512K16 Search Results

Contextual Info: 512K16-XG4X 512Kx16 CMOS EEPROM MODULE FEATURES  Access Time of 140, 150, 200ns  Page Write Cycle Time: 10ms Max  Packaging:  Data Polling for End of Write Detection  Hardware and Software Data Protection • 68 lead, 40mm Hermetic CQFP Package 501

Contextual Info: 512K16-XXX 512KX16 SRAM / NOR FLASH MODULE SMD 5962-96901* FEATURES FLASH MEMORY FEATURES  Access Times of 35ns (SRAM) and 90ns (FLASH)  100,000 Erase/Program Cycles Minimum  Access Times of 70ns (SRAM) and 120ns (FLASH)  Sector Architecture

Contextual Info: 512K16-XXX 512KX16 SRAM / NOR FLASH MODULE SMD 5962-96901* FEATURES FLASH MEMORY FEATURES  Access Times of 35ns (SRAM) and 90ns (FLASH)  100,000 Erase/Program Cycles Minimum  Access Times of 70ns (SRAM) and 120ns (FLASH)  Sector Architecture

Contextual Info: a WHITE /MICROELECTRONICS 512K16-XXX 512Kx16SRAM /FLASH MODULE, S M D 5962-96901 FEATURES FLASH M EM ORY FEATURES • A ccess Tim es of 35ns S R A M and 90ns (FLASH) ■ 10,000 E rase/Program Cycles ■ A ccess Tim es of 70ns (SRAM) and 120ns (FLASH)

FD11O

Contextual Info: YZÀ 512K16-XXX I/WHITE / M I C R O E L E C T R O N I C S 512Kx16 SRAM/FLASH MODULE P R E L IM IN A R Y • FEATURES FLASH MEMORY FEATURES • A ccess Tim es of 35nS S R A M and 90nS (FLASH) ■ 10,000 Erase/Program Cycles ■ A ccess Tim es of 70nS (SR A M ) and 120nS (FLASH)

SD10

Abstract: SD12 SD13 SD14 SD15 WSF512K16-XXX WSF512K16-XG2X
Contextual Info: White Electronic Designs 512K16-XXX 512KX16 SRAM/FLASH MODULE, SMD 5962-96901 FEATURES Access Times of 35ns SRAM and 90ns (FLASH) TTL Compatible Inputs and Outputs Access Times of 70ns (SRAM) and 120ns (FLASH) Built-in Decoupling Caps and Multiple Ground Pins

Vitarel Microelectronics

Abstract: VMS128K8M-100 32K8 VMS128K8-100 2015 static ram static ram 2015
Contextual Info: VITAREL MICROELECTRONICS V M S 1 2 8 K 8 M -1 00 1M -B IT C M O S S TA TIC RAM 32 Pin C eram ic DIP - May 1987 D E S C R IP T IO N The VM S128K 8M -100 is a 128K module x 8 bits asynchronous, CMOS static random access memoiy on a 32 pin ceramic DIP. It's very low standby power

SF512K16

Contextual Info: WHITE / M I C R O E L E C T R O N I C S W 512K16-XXX 512Kx16 SRAM/FLASH MODULE, SMD 5962-96901 FEATURES FLASH MEMORY FEATURES • A ccess Tim es o f 35ns SRAM and 90ns (FLASH] ■ 10,000 E rase/Program Cycles ■ A ccess Tim es o f 70ns (SRAM) and 120ns (FLASH)

ARINC 629 sim

Abstract: m38510/55501 AMP ARINC-629 SIM MT72038 smd cmos 4435 CQFP 240 arinc 629 controller P2X smd CERAMIC PIN GRID ARRAY CPGA lead frame arinc 629
Contextual Info: The Microelectronic Specialists Product SHORT FORM January 2001 AEROFLEX UTMC UT69151 SµMMIT DXE • UT69151 SµMMIT™ XTE ■ UT69151 SµMMIT™ RTE ■ 1760 ■ ■ ■ ■ ■ ■ ■ ■ 84,132 84 1.0E6* Q,V 5962-92118 ■ ■ ■ ■ ■ ■ ■

Contextual Info: 512K16-XXX 512KX16 SRAM/FLASH MODULE, SMD 5962-96901 FEATURES FLASH MEMORY FEATURES  Access Times of 35ns SRAM and 90ns (FLASH)  100,000 Erase/Program Cycles  Access Times of 70ns (SRAM) and 120ns (FLASH)  Sector Architecture  Packaging

TBA 129-5

Abstract: WS512K16-XXX
Contextual Info: White Electronic Designs 512K16-XXX ADVANCED* 512Kx16 SRAM MODULE FEATURES Access Times 17, 20, 25, 35ns Data I/O Compatible with 3.3V devices MIL-STD-883 Compliant Devices Available 2V Minimum Data Retention for battery back up operation Packaging Commercial, Industrial and Military Temperature

