512KX8 BIT LOW POWER CMOS STATIC RAM Search Results
512KX8 BIT LOW POWER CMOS STATIC RAM Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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27S03ADM/B |
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27S03A - 64-Bit, Low Power Biploar SRAM |
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27S03ALM/B |
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27S03A - 64-Bit, Low Power Biploar SRAM |
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HM4-6504S-8/B |
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HM4-6504 - Standard SRAM, 4KX1, 220ns, CMOS |
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27S03A/BEA |
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27S03A - 64-Bit, Low Power Biploar SRAM - Dual marked (8605105EA) |
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27S07ADM/B |
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27S07A - Standard SRAM, 16X4 |
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512KX8 BIT LOW POWER CMOS STATIC RAM Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: KM684000A Family_ CMOS SRAM 512Kx8 bit Low Power CMOS Static RAM FEATURES GENERAL DESCRIPTION •• Process Technology : 0.4 * CMOS •• Organization : 512Kx8 •■ Power Supply Voltage : Single 5V •• 10% ■ Low Data Retention Voltage : 2V Min |
OCR Scan |
KM684000A 512Kx8 512Kx8 32-DIP, 32-SOP, 32-TSOP 47MAX | |
KM68U4000CL-L
Abstract: 3A3103
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OCR Scan |
KM68V4000C, KM68U4000C 512Kx8 512Kx8 KM68V4000C 32-SOP-S25, 32-TSDP2-400F/R 32-TSOP1-OB13 KM68U4000CL-L 3A3103 | |
7191BContextual Info: CMOS smfñ KM68V4000B, KM68U4000B Family 512Kx8 bit Low Power and Low Voltage CMOS Static RAM FEATURES GENERAL DESCRIPTION • Process Technology : 0.4 im CMOS • Organization: 512Kx8 • Power Supply Voltage KM68V4000B Family: 3.3±0.3V KM68U4000B Family : 3 0±0.3V |
OCR Scan |
KM68V4000B, KM68U4000B 512Kx8 512Kx8 KM68V4000B 32-SOP, 32-TSQP2-400F/R KM68V40008 7191B | |
Contextual Info: EDI8M32512C ^ E D I 1 ELECTRONC DGSIGN& N C 512Kx32 Static Ram 512KX32 CMOS, Low Power Static RAM Features The EDI8M32512C, a low power, high performance, 16 megabit density Static RAM organized as 512Kx32 bits, contains four 512Kx8 SRAMs. 512Kx32 bit CMOS Static |
OCR Scan |
EDI8M32512C 512Kx32 100ns EDI8M32512C, 512Kx8 EDI8M32512LP70GB EDI8M32512LP85GB | |
KM6 II
Abstract: KM684000ALP-7 KM684000A KM684000AL KM684000ALI KM684000ALI-L KM684000AL-L KM684000ALP-5 KM684000ALGI-7L A2ND
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KM684000A 512Kx8 512Kx8 32-DIP, 32-SOP, 32-TSOP 047MAX 002MIN KM6 II KM684000ALP-7 KM684000AL KM684000ALI KM684000ALI-L KM684000AL-L KM684000ALP-5 KM684000ALGI-7L A2ND | |
Contextual Info: KM684000A Family CMOS SRAM 512Kx8 bit High Speed CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.4 um CMOS • Organization : 512Kx8 • Power Supply Voltage : Single 5V +/-10% • Low Data Retention Voltage : 2V Min • Three state output and TTL Compatible |
OCR Scan |
KM684000A 512Kx8 512Kx8 32-DIP, 32-SOP, 32-TSOP KM684000AL KM684000AL-L KM6840 | |
cs 308
Abstract: KM68U4000A
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OCR Scan |
KM68U4000A 512Kx8 512Kx KM68V4000A KM68U4000A 32-SOP, 32-TSOP cs 308 | |
Contextual Info: KM68V4000A Family CMOS SRAM 512Kx8 bit Low Power & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION >Process Technology : 0.4 um CMOS The >Organization : 512K x 8 SAMSUNG'S advanced CMOS process technology. KM68V4000A family is fabricated by >Power Supply Voltage : 3.3 +/- 0.3V |
OCR Scan |
KM68V4000A 512Kx8 32-SOP, 32-TSOP KM68V4000AL KM68V4000AL-L | |
KM68V4000Contextual Info: KM68V4000A Family CMOS SRAM 512Kx8 bit Low Power & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • • • • • • The Process Technology : 0.4 um CMOS Organization : 512K x 8 Power Supply Voltage : 3.3 +/- 0.3V * Low Data Retention Voltage : 2V Min |
OCR Scan |
KM68V4000A 512Kx8 32-SOP, 32-TSOP KM68V4000A KM68V4000 | |
K6T4008V1B-VF70
Abstract: Improved MF10 32-TSOP2-R
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K6T4008V1B, K6T4008U1B 512Kx8 KM68U4000B KM68V4000B K6T4008V1B KM68U4000B K6T4008U1B K6T4008V1B-VF70 Improved MF10 32-TSOP2-R | |
