5116400 Search Results

WCs MARKING

Abstract: SMD MARKING code ASC SMD MARKING CODE RAC 5117400
Contextual Info: 4M x 4-Bit Dynamic RAM 2k & 4k Refresh Fast Page Mode HYB 5116400BJ-50/-60 HYB 5117400BJ-50/-60 HYB 3116400BJ/BT-50/-60 HYB 3117400BJ-50/-60 Advanced Information • 4 194 304 words by 4-bit organization • 0 to 70 °C operating temperature • Fast Page Mode operation

Contextual Info: 5116400 Series Product Preview 4,194,304-Word x 4-Bit Dynamic Random Access Memory • DESCRIPTION 5116400J Series The Hitachi HM 5116400 is a C M O S dynamic R A M organized 4,194,304 words x 4 bits. It employs the most advanced C M O S technology for high performance and

Contextual Info: HB56A840BR Series 8 ,3 8 8 ,6 0 8 -w o rd x 4 0 -b it H ig h D e n s ity D y n a m ic R A M M o d u le The HB56A840BR is a 8 M x 40 dynamic RAM module, mounted 20 pieces of 16-Mbit DRAM H M 5116400AS sealed in SOJ package. An outline of the HB56A840BR is 72-pin single in­

Contextual Info: S IE M E N S 4M X 4-Bit Dynamic RAM HYB 5116400BJ -50/-60/-70 Advanced Information • 4 194 304 words by 4-bit organization • 0 to 70 ”C operating temperature • Performance: -50 -60 -70 ÍRAC R A S access time 50 60 70 *CAC C A S access time 13 15 20

A10q

Abstract: HM5116400Z-6 ice power 200 asc HM5116400Z HM5116400TT-7 CSR BLE HM5116400Z8
Contextual Info: blE D • HMTbSGB DD23 351 E7M ■ H I T 2 H M 511 6 4 0 0 S e r i e s - HITACHI/ LOGIC/ARRAYS/MEM 4,194,304-w ord x 4-bit D ynam ic R andom A c c e s s Memory The H itachi H M 5116400 is a CMOS dynamic RAM organized 4,194,304 w ords x 4 bits. It employs the most advanced CMOS technology for

Contextual Info: SIEMENS 4M X 4-Bit D yn am ic RAM H YB 5116400J-50/-60/-70/-80 Advanced Inform ation • 4 194 304 words by 4-bit organization • 0 to 70 "C operating temperature • Fast access and cycle time RAS access time: 50 ns -50 version 60 ns (-60 version) 70 ns (-70 v e rs io n )

Contextual Info: O K I Semiconductor MSM5 1 16400_ 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE D ESCRIPTIO N The M SM 5116400 is a new generation dynam ic organized as 4,194,304-w ord x 4-bit. The technology used to fabricate the M SM 5116400 is O K I's C M O S silicon gate process technology.

Contextual Info: 5116400 Series HM5117400 Series 4,194,304-word x 4-bit Dynamic RAM HITACHI ADE-203-648D Z Rev. 4.0 Jun. 12, 1997 Description The Hitachi H M 5116400 Series, H M 5117400 Series are CMOS dynamic RAMs organized 4,194,304-word X 4-bit. They employ the m ost advanced 0.5 |Jm CMOS technology for high performance and low power.

M5116400

Contextual Info: H M 5116400 S e rie s Product Preview 4,194,304-Word x 4-Bit Dynamic Random A c c e s s Memory • DESCRIPTION The Hitachi H M 5116400 is a C M O S dynamic R A M organized 4,194,304 words x 4 bits. It employs the most advanced C M O S technology for high performance and

D0241

Abstract: MSM5116400
Contextual Info: O K I Semiconductor MSC23837-XXBS18/DS18 8,388,608-Word by 36-Bit DRAM Module: Fast Page Mode DESCRIPTION The OKI M SC23837-xxBS18/D S18 is a fully decoded 8,388,608-w ord x 36-bit CMOS Dynam ic Random Access M em ory M odule com posed of eighteen 16-Mb DRAMs in SOJ M SM 5116400 packages m ounted

5116400AJ

Contextual Info: SIEMENS 4M X 4-Bit Dynamic RAM HYB 5116400AJ-50/-60/-70/-80 HYB 5116400ASJ-50/-60/-70/-80 Advanced Inform ation • • • • • • • • • • • • 4 194 304 w ords by 4-bit organization 0 to 70 "C operating temperature Fast access and cycle time

k2624

Abstract: D-50 D-60 MSM5116400 MSM5116400D MSM5116400D-50 MSM5116400D-60 MSM5116400D-70
Contextual Info: 作成 ：1999 年 5 月 電子デバイス M SM 5116400D 4,194,304-Word x 4-Bit DYNAMIC RAM : 高 速 ペ ー ジ モ ー ド • 概要 5116400D はCMOS プロセス技術を用いた 4,194,304 ワードx4 ビット構成のダイナミックラ

bt60

Abstract: siemens im 304 Q1050
Contextual Info: SIEMENS 4M X 4-Bit Dynamic RAM HYB 5116400BJ -50/-60/-70 HYB 5116400BT -50/-60/-70 Advanced Inform ation • 4 194 304 words by 4-bit organization • 0 to 70 C operating tem perature • Fast access and cycle time RAS access time: 50 ns -50 version 60 ns (-60 version)

