides cost effective design

03602B

Contextual Info: Am2924 Am2924 Three-Line to Eight-Line Decoder/Demultiplexer DISTINCTIVE CHARACTERISTICS • • Advanced Schottky technology Inverting and non-inverting enable inputs GENERAL DESCRIPTION The Am2924 is a 3-line to 8-line decoder/demultiplexer fabricated using advanced Schottky technology. The de­

PM61300

Abstract: PM1008S BOURNS JW MILLER 9230-94-RC AXIAL INDUCTOR 2100LL FB43-110 5731 IC0730 smd H series transistors transistor 5609 SFR3216
Contextual Info: INDUCTIVE COMPONENTS Bourns Manufacturers Representatives Corporate Distributor Product Managers Americas Sales Team Asia Sales Team Europe Sales Team Bourns Internal Bourns Plant Managers March 2007 UPDATE - Bourns Inductors Replacing JW Miller Models The current summary of Bourns® inductor models that will be replacing JW Miller models is attached.

Contextual Info: Tem ic 7541/7542 MATRA MHS Single Rail Low Voltage 3.0 V CODEC Description 7541 n-law and 7542 (A - law) are CMOS devices containing a companding CODEC And PCM voice filters on a single chip. The most featured point is to operate with a single power supply, which provides cost effective design

PM1008S

Abstract: PM61300 z326 IC0730 PM104 PM105 PM125SH 2101-V PM334 5609 5610
Contextual Info: Bourns Manufacturers Representatives Corporate Distributor Product Managers Americas Sales Team Asia Sales Team Europe Sales Team Bourns Internal Bourns Plant Managers March 2007 UPDATE - Bourns Inductors Replacing JW Miller Models The current summary of Bourns® inductor models that will be replacing JW Miller models is attached.

amd AM2 PIN LAYOUT

Contextual Info: Am2924 Am2924 Three-Line to Eight-Line Decoder/Demultiplexer DISTINCTIVE CHARACTERISTICS • Advanced Schottky technology • Inverting and non-inverting enable inputs GENERAL DESCRIPTION The Am2924 is a 3-line to 8-line decoder/demultiplexer fabricated using advanced Schottky technology- The de­

icl8083

Abstract: ICL8063 equivalent 2n3055 Equivalent ICL8063CPE ICL8063 2N3055 equivalent transistor NUMBER 2N3055 power amplifier circuit power amplifier transformer 2n3055 pin configuration transistor 2n3055 2N3055 diagram with power supply
Contextual Info: ONüniran ICL8063 Power Transistor Driver-Amplifier Designed to operate with all varieties of operational amplifiers and other functions, two external power transistors o f any construction technique, and 8 to TO passive components, the ICL8063 is ideal for use in such

4233A

Abstract: 535x 184 324 DIODE 2N5383 2N3055C
Contextual Info: Contran ÄTTM,© STAND ARD PART LIST [continued] Devices. Inc STANDARD DIODE CHIP SELECTIONS PART No. Vr MIN. VO LTS Vp@ M AX. VO LTS If A M PS. trr N SE C . PA G E No. 5 31X C 003 531X C 004 532X C 001 532X C 002 532X C 003 100 400 50 80 100 1.3 1.8

MICROWAVE ASSOCIATES

Abstract: 2.5 GHz RF power transistors with s-parameters RF transistors with s-parameters TIP 298 MA4F600
Contextual Info: n/A-COn ADVANCED Sfl DE J S b 4 E l f l 3 □□□□017 T jp D J- 3t~Z? MfoCCA MA4F001 Series Gallium Arsenide Field Effect Transistors Description The MA4F001 series of gallium arsenide fieldeffect transistors GaAs FETs is a series of low power Schottky barrier gate devices with a 1

MA4F004

Contextual Info: Vv M/A-COM ADVANCED DE |st,4aifl3 ODDDDCH □ | ' 7 ' 3 / ' ^ 5 A ßm MA4F004 Series Gallium Arsenide Field Effect Transistor Description Features The MA4F004 series of gallium arsenide fieldeffect transistors GaAs FETs is a series of Schottky barrier devices with a 1 micron length X

A12L

Abstract: A13L CY7C09159 CY7C09169 AN 5218
Contextual Info: fax id: 5218 51 CY7C09159 CY7C09169 PRELIMINARY 8K/16K x 9 Synchronous Dual-Port Static RAM Features • True Dual-Ported memory cells which allow simultaneous access of the same memory location • 2 Flow-Through/Pipelined devices — 8K x 9 organization CY7C09159

