512KX8 BIT LOW POWER CMOS STATIC RAM Search Results

Contextual Info: KM684000A Family_ CMOS SRAM 512Kx8 bit Low Power CMOS Static RAM FEATURES GENERAL DESCRIPTION •• Process Technology : 0.4 * CMOS •• Organization : 512Kx8 •■ Power Supply Voltage : Single 5V •• 10% ■ Low Data Retention Voltage : 2V Min

KM68U4000CL-L

Abstract: 3A3103
Contextual Info: Advance KM68V4000C, KM68U4000C Family CMOS SRAM 512Kx8 bit Low Power and Low Voltage CMOS Static RAM FEATURES GENERAL DESCRIPTION • Process Technology : 0.35|jm CMOS • Organization : 512Kx8 • Power Supply Voltage KM68V4000C Family : 3.3±Q.3V KM68U4000C Family : 3.0±0.3V

7191B

Contextual Info: CMOS smfñ KM68V4000B, KM68U4000B Family 512Kx8 bit Low Power and Low Voltage CMOS Static RAM FEATURES GENERAL DESCRIPTION • Process Technology : 0.4 im CMOS • Organization: 512Kx8 • Power Supply Voltage KM68V4000B Family: 3.3±0.3V KM68U4000B Family : 3 0±0.3V

Contextual Info: EDI8M32512C ^ E D I 1 ELECTRONC DGSIGN& N C 512Kx32 Static Ram 512KX32 CMOS, Low Power Static RAM Features The EDI8M32512C, a low power, high performance, 16 megabit density Static RAM organized as 512Kx32 bits, contains four 512Kx8 SRAMs. 512Kx32 bit CMOS Static

KM6 II

Abstract: KM684000ALP-7 KM684000A KM684000AL KM684000ALI KM684000ALI-L KM684000AL-L KM684000ALP-5 KM684000ALGI-7L A2ND
Contextual Info: PRELIMINARY CMOS SRAM KM684000A Family 512Kx8 bit Low Power CMOS Static RAM FEATURES ¡Ü ¡Ü ¡Ü ¡Ü ¡Ü ¡Ü GENERAL DESCRIPTION Process Technology : 0.4§- CMOS Organization : 512Kx8 Power Supply Voltage : Single 5V ¡¾ 10% Low Data Retention Voltage : 2V Min

Contextual Info: KM684000A Family CMOS SRAM 512Kx8 bit High Speed CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.4 um CMOS • Organization : 512Kx8 • Power Supply Voltage : Single 5V +/-10% • Low Data Retention Voltage : 2V Min • Three state output and TTL Compatible

cs 308

Abstract: KM68U4000A
Contextual Info: KM68U4000A CMOS SRAM ELECTRONICS 512Kx8 bit Low Power & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.4 um CMOS • Organization : 512Kx 8 • Power Supply Voltage KM68V4000A Family : 3.3 +/- 0.3V KM68U4000A Family : 3.0 +/- 0.3V

Contextual Info: KM68V4000A Family CMOS SRAM 512Kx8 bit Low Power & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION >Process Technology : 0.4 um CMOS The >Organization : 512K x 8 SAMSUNG'S advanced CMOS process technology. KM68V4000A family is fabricated by >Power Supply Voltage : 3.3 +/- 0.3V

KM68V4000

Contextual Info: KM68V4000A Family CMOS SRAM 512Kx8 bit Low Power & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • • • • • • The Process Technology : 0.4 um CMOS Organization : 512K x 8 Power Supply Voltage : 3.3 +/- 0.3V * Low Data Retention Voltage : 2V Min

K6T4008V1B-VF70

Abstract: Improved MF10 32-TSOP2-R
Contextual Info: K6T4008V1B, K6T4008U1B Family CMOS SRAM Document Title 512Kx8 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Initial draft December 17, 1996 Preliminary 1.0 Finalize - Change datasheet format - Erase low power part from product

Contextual Info: KM68V4000B, KM68U4000B Family CMOS SRAM Document Title 512Kx8 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Initial draft December 17th 1996 Preliminary 1.0 Finalize - Change datasheet format - Erase low power part from product

KM68V4000BLG-7L

Abstract: KM68V4000BLGI10L KM68V4000BL-L
Contextual Info: KM68V4000B, KM68U4000B Family CMOS SRAM Document Title 512Kx8 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Initial draft December 17, 1996 Preliminary 1.0 Finalize - Change datasheet format - Erase low power part from product

KM68V4000AL-L

Abstract: KM68U4000A lm68
Contextual Info: KM68V4000A, KM68U4000A Family CMOS SRAM 512K x8 bit Low Power and Low Voltage CMOS Static RAM FEATURES GENERAL DESCRIPTION . Process Technology : O .V n CMOS • Organization : 512Kx8 The KM68V400QA and KM68U4000A family is fabricated by SAMSUNG'S advanced CMOS process technology. The family

