512 X 4 BIPOLAR PROM Search Results

82S131

Abstract: GDFP2-F16 GDIP1-T16 82S130A 82S131A
Contextual Info: Product specification Philips Semiconductors Military Bipolar Memory Products 2K-bit TTL bipolar PROM 512 x 4 82S131A DESCRIPTION FEATURES The 82S130A and 82S131A are field-programmable, which means that custom patterns are immediately available by following the

Bipolar PROM programming

Abstract: AM27S13A
Contextual Info: Am27S12/13 2,048-Bit 512 x 4 Bipolar PROM DISTINCTIVE CHARACTERISTICS • • High speed Highly reliable,ultra-fast programming Platinum-Silickle fuses • High programming yield • Low-current PNP inputs • High-current open-coilector and three-state outputs

AM27S13

Abstract: 512 x 4 bipolar prom am27s13adc
Contextual Info: Am27Sl2/13 Am27S12/13 2,048-Bit 512 x 4 Bipolar PROM DISTINCTIVE CHARACTERISTICS • • • High speed Highly reliable, ultra-fast programming Platinum-Silicide fuses High programming yield • • • Low-current PNP inputs High-current open-collector and three-state outputs

AM27S13A

Abstract: AM27S13 512 ttl prom
Contextual Info: Am 27S12/13 2,048-Bit 512 x 4 Bipolar PROM • • • High speed Highly reliable, ultra-fast programming Platmum-SilickJe fuses High programming yield • • Low-current PNP inputs High-current open-collector and three-state outputs • Fast chip select

Contextual Info: Am27Sl2/13 a 2,048-Bit 512 x 4 Bipolar PROM > 3 DISTINCTIVE CHARACTERISTICS ro •«j • • • High speed Highly reliable, ultra-fast programming Platinum-Silicide fuses High programming yield • • • Low-current PNP inputs High-current open-collector and three-state outputs

mm5213

Abstract: MM5231 MM4203Q MM5203Q MM5203 MM523 J24CQ TTL dm7400
Contextual Info: MM4203/MM5203 MOS EPROMs National Semiconductor MM4203/MM5203 2048-Bit 256 x 8 or 512 x 4 UV Erasable PROM General Description The M M 420 3 /M M 5 2 03 is a 204 8 -b it static read­ o n ly m em ory w hich is e lectrically programmable and uses silicon gate technology to achieve bipolar

MM5204Q

Abstract: MM5204Q-1 description of power saver block diagram electric power saver circuits power saver circuits J24CQ power saver ac MM5204 MM5204-1
Contextual Info: MM5204-1 National Semiconductor MOS EPROMs MM5204-14096-Bit 512 x 8 UV Erasable PROM General Description Th e MM5204-1 is a 4 096-bit static Read O n ly M emory w hich is e le ctrically programmable and uses silicon gate technology to achieve bipolar co m p atib ility. T h e device

N82S141F

Abstract: 82s141 82S140 N82S140 N82S140F N82S141 S82S140 S82S141 SIGNETICS prom ttl 512 82S141/8708+prom
Contextual Info: Signetics Memories - Bipolar Proms N82S140, N82S141 - 4 0 9 6 Bit Field Programmable Prom 512 x 8 C O N N E C T IO N D IA G R A M 13 G E N E R A L D E SC R IPTIO N The 82S 140 and 82S141 are fie ld program m able. The standard 82S140 and 82S141 are supplied w ith all outputs

82S141/8708+prom

Contextual Info: Philips Semiconductors Military Bipolar Memory Products Product specification 4K-bit TTL bipolar PROM 512 x 8 82S141 FEATURES • Microprogramming • Address access time: 90ns max • Hardwired algorithms • Input loading: -150jiA max • Control store

8 bit ttl mux

Abstract: SIGNETICS prom ttl 512
Contextual Info: Signetics 82S147 82S147A 4K-Bit TTL Bipolar PROM Military Bipolar Memory Products Product Specification DESCRIPTION FEATURES APPLICATIONS Th e 8 2 S 1 4 7 and 8 2 S 1 4 7 A are field-pro­ • Address access time: 75ns max • Prototyping/volume production

SIGNETICS 82S141

Abstract: SIGNETICS prom ttl 512 IC TTL 4700 82S141/BJA 82S141
Contextual Info: Signetics 82S141 4K-Bit TTL Bipolar PROM Military Bipolar Memory Products Product Specification DESCRIPTION FEATURES APPLICATIONS The 82S141 is field programmable, which means that custom patterns are immediately available by following the Signetics Generic I fusing procedure. The

AS-016

Abstract: 82S147 82S147A f0035 AS016 33-OS
Contextual Info: Product specification Philips Semiconductors Military Bipolar Memory Products 4K-bit TTL bipolar PROM 512 x 8 82SH7A FEATURES DESCRIPTION • Address access time: 75ns max The 82S147 and 82S147A are field-programmable, which means that custom patterns are immediately available by following the