Contextual Info: KM68V4000B, KM68U4000B Family CMOS SRAM Document Title 512Kx8 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Initial draft December 17th 1996 Preliminary 1.0 Finalize - Change datasheet format - Erase low power part from product |
OCR Scan |
KM68V4000B, KM68U4000B 512Kx8 | |
KM68V4000BLG-7L
Abstract: KM68V4000BLGI10L KM68V4000BL-L
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KM68V4000B, KM68U4000B 512Kx8 047MAX 002MIN KM68V4000BLG-7L KM68V4000BLGI10L KM68V4000BL-L | |
KM68V4000AL-L
Abstract: KM68U4000A lm68
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OCR Scan |
KM68V4000A, KM68U4000A 512Kx8 KM68V400QA 32-SOP-52S, 32-TSOP2-4 KM68V4000AL KM68V4000AL-L lm68 | |
VF10
Abstract: K6T4008V1B
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K6T4008V1B, K6T4008U1B 512Kx8 KM68U4000B VF10 K6T4008V1B | |
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KM684000ALG-7L
Abstract: KM684000ALT-5L km684000alg KM684000ALP-5L 32SOP KM684000ALP-5 KM684000ALP-7 KM684000ALP-7L
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OCR Scan |
KM684000A 512Kx8 32-DIP-600 32-SOP-525, 32-TSQP2-400F/R KM684Q00A KM684000ALG-7L KM684000ALT-5L km684000alg KM684000ALP-5L 32SOP KM684000ALP-5 KM684000ALP-7 KM684000ALP-7L | |
Contextual Info: WDi EDI8C8512C Electronic Designs Inc. Low Power Four Megabit SRAM Module 512Kx8 Static RAM CMOS, 0.4" Wide DIP Module Features The EDI8C8512C is a 4096K bit CMOS Static RAM based on four 128Kx8 Static RAMs mounted in a multi layered, multi-cavity ceramic substrate. This high speed |
OCR Scan |
512Kx8 EDI8C8512C EDI8C8512C 4096K 128Kx8 A0-A18 EDI8C8512C35TM EDI8C8512C45TM EDI8C8512C55TM | |
EDI8C8512C35TM
Abstract: EDI8C8512C45TM EDI8C8512C55TM
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OCR Scan |
22EDI EDI8C8512C 512Kx8 EDI8C8512C 4096K 128Kx8 323D11M EDI8C8512C35TM EDI8C8512C45TM EDI8C8512C55TM | |
K6X4008T1F
Abstract: K6X4008T1F-B K6X4008T1F-F K6X4008T1F-Q K6X4008T1F-YF70 K6X4008T1F-GB70
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K6X4008T1F 512Kx8 K6X4008T1F-F K6X4008T1F-B K6X4008T1F-Q K6X4008T1F-YF70 K6X4008T1F-GB70 | |
KM684000BLP-7
Abstract: KM684000B KM684000BL KM684000BLI KM684000BLI-L KM684000BL-L KM684000BLP-5 KM684000BLP-5L KM684000BLP-7L KM684000BLG-7L
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OCR Scan |
KM684000B 512Kx8 512Kx8 32-DIP, 32-SOP, 32-TSOP 003bS17 KM684000BLP-7 KM684000BL KM684000BLI KM684000BLI-L KM684000BL-L KM684000BLP-5 KM684000BLP-5L KM684000BLP-7L KM684000BLG-7L | |
68U4000CL-LContextual Info: Preliminary CMOS SRAM KM68V4000C. KM68U4000C Family Document T ills 512Kx8 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Initial Draft January 13, 1998 Advance 0.1 Revisied June 12, 1998 Prelim inary |
OCR Scan |
KM68V4000C. KM68U4000C 512Kx8 68U4000C 85/100ns 70/85/100ns 68U4000CL-L | |
km684000blp-7l
Abstract: km684000blp
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OCR Scan |
KM684000B 512Kx8 512Kx8 32-DIP, 32-SOP, 32-TSOP km684000blp-7l km684000blp | |
Contextual Info: CMOS SRAM KM684002B, KM684002BI 512Kx8 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 10,12,15ns Max. • Low Power Dissipation Standby (TTL) : 50mA(Max.) (CMOS) : 10mA(Max.) Operating KM684Q02B - 1 0 :210mA(Max.) KM684002B -12 : 205mA(Max.) |
OCR Scan |
KM684002B, KM684002BI 512Kx8 KM684Q02B 210mA KM684002B 205mA 200mA KM684002BJ | |
K6X4008C1F
Abstract: K6X4008C1F-GB70 K6X4008C1F-DF55 K6X4008C1F-VB55 K6X4008C1F-VF55 df70 K6X4008C1F-B K6X4008C1F-F K6X4008C1F-Q K6X4008C1F-DF70 DC
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K6X4008C1F 512Kx8 32-SOP-525 047MAX 002MIN K6X4008C1F-GB70 K6X4008C1F-DF55 K6X4008C1F-VB55 K6X4008C1F-VF55 df70 K6X4008C1F-B K6X4008C1F-F K6X4008C1F-Q K6X4008C1F-DF70 DC | |
K6X4008T1F-UF70
Abstract: K6X4008T1F-UB70 K6X4008T1F-BF70 K6X4008T1F-LF70 K6X4008T1F-UF85 K6X4008T1F-UF7 K6X4008T1F-LF55 K6X4008T1FuF70 LF551 K6X4008T1F-LB70
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K6X4008T1F 512Kx8 K6X4008T1F-F K6X4008T1F-B 047MAX 002MIN K6X4008T1F-UF70 K6X4008T1F-UB70 K6X4008T1F-BF70 K6X4008T1F-LF70 K6X4008T1F-UF85 K6X4008T1F-UF7 K6X4008T1F-LF55 K6X4008T1FuF70 LF551 K6X4008T1F-LB70 |