VF10

Abstract: K6T4008V1B
Contextual Info: K6T4008V1B, K6T4008U1B Family CMOS SRAM Document Title 512Kx8 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Initial draft December 17, 1996 Preliminary 1.0 Finalize - Change datasheet format - Erase low power part from product

KM684000ALG-7L

Abstract: KM684000ALT-5L km684000alg KM684000ALP-5L 32SOP KM684000ALP-5 KM684000ALP-7 KM684000ALP-7L
Contextual Info: KM684000A Family CMOS SRAM 512K x8 bit Low Power CMOS Static RAM FEATURES GENERAL DESCRIPTION • Process Technology : 0.4nm CMOS • Organization: 512Kx8 • Power Supply Voltage: Single 5V±10% • Low Data Retention Voltage: 2V Min » Three state output and TTL Compatible

Contextual Info: WDi EDI8C8512C Electronic Designs Inc. Low Power Four Megabit SRAM Module 512Kx8 Static RAM CMOS, 0.4" Wide DIP Module Features The EDI8C8512C is a 4096K bit CMOS Static RAM based on four 128Kx8 Static RAMs mounted in a multi­ layered, multi-cavity ceramic substrate. This high speed

EDI8C8512C35TM

Abstract: EDI8C8512C45TM EDI8C8512C55TM
Contextual Info: 22EDI EDI8C8512C Electronic Designs Inc. • Low Power Four Megabit SRAM Module 512Kx8 Static RAM CMOS, 0.4" Wide DIP Module Features The EDI8C8512C is a 4096K bit CMOS Static RAM based on four 128Kx8 Static RAMs mounted in a multi­ layered, multi-cavity ceramic substrate. This high speed

K6X4008T1F

Abstract: K6X4008T1F-B K6X4008T1F-F K6X4008T1F-Q K6X4008T1F-YF70 K6X4008T1F-GB70
Contextual Info: Preliminary CMOS SRAM K6X4008T1F Family Document Title 512Kx8 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Initial Draft July 29, 2002 Preliminary 0.1 Revised - Added 55ns product Vcc = 3.0V~3.6V

KM684000BLP-7

Abstract: KM684000B KM684000BL KM684000BLI KM684000BLI-L KM684000BL-L KM684000BLP-5 KM684000BLP-5L KM684000BLP-7L KM684000BLG-7L
Contextual Info: Prem iìinary CMOS SRAM KM684000B Family 512Kx8 bit Low Power CMOS Static RAM FEATURES GENERAL DESCRIPTION ~ - The KM684000B family is fabricated by SAMSUNG'S advanced CMOS process technology. The family can support various operating temperature ranges and has various package types

68U4000CL-L

Contextual Info: Preliminary CMOS SRAM KM68V4000C. KM68U4000C Family Document T ills 512Kx8 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Initial Draft January 13, 1998 Advance 0.1 Revisied June 12, 1998 Prelim inary

km684000blp-7l

Abstract: km684000blp
Contextual Info: Prem ilinary KM684000B Family CMOS SRAM 512Kx8 bit Low Power CMOS Static RAM FEATURES GENERAL DESCRIPTION - The KM684000B family is fabricated by SAMSUNG'S advanced CMOS process technology. The family can support various operating temperature ranges and has various package types

Contextual Info: CMOS SRAM KM684002B, KM684002BI 512Kx8 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 10,12,15ns Max. • Low Power Dissipation Standby (TTL) : 50mA(Max.) (CMOS) : 10mA(Max.) Operating KM684Q02B - 1 0 :210mA(Max.) KM684002B -12 : 205mA(Max.)

K6X4008C1F

Abstract: K6X4008C1F-GB70 K6X4008C1F-DF55 K6X4008C1F-VB55 K6X4008C1F-VF55 df70 K6X4008C1F-B K6X4008C1F-F K6X4008C1F-Q K6X4008C1F-DF70 DC
Contextual Info: CMOS SRAM K6X4008C1F Family Document Title 512Kx8 bit Low Power full CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft July 30, 2002 Preliminary 0.1 Revised - Added Commercial Product. November 30, 2002 Preliminary 1.0

K6X4008T1F-UF70

Abstract: K6X4008T1F-UB70 K6X4008T1F-BF70 K6X4008T1F-LF70 K6X4008T1F-UF85 K6X4008T1F-UF7 K6X4008T1F-LF55 K6X4008T1FuF70 LF551 K6X4008T1F-LB70
Contextual Info: K6X4008T1F Family CMOS SRAM Document Title 512Kx8 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Initial Draft July 29, 2002 Preliminary 0.1 Revised - Added 55ns product Vcc = 3.0V~3.6V October 14, 2002