B72454D Search Results
B72454D Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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"Bit Shift Register"
Abstract: MSM5839C MSM5839CGS-2K MSM5839CGS-K MSM5839CGS-L2
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msm5839c40-dqt40-bit20-bit+4 | |
MSM514400C/CL-60Contextual Info: O K I Semiconductor MSM514400C/CL_ 1,048,576-W ord x 4-Bit D Y N A M IC R A M : FA ST P A G E M O D E T Y P E DESCRIPTION The MSM514400C/CL is a 1,048,576-word x 4-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM514400C/CL achieves high integration, high-speed operation, and lowpower consumption due to quadruple polysilicon single metal CMOS. The MSM514400C/CL is |
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msm514400c/cl_msm514400c/cl576-word26/20-pin+4 | |
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Contextual Info: E2D0017-27-42 O K I Semiconductor M S M 6652/53/54/55/56-xxx, M SM 6652A/53A/ 54A/55A/56A/58A-xxx, MSM66P54-XX, MSM66P56-xx Under development , MSM6650 Internal Mask ROM Voice Synthesis 1C, Internal One-Time-Programmable (OTP) ROM Voice Synthesis 1C, External ROM Drive Voice Synthesis 1C |
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e2d0017-27-426652/53/54/55/56-xxx652a/53a/4a/55a/56a/58a-xxx+5 | |
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Contextual Info: O K I Semiconductor MSM5 1 16400_ 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE D ESCRIPTIO N The M SM 5116400 is a new generation dynam ic organized as 4,194,304-w ord x 4-bit. The technology used to fabricate the M SM 5116400 is O K I's C M O S silicon gate process technology. |
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msm5116400304-word304-wcycles/64ms+1 | |
21424G
Abstract: voice recognition processor MSM6679 block diagram of speech recognition processor c2165 circuit diagram of voice recognition cut template DRAWING MSM6679-XXXJS ad338
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msm6679msm6679-xxxjsb72m24021424g+6 | |
4424 ym
Abstract: oki voice synthesizer msm6375 tba 2929 07FFD 20191 MSM505 MSM6376 KF-38S4 MSM6374-006 MSM6373-329
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msm6375/4/3/2-xxx1m-bit/512k-bit/256k-bit/128k-bitmsm637512-bit+13 | |
65P524
Abstract: SFT 352 0040H MSM65524 MSM65P524 TI OAE
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b72424d13tb7msm65524/65p524msm65524+8 | |
FST 460 transistor
Abstract: 80c85 UTM RESISTOR 210-9 sc2305 Transistor FST 461 QFP44-P-910-V1K Transistor FST 460 MSM6258
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ism6258/msm6258v6388/m12-bitmsm6258+12 | |
MSM51V16100Contextual Info: O K I Semiconductor MSM5 1 V16100 _ 16,777,216-W ord x 1 -B it DYN AM IC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V16100 is a new generation dynamic organized as 16,777,216-word x 1-bit. The technology used to fabricate the MSM51V16100 is OKI's CMOS silicon gate process technology. |
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msm51v16100_216-wordmsm51v16100cycles/64ms+2 | |
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Contextual Info: O K I Semiconductor MSM56V16400 2-Bank x 2,097,152-Word x 4-Bit SYNCHRONOUS DYNAMIC RAM DESCRIPTION The MSM56V16400 is a 2-bank x 2,097,152-word x 4-bit synchronous dynamic RAM, fabricated in OKI's CMOS silicon gate process technology. The device operates at 3.3 V. The inputs and |
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msm56v16400152-wordcycles/64dd2d377 | |
ZIP40-P-475Contextual Info: O K I Semiconductor MSM5 14170 A/ASL 262,144-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM514170A/ASL is a 262,144-word x 16-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM514170A/ASLachieves high integration, high-speed operation, and lowpower consumption due to quadruple polysilicon single metal CMOS. The MSM514170A/ASL is |
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msm514170a/asl144-word16-bitmsm514170a/aslachieves+2 | |
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Contextual Info: O K I Semiconductor MSM56 V16160 2-Bank x 524,288-Word x 16-Bit SYNCHRONOUS DYNAMIC RAM DESCRIPTION The MSM56V16160 is a 2-bank x 524,288-word x 16-bit synchronous Dynamic RAM, fabricated in OKI's CMOS silicon gate process technology. The device operates at 3.3 V, and the inputs and outputs are LVTTL Compatible. |
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msm56v16160288-word16-bit+2 | |
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Contextual Info: O K I Semiconductor MSM51V17160 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V17160 is a new generation Dynamic RAM organized as 1,048,576-word x 16-bit configuration. The technology used to fabricate the MSM51V17160 isOKI's CMOS silicon gate process technology. |
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msm51v17160576-word16-bit2048cycles/32ms | |
D771
Abstract: t7so
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msm514800_288-wordmsm51480028-pin+5 | |
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A18E
Abstract: 42-PIN 44-PIN 48-PIN a18e 40
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msm531642d_16-bitmsm531642d16mbit+9 | |
MSM5116400
Abstract: ms51164
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msm5116400_304-wordmsm5116400cycles/64ms+2 | |
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Contextual Info: O K I Semiconductor M S M 5 6 V 1 6 8 0 0 2-Bank x 1,048,576-Word x 8-Bit SYNCHRONOUS DYNAMIC RAM DESCRIPTION The MSM56V16800 is a 2-bankx 1,048,576-word x 8-bit synchronous Dynamic RAM, fabricated in OKI's CMOS silicon gate process technology. The device operates at 3.3 V, and the inputs and outputs are LVTTL Compatible. |
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576-wordmsm56v16800576-wcycles/64+1 | |
S82VContextual Info: E2L0056-28-91 O K I S em iconductor M S82V16 5 2 0 262,144-Word x 32-Bit x 2 -B a n k Synch ro nous G raph ics R A M D E S C R IP T IO N The MS82V16520 is a synchronous graphics random access memory organized as 256 K w ords x 32 bits x 2 banks. This device can operate up to 166 MHz by using synchronous interface. In addition, it has 8-column |
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e2l0056-28-91s82v16144-word32-bit+4 | |
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Contextual Info: O K I Semiconductor MSM7586-01 71/4 Shift Q P SK M O D EM /A D PCM C O D EC G E N E R A L D E S C R IP T IO N The MSM7586 is a CMOS IC developed for use with digital cordless telephones. The device provides a 7t/4 shift QPSK modem function and a CODEC function which performs transcoding |
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msm7586-01msm7586b72424d002104b | |
QFP44-P-910-V1K
Abstract: VOICE RECORDER circuits VOICE RECORDER playback system 80C154 msm6388 ST M240 MSM6389 MSM6586 MSM6587 QFP44-P910-V1K
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msm638812bit-40db/octmsm6389+10 | |
ST chn 624
Abstract: chn 712 LSPM2 CHN 618 chn 631 chn 648 equivalent CHN 602 CHN 612 h724 MSM6588
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msm6588msm63880dlbfl45096mhz+10 | |