STRH40N6 Search Results
STRH40N6 Price and Stock
STMicroelectronics STRH40N6SG- Bulk (Alt: STRH40N6SG) |
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STRH40N6SG | Bulk | 10 |
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STMicroelectronics STRH40N6S1- Bulk (Alt: STRH40N6S1) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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STRH40N6S1 | Bulk | 10 |
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STRH40N6S1 | 53 Weeks | 1 |
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STRH40N6S1 | 871 |
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STRH40N6 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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STRH40N6SY1
Abstract: JESD97 STRH40N6SY3
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strh40n6sy1strh40n6sy3100krad34mev/cm+1 | |
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Contextual Info: STRH40N6SY3 N-channel 60V - 0.032Ω - SMD-0.5 Rad-hard low gate charge STripFET Power MOSFET PRELIMINARY DATA General features Type VDSS STRH40N6SY3 60V • Exceptional dv/dt capability ■ 100% avalanche tested ■ Application oriented characterization |
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strh40n6sy3 | |
RAD SMD MARKING CODE
Abstract: smd diode marking code TO3
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strh40n6strh40n6s1docid18351rad smd marking code+1 | |
st smd diode marking to3Contextual Info: STRH40N6 Rad-Hard P-channel 60 V, 30 A Power MOSFET Datasheet — production data Features VBDSS ID RDS on Qg 60 V 30 A 36 mOhm 43 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 70 krad TID ■ SEE radiation hardened SMD.5 Applications |
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strh40n6strh40n6sst smd diode marking to3 | |
smd DIODE code marking 20A
Abstract: smd code diode 20a STRH40N6SY1 STRH40N6SY3
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strh40n6sy3100krad34mev/cmsmd diode code marking 20a+2 | |
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Contextual Info: STRH40N6 Rad-Hard N-channel 60 V, 30 A Power MOSFET Datasheet - production data Features VBDSS ID RDS on Qg 60 V 30 A 36 mOhm 43 nC • Fast switching • 100% avalanche tested • Hermetic package • 70 krad TID • SEE radiation hardened SMD.5 Applications |
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strh40n6strh40n6s1strh40n6sg | |
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Contextual Info: STRH40N6SY3 N-channel 60V - 0.032Ω - SMD-0.5 Rad-hard low gate charge STripFET Power MOSFET PRELIMINARY DATA General features Type VDSS STRH40N6SY3 60V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge |
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strh40n6sy3100krad34mev/cm | |
HV33010Contextual Info: STRH40N6 Rad-Hard P-channel 100 V, 30 A Power MOSFET Features VBDSS ID RDS on Qg 60 V 30 A 36 mOhm 43 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 70 krad TID ■ SEE radiation hardened SMD.5 Applications ■ Satellite ■ High reliability |
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strh40n6strh40n6s1strh40n6sghv33010 | |
st smd diode marking to3
Abstract: 0301 smd STRH40N6SG
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strh40n6strh40n6sst smd diode marking to30301 smd+1 | |
st smd diode marking to3
Abstract: smd diode marking code TO3 mosfet SMD MARKING CODE 352 STRH40N6 STMicroelectronics smd DIODE marking code smd st diode marking to3 STRH40N6SY1 smd diode order marking code stmicroelectronics smd K 739 mosfet
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strh40n6strh40n6sy1st smd diode marking to3smd diode marking code to3+5 | |
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Contextual Info: STRH40N6 Rad-Hard N-channel 60 V, 30 A Power MOSFET Datasheet - production data Features VBDSS ID RDS on Qg 60 V 30 A 36 mOhm 43 nC • Fast switching • 100% avalanche tested • Hermetic package • 70 krad TID • SEE radiation hardened SMD.5 Applications |
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strh40n6strh40n6s1 | |
STRH40N6SGContextual Info: STRH40N6 Rad-Hard P-channel 60 V, 30 A Power MOSFET Datasheet — production data Features VBDSS ID RDS on Qg 60 V 30 A 36 mOhm 43 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 70 krad TID ■ SEE radiation hardened SMD.5 Applications |
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strh40n6strh40n6s1strh40n6sg | |
st smd diode marking to3Contextual Info: STRH40N6 Rad-Hard P-channel 100 V, 30 A Power MOSFET Preliminary data Features VBDSS ID RDS on Qg 60 V 30 A 36 mOhm 43 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 70 krad TID ■ SEE radiation hardened SMD.5 Applications ■ Satellite |
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strh40n6strh40n6s1strh40n6sst smd diode marking to3 | |
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Contextual Info: STRH40N6 Rad-Hard N-channel 60 V, 30 A Power MOSFET Datasheet - production data Features VBDSS ID RDS on Qg 60 V 30 A 36 mOhm 43 nC • Fast switching • 100% avalanche tested • Hermetic package • 70 krad TID • SEE radiation hardened SMD.5 Applications |
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strh40n6strh40n6s1 | |
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