BUT25

Contextual Info: 5116400L Series lowPower Version Product Preview 4,194,304-Word x 4-Bit Dynamic Random A c ce ss Memory • DESCRIPTION H M 5116400LJ Series The Hitachi HM 5116400 is a C M O S dynamic RAM organized 4,194,304 words x 4 bits. It employs the most advanced C M O S technology for high performance and

Contextual Info: SIEM EN S 4 M X 4-Bit Dynamic RAM HYB 5116400AJ-50/-60/-70/-80 HYB 5116400ASJ-50/-60/-70/-80 Advanced Information • • • • • • • • • • • • 4 194 304 words by 4-bit organization 0 to 70 "C operating temperature Fast access and cycle time

Contextual Info: SIEMENS 4 M X 4-Bit Dynamic RAM HYB 5116400AJ-50/-60/-70/-80 HYB 5116400ASJ-50/-60/-70/-80 Advanced Inform ation • 4 194 304 words by 4-bit organization • 0 to 70 ’C operating temperature • Fast access and cycle time RAS access time: 50 ns -50 version

Contextual Info: SIEM ENS 4M X 4-Bit Dynamic RAM HYB 5116400BJ -50/-60/-70 HYB 5116400BT -50/-60/-70 Advanced Inform ation • • • • • 4 194 304 w ords by 4-bit organization 0 to 70 'C operating tem perature Fast access and cycle time RAS access time: 50 ns -50 version

Contextual Info: 5116400 Series HM5117400 Series 4,194,304-word x 4-bit Dynamic RAM HITACHI ADE-203-648C Z Rev. 3.0 Feb. 27, 1997 Description The Hitachi HM 5116400 Series, HM 5117400 Series are CMOS dynamic RAMs organized 4,194,304-word x 4-bit. They employ the most advanced 0.5 (J.m CMOS technology for high performance and low power.

MSM5116400

Abstract: MSM5116400A
Contextual Info: O K I Semiconductor 5116400A_ 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The M SM 5116400A is a 4,194,304-word x 4-bit dynam ic R A M fabricated in O K I's C M O S silicon gate technology. The 5116400A achieves high integration, high-speed operation, and low-power

Q67100-Q1049

Abstract: Q67100-Q1050 Q67100-Q1051
Contextual Info: 4M x 4-Bit Dynamic RAM HYB 5116400BJ -50/-60/-70 Advanced Information • • • • • • • • • • • 4 194 304 words by 4-bit organization 0 to 70 ˚C operating temperature Performance: -50 -60 -70 tRAC RAS access time 50 60 70 ns tCAC CAS access time

Contextual Info: •HYUNDAI HY5117400B ,H Y 5116400B 4Mx4, Fast Page mode DESCRIPTION This fam ily is a 16M bit dynam ic RAM organized 4,194,304 x 4 -bit configuration w ith Fast Page mode CMOS DRAMs. Fast Page mode is a kind of page mode which is useful for the read operation. The circuit and process design allow this

MSM5116400

Abstract: ms51164
Contextual Info: O K I Sem iconductor MSM 5 1 1 6 4 0 0 _ 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The M SM 5116400 is a new generation dynam ic organized as 4,194,304-w ord x 4-bit. The technology u sed to fabricate the M SM 5116400 is OKI's C M O S silicon gate process technology.

Contextual Info: 5116400L Series Product Preview Low Power Version 4,194,304-Word x 4-Bit Dynamic Random A c c e s s Memory • DESCRIPTION HM 5116400LJ Series The Hitachi HM 5116400 is a C M O S dynamic RAM organized 4,194,304 words x 4 bits. It employs the most advanced C M O S technology for high performance and

HA53

Abstract: MSM5116400 EA-55
Contextual Info: O K I Semiconductor MSC23833-XXBS16/DS16 8,388,608-Word by 32-Bit DRAM Module: Fast Page Mode D ESC R IPTIO N The OKI M SC 23833-xxBS16/D S16 is a fully decoded 8,388,608-word x 32-bit CM OS Dynamic Random Access Memory Module composed of sixteen 16-Mb DRAM s in SOJ M SM 5116400 packages mounted