52050 Search Results

AMIS 690

Abstract: AMIS-52050 RX1 433MHZ
Contextual Info: AMIS-52050 Single-Chip Radio Transceiver Data Sheet 1.0 Introduction The AMIS-52050 is a low cost, ultra-low power amplitude shift keying/on-off shift keying ASK/OOK transceiver intended for narrow band RF applications. The device is targeted for applications at 433MHz but can operate from 260 to 700MHz. The adjustable RF

19293-001-XTP

Abstract: AMIS-52150 70TX
Contextual Info: AMIS-52150 Low-Power Transceiver with Clock and Data Recovery Data Sheet 1.0 Introduction The AMIS-52150 is a cost-effective, ultra-low power single-chip wireless transceiver. It combines the proven Amplitude Shift Key/On-Off Key ASK/OOK modulation technology of the AMIS-52050 with data clock recovery.

52150

Abstract: AMIS-52150 AMIS-52150-XTD AMIS-52150-XTP AMIS
Contextual Info: AMIS-52150 Low-Power Transceiver with Clock and Data Recovery 1.0 Introduction The AMIS-52150 is a cost-effective, ultra-low power single-chip wireless transceiver. It combines the proven Amplitude Shift Key/On-Off Key ASK/OOK modulation technology of the AMIS-52050 with data clock recovery.

Contextual Info: C orporate Hom e | Electronic Components | Se gm e nts | W ho W e Are My Account Searc h Products Documentation Resources My Account Customer Support Home > Products > By Type > Shielded Data Link SDL > Product Feature Selector > Product Details 5-520501-6 Product Details

Contextual Info: AMIS-52150 Low-Power Transceiver with Clock and Data Recovery Data Sheet 1.0 Introduction The AMIS-52150 is a cost-effective, ultra-low power single-chip wireless transceiver. It combines the proven Amplitude Shift Key/On-Off Key ASK/OOK modulation technology of the AMIS-52050 with data clock recovery.

inductors 50 micro-henry

Contextual Info: EMI Common Mode Suppression Inductors Page 1 of 5 EMI Common Mode Suppression Inductors SURFACE MOUNT PICO surface mount units utilize materials and methods to withstand extreme temperatures of vapor phase, I.R., and other reflow procedures without degradation

Contextual Info: STRH100N6 Rad-Hard N-channel, 60 V, 40 A Power MOSFET Datasheet - production data Features VDSS ID RDS on Qg 60 V 40 A 12 mΩ 134.4 nC • Fast switching • 100% avalanche tested 3 1 • Hermetic package 2 • 70 krad TID • SEE radiation hardened TO-254AA

Contextual Info: K&L Microwave Product Catalog Table of Contents ◆ About K&L Microwave 4 ◆ ◆ Terms & Definitions 8 ◆ Suspended Substrate ◆ Specifying Filters 10 ◆ Topology vs. Frequency Range 14 ◆ Lumped Components 17  K L-fil Ceramic Filters E 71 -Bandpass — SB Series

MIL-STD-750E

Abstract: STRH100N10 STRH100N10FSY1
Contextual Info: STRH100N10 N-channel 100 V, 0.030 Ω, TO-254AA rad-hard low gate charge STripFET Power MOSFET Features VBDSS ID RDS on Qg 100 V 48 A 30 mOhm 135 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 70 krad TID ■ Single event effect (SEE) hardened

CK3121

Abstract: CK3122 Hearing Aid Circuit Diagram ER312 hearing aid integrated circuits Knowles es series f1230 EK3024 circuit diagram of hearing aid hearing aid chip
Contextual Info: GL504-GH580, GK504-GH580 APPLICATION NOTE DESCRIPTION consider the connection as shown in Fig. 1. Pin 4 of the GL504 has a typical DC bias voltage of 0.6V and pin 8 of the GH580 is nominally 0.3V. Therefore in order to keep the capacitor reverse biased we must connect pin 4 of the GL504 at 0.6V

RAD SMD MARKING CODE

Abstract: smd diode marking code TO3
Contextual Info: STRH40N6 Rad-Hard N-channel 60 V, 30 A Power MOSFET Datasheet - production data Features VBDSS ID RDS on Qg 60 V 30 A 36 mOhm 43 nC • Fast switching • 100% avalanche tested • Hermetic package • 70 krad TID • SEE radiation hardened SMD.5 Applications