PTC XK

Contextual Info: fax id: 5218 :/ CYPRESS CY7C09159 CY7C09169 8K/16K x 9 Synchronous Dual-Port Static RAM • High-speed clock to data access 6.5/7.5/12 ns max. • Low operating power Features • True Dual-Ported m em ory cells which allow simu Itaneous access of the same memory location

Contextual Info: AMDB Am29LV081 B 8 Megabit 1 M x 8-Bit CMOS 3.0 Volt-only Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • Optimized architecture for Miniature Card and mass storage applications ■ Single power supply operation — 2.7 to 3.6 volt read and write operations for

F6800

Abstract: F6850 F6850C F6850DL F6850DM F68A50 F68A50C F68B50 F6850P ACIA
Contextual Info: FAIRCHILD A S chlum berger Com pany F6850/F68A50/F68B50 Asynchronous Communications Interface Adapter ACIA Microprocessor Product Description The F6850 Asynchronous Comm unications Interface Adapter (ACIA) provides the data formatting and control to interface

556 IC TIMER

Abstract: XR-L556 XR-L556CN xr-l555 XR-L556CP IC 556 pin DIAGRAM XR-556 function of 556 IC TIMER 556 pinout diagram 556 timer
Contextual Info: EX4R XR-L556 Micropower Dual Timer GENERAL DESCRIPTION FUNCTIONAL BLOCK DIAGRAM The XR-L556 dual timer contains two independent mi­ cropower timer sections on a monolithic chip. It is a di­ rect replacement for the conventional 556-type dual timers, for applications requiring very low power d issi­

Contextual Info: AmPALC29M Al 6 24-Pin E2-Based CMOS Programmable Array Logic ADVANCE INFORMATION Distinctive Characteristics • • • • • High-performance semi-custom logic replacement; Electrically Erasable E2 technology allows repro­ grammability 16 bidirectional user-programmable I/O logic macro­

HP3330B

Contextual Info: SILICONIX INC 03 8254735 SILICONIX DiEJ ÛBS4735 0015H40 1 INC 03E 12240 DG400-405 Low-Power - High-Speed CMOS Analog Switches j y Silîconlx Incorporated T-51-11 FEATURES BENEFITS APPLICATIONS • +15. V Input Range • Wide Dynamic Range • ON Resistance < 35 Cl

A31-1

Contextual Info: TEXAS INSTR ASIC/MEMORY 77C D • 0^1725 G0M0Ö41 =1 TM4256FL8, TM4256GU8, TM4257FL8, TM4257GU8 262,144 BY 8 BIT DYNAMIC RAM MODULES ADVANCE INFORMATION ISEO NOVEMBER 1985 OCTOBER 1985 - REVISEI T M 4 2 5 .F L 8 . . . L SINGLE-IN-LINE PACKAGE 2 6 2 ,1 4 4 X 8 Organization

AM29F010

Abstract: Am29F002N
Contextual Info: AMD SI P R E L I M I N A R Y ERASE AND PROGRAMMING PERFORMANCE Parameter Typ Note 1 Max (Note 2) Unit 1 8 sec 32 256 sec 7 300 US 14.4 43.2 sec Sector Erase Time Chip Erase Time Byte Programming Time Chip Programming Time (Note 3) Comments Excludes OOh programming prior to

tic 32

Contextual Info: bq4842Y fe f BENCHMARQ RTC Module With 128Kx8 NVSRAM Features General Description ► I n t e g r a t e d SR A M , r e a l - t i m e clock, CPU su p erv iso r, c ry s ta l, p o w er-fail c o n tro l c irc u it, a n d b attery The bq4842Y RTC Module is a non­

HP330B

Abstract: DG400-405 DG400DJ DG402DJ DG404DJ DG400 DG404
Contextual Info: H gSS«* DG400-405 Low-Power - High-Speed CMOS Analog Switches FEATURES BENEFITS APPLICATIONS • +15 V Input Range • Wide Dynamic Range • ON Resistance < 35 f l • Low Signal Errors and Distortion • High Performance Audio and Video Switching • Fast Switching Action

Contextual Info: in tj, 87C196KD 16-BIT HIGH PERFORMANCE CHMOS MICROCONTROLLER Automotive • —40°C to + 125°C ■ Full Duplex Serial Port ■ 32 Kbytes of On-Chip EPROM ■ High Speed I/O Subsystem ■ 232 Byte Register File ■ 16-Bit Timer ■ 768 Bytes of Additional RAM