6 pin headphone PCB Mounted 3.5mm Stereo jack

Abstract: 5 pin PCB Mounted 3.5mm Stereo jack PCB Mounted 3.5mm Stereo plug 8 pin headphone PCB Mounted 3.5mm Stereo jack jack p2 3.5mm 11 pin PCF8574T SBF1001HL jack p4 3.5mm UM9709 3.5mm jack circuit diagram
Contextual Info: USER MANUAL HSM/UM9808 SPHERIC Demo Board Version 1.0 Philips Semiconductors SPHERIC Demo Board Version 1.0 User Manual HSM/UM9808 REVISION HISTORY Version Remarks 1.0 First release Purchase of Philips I2C components conveys a license under the Philips I 2C patent to use the

Contextual Info: 512K16-XXX 512KX16 SRAM / NOR FLASH MODULE SMD 5962-96901* FEATURES FLASH MEMORY FEATURES  Access Times of 35ns (SRAM) and 90ns (FLASH)  100,000 Erase/Program Cycles Minimum  Access Times of 70ns (SRAM) and 120ns (FLASH)  Sector Architecture

AO-16

Contextual Info: a W 512K16-XG4X WHITE /MICROELECTRONICS 512Kx16 CM OS EEPROM MODULE FEATURES • ■ A ccess Tim e of 1 2 0 ,1 5 0 , 200ns ■ A u to m a tic Rage W rite O peration Packaging: ■ Page W rite Cycle Tim e: 10ms M ax • ■ D ata P olling fo r End of W rite D etection

Contextual Info: 512K16-XG4X 512Kx16 CMOS EEPROM MODULE FEATURES  Access Time of 140, 150, 200ns  Page Write Cycle Time: 10ms Max  Packaging:  Data Polling for End of Write Detection  Hardware and Software Data Protection • 68 lead, 40mm Hermetic CQFP Package 501

WE512K16-XG4X

Contextual Info: White Electronic Designs 512K16-XG4X 512Kx16 CMOS EEPROM MODULE FEATURES Access Time of 140, 150, 200ns Page Write Cycle Time: 10ms Max Packaging: Data Polling for End of Write Detection • 68 lead, 40mm Hermetic CQFP Package 501 Hardware and Software Data Protection

WE512K16-XG4X

Contextual Info: 512K16-XG4X 512Kx16 CMOS EEPROM MODULE FEATURES • Access Time of 120, 150, 200ns ■ Automatic Page Write Operation ■ Packaging: ■ Page Write Cycle Time: 10ms Max ■ Data Polling for End of Write Detection • 68 lead, 40mm Hermetic CQFP Package 501

Contextual Info: a 512K16-XXX WHITE /MICROELECTRONICS 512Kx16 SRAM/FLASH MODULE PRELIM INARY * FEATURES FLASH MEMORY FEATURES • A cce ss Tim es of 35nS SR A M and 90nS (FLASH) ■ 10,000 Erase/Program Cycles ■ A cce ss Tim es of 70nS (SR A M ) and 120nS (FLASH) ■

Contextual Info: TT 512K16-XXX M/HITE /MICROELECTRONICS 512Kx16 SRAM/FLASH MODULE, SMD 5962-96901 FEATURES FLASH M E M O R Y FEATURES • Access Tim es o f 35ns SRAM and 90ns (FLASH) ■ 10,000 Erase/Program Cycles ■ Access Tim es o f 70ns (SRAM) and 120ns (FLASH) ■ S ector A rchitecture

Contextual Info: 512K16-XXX 512KX16 SRAM/FLASH MODULE, SMD 5962-96901 FEATURES FLASH MEMORY FEATURES • Access Times of 35ns SRAM and 90ns (FLASH) ■ 10,000 Erase/Program Cycles ■ Access Times of 70ns (SRAM) and 120ns (FLASH) ■ Sector Architecture • 8 equal size sectors of 64K bytes each

WE512K16-XG4X

Contextual Info: 512K16-XG4X HI-RELIABILITY PRODUCT 512Kx16 CMOS EEPROM MODULE FEATURES • Access Time of 140, 150, 200ns ■ Automatic Page Write Operation ■ Packaging: ■ Page Write Cycle Time: 10ms Max ■ Data Polling for End of Write Detection • 68 lead, 40mm Hermetic CQFP Package 501

WE512K16-XG4X

Contextual Info: 512K16-XG4X White Electronic Designs 512Kx16 CMOS EEPROM MODULE FEATURES „ Access Time of 140, 150, 200ns „ Page Write Cycle Time: 10ms Max „ Packaging: „ Data Polling for End of Write Detection • 68 lead, 40mm Hermetic CQFP Package 501 „ Hardware and Software Data Protection

WS512K16-XXX

Contextual Info: White Electronic Designs 512K16-XXX ADVANCED* 512Kx16 SRAM MODULE FEATURES Access Times 17, 20, 25, 35ns Data I/O Compatible with 3.3V devices MIL-STD-883 Compliant Devices Available 2V Minimum Data Retention for battery back up operation Packaging Commercial, Industrial and Military Temperature

WS512K16-XXX

Abstract: TBA 129-5
Contextual Info: 512K16-XXX 512Kx16 SRAM MODULE ADVANCED* FEATURES • Access Times 17, 20, 25, 35ns ■ MIL-STD-883 Compliant Devices Available ■ Packaging •44 pin Ceramic SOJ Package 102 • 44 lead Ceramic Flatpack (Package 209) ■ Organized as two banks of 256Kx16