Contextual Info: STRH100N10 Rad-Hard 100 V, 48 A N-channel Power MOSFET Datasheet - production data Features VBDSS ID RDS on Qg 100 V 48 A 30 mΩ 135 nC • Fast switching • 100% avalanche tested 3 1 • Hermetic package 2 • 70 krad TID TO-254AA • SEE radiation hardened

Contextual Info: STRH8N10 Rad-Hard 100 V, 6 A N-channel Power MOSFET Datasheet - production data Features VDSS ID RDS on Qg 100 V 6A 0.30 Ω 22 nC • Fast switching • 100% avalanche tested • Hermetic package • 70 krad TID SMD0.5 • SEE radiation hardened Applications

Contextual Info: STRH40P10 Rad-Hard P-channel 100 V, 34 A Power MOSFET Datasheet - production data Features VBDSS ID RDS on Qg 100 V 34 A 0.060 Ohm 162 nC • Fast switching • 100% avalanche tested 3 1 • Hermetic package 2 • 100 krad TID TO-254AA • SEE radiation hardened

Contextual Info: 8 DRAWING MADE IN THIRD ANGLE PROJECTION THIS DRAWING IS UNPUBLISHED. RELEASED FOR PUBLICATION COPYRIGHT 19 BY AMP INCORPORATED. 7 6 5 3 4 2 LOC DIST 50 BD ALL INTERNATIONAL RIGHTS RESERVED. 1 REVISIONS ZONE LTR R T U V w Y D -3 „43 [. 1 35] TYP 4. 0 6 [. 1 60]

Contextual Info: Lumped Components, Low Frequency, Narrow Bandwidth — MC Series ◆ Features: • Miniature Package Design Yielding State of the Art Performance • Ruggedized Package to Withstand Severe Environmental Stress • Covers the 60 to 3000 MHz Frequency Range

inductors 78 micro-henry

Abstract: 46430
Contextual Info: EMI Common Mode Suppression Inductors Page 1 of 2 EMI Common Mode Suppression Inductors SURFACE MOUNT PICO surface mount units utilize materials and methods to withstand extreme temperatures of vapor phase, I.R., and other reflow procedures without degradation of electrical or mechanical characteristics.

Contextual Info: STRH100N6 Rad-Hard N-channel, 60 V, 40 A Power MOSFET Datasheet - production data Features VDSS ID RDS on Qg 60 V 40 A 12 mΩ 134.4 nC • Fast switching • 100% avalanche tested 3 1 • Hermetic package 2 • 70 krad TID • SEE radiation hardened TO-254AA

Contextual Info: STRH40P10 Rad-Hard P-channel 100 V, 34 A Power MOSFET Datasheet - production data Features VBDSS ID RDS on Qg 100 V 34 A 0.060 Ohm 162 nC • Fast switching • 100% avalanche tested 3 1 • Hermetic package 2 • 100 krad TID TO-254AA • SEE radiation hardened

Contextual Info: STRH8N10 Rad-Hard 100 V, 6 A N-channel Power MOSFET Datasheet - preliminary data Features VDSS ID RDS on Qg 100 V 6A 0.30 Ω 22 nC • Fast switching • 100% avalanche tested • Hermetic package • 70 krad TID SMD0.5 • SEE radiation hardened Applications

Contextual Info: STRH40N6 Rad-Hard N-channel 60 V, 30 A Power MOSFET Datasheet - production data Features VBDSS ID RDS on Qg 60 V 30 A 36 mOhm 43 nC • Fast switching • 100% avalanche tested • Hermetic package • 70 krad TID • SEE radiation hardened SMD.5 Applications

4006E

Abstract: gp 845 3004F
Contextual Info: 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 4 6 3 2 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC ALL RIGHTS RESERVED. R E VIS IO N S D IS T GP 00 LTR AE1 D DATE DESCRIPTION DWN 10JU N 07 REVISED PER EC O -07- 004340 APVD JDP CWR D - 3 .4 3

WJ A39

Contextual Info: uuU A39/SMA39 10 to 2000 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT HIGH OUTPUT POWER: +22 dBm TYP. HIGH THIRD ORDER I.P.: +34 dBm (TYP) WIDE BANDWIDTH: 10-2000 MHz Outline Drawings Specifications A39 Characteristics Frequency (Min.)

EN50019

Contextual Info: Cable Glands & Accessories For Finishing Services, Product Support, or to Order Call 1-301-696-9800 Bopla Enclosures • 7330 Executive Way • Frederick, MD 21704 • 301-696-9800 • www.Rose-Bopla.com • E-mail: RBinfo@pm-usa.com Last Update November 2012