82s141

Abstract: GDFP2-F24 82S141/BJA 1000U 82S141 philips ue-12
Contextual Info: P hilips Sem iconductors M ilitary B ipo la r Memory P roducts P roduct sp ecifica tio n 4K-bit TTL bipolar PROM 512 x 8 82S141 FEATURES • Microprogramming • Address access time: 90ns max • Hardwired algorithms • Input loading: -150|iA max • Control store

82s141

Abstract: 512 ttl prom 1000U GDIP1-T24 82S141 philips 82S141/BJA
Contextual Info: P hilips Sem iconductors M ilitary B ipo la r Memory P roducts P roduct sp ecifica tio n 4K-bit TTL bipolar PROM 512 x 8 82S141 FEATURES • Microprogramming • Address access time: 90ns max • Hardwired algorithms • Input loading: -150|iA max • Control store

82s131 programming

Abstract: rom 512x4 512 x 4 PROM SIGNETICS* fusing procedure 512x4 2041b 82S131 825131 82s130 programming 82S130
Contextual Info: B g g n o ticB 2041-BIT BIPOLAR PROGRAMMABLE ROM 512x4 PROM FEBRUARY 1975 825130 825131 DIGITAL 8000 SERIES TTL/M EM ORY D E S C R IP T IO N The 82S130 (Open Collector Outputs) and the 82S131 (Tri-State Outputs) are Bipolar 2048-Bit Read O nly Mem­ ories, organized as 512 words by 4 bits per word. They

N82S115N

Abstract: strobe
Contextual Info: Philips Components-Signetics Document No. 853-0106 ECN No. 86487 Date of Issue November 11, 1986 Status Product Specification 82S115 4K-bit TTL bipolar PROM Memory Products DESCRIPTION FEATURES The 82S115 is field programmable and includes on-chip decoding and 2 chip

N82S147N

Abstract: SIGNETICS prom N82S147 512 PROM 82s
Contextual Info: S ign etics Memories - Bipolar Prom 512 x 8 C O N N E C T IO N D IA G R A M N82S146, N82S147 - 4096 Bit Bipolar Prom (512 x 8) G E N E R A L D E S C R IP TIO N T he 82S 146 and 82S147 are fie ld program m able. The standard devices are supplied w ith all o u tp u ts at logical

512 PROM 82s

Abstract: prom 82s
Contextual Info: Philips Components-Signetics ECN No. 9 6054 Date of Issue M arch 14, 1989 825130 825131 Status P roduct S p ecification 2K-bit TTL bipolar PROM Document No. 8 5 3 -0 1 4 3 M em ory Products PIN CONFIGURATIONS DESCRIPTION FEATURES The 82S 130 and B2S131 are fie ld

Contextual Info: WS57C51C MILITARY HIGH SPEED 16Kx 8 CMOS PROM/RPROM KEY FEATURES • Pin Compatible with Am27S51 and N82HS1281 • Ultra-Fast Access Time — 45 ns • Immune to Latch-Up • Low Power Consumption • Fast Programming — Up to 200 mA • ESD Protection Exceeds 2000 V

bipolar PROM

Abstract: plhs18p8 S4LS04 82HS641 PLHS18 54175 82s137a 82S191 68172 54F04
Contextual Info: Signetics I Alphanumeric I Index Military Products H LM119 LM124 LM139 Vol. 1 17 Dual Voltage Comparator Vol.2 22 26 26 Low Power Quad Op Amp LM139A Qual Voltage Comparator Qual Voltage Comparator PLC18V8Z Zero Standby Power Universal PAL -Type Device PLC415

Contextual Info: WS57C51C MILITARY HIGH SPEED 16Kx 8 CMOS PROM/RPROM KEY FEATURES • Ultra-Fast Access Time • Pin Compatible with Am27S51 and N82HS1281 — 45 ns • Low Power Consumption • Fast Programming • Immune to Latch-Up — UPt0 200 mA • ESD Protection Exceeds 2000 V

AM27lS08

Abstract: XB102 1024X4 AM27S30
Contextual Info: Bipolar PROM Bipolar PROM Functional Index and Selection Guide Part Number Access Time Icc COM'L/MIL COM'L/MIL Organization Max Max Output Number of Pins Packages 80/80 oc 16 D.P.F.L d ,p , f ,l AIH27LS181 32x8 A m 27LSl91 32x8 50/65 80/80 3S 16 Am 27Sl8 32x8

X 1077 CE

Contextual Info: P hilips Sem iconductors M ilitary B ipo la r Memory P roducts P roduct sp ecifica tio n 4K-bit TTL bipolar PROM 512 x 8 82S141 FEATURES • Microprogramming • Address access time: 90ns max • Hardwired algorithms • Input loading: -150|iA max • Control store

S5NS

Abstract: prom 82S147 82S147 82S147A 512 ttl prom
Contextual Info: Product •pacification Philips Semiconductors Military Bipolar Memory Products OOS1A7 82S147A 4K-bit TTL bipolar PROM 5 1 2 x 8 DESCRIPTION FEATURES The 82S147 and 82S147A are field-programmable, which means that custom patterns are immediately available by following the