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    50N06LT Search Results

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    onsemi FQI50N06LTU

    MOSFET N-CH 60V 52.4A I2PAK
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    DigiKey FQI50N06LTU Tube 1,000
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    onsemi FQB50N06LTM

    MOSFET N-CH 60V 52.4A D2PAK
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    DigiKey () FQB50N06LTM Reel
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    FQB50N06LTM Cut Tape
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    FQB50N06LTM Digi-Reel 1
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    Newark FQB50N06LTM Reel 800
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    Flip Electronics FQB50N06LTM 19,200
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    Rochester Electronics LLC FQI50N06LTU

    MOSFET N-CH 60V 52.4A I2PAK
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    DigiKey FQI50N06LTU Tube 224
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    Fairchild Semiconductor Corporation FQI50N06LTU

    Power Field-Effect Transistor, 52.4A I(D), 60V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
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    Rochester Electronics FQI50N06LTU 1,730 1
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    Fairchild Semiconductor Corporation FQB50N06LTM

    Transistors
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    Vyrian FQB50N06LTM 1,068
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    Win Source Electronics FQB50N06LTM 330
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    50N06LT Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    50N60

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 50N06 Power MOSFET 50 Amps, 60 Volts N-CHANNEL POWER MOSFET 1 1  DESCRIPTION TO-263 The UTC 50N06 is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max


    Original     		50N06 O-263 50N06 O-220 O-251 O-220F QW-R502-088 50N60 PDF

    mosfet 50a 25v to 252

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 50N06 Power MOSFET 50 Amps, 60 Volts N-CHANNEL POWER MOSFET 1 TO-263  DESCRIPTION The UTC 50N06 is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max


    Original     		50N06 O-263 50N06 O-251 O-220 O-220F QW-R502-088 mosfet 50a 25v to 252 PDF

    50N06 to 252

    Abstract: MOSFET 50N06 50n06l 50N06 50N06 E 50N60L-TM3-T 50n06 to-252 50N06L-TF3-T 50N60G-TM3-T power MOSFET 50n06
    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 50N06 Power MOSFET 50 Amps, 60 Volts N-CHANNEL POWER MOSFET 1 „ DESCRIPTION The UTC 50N06 is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max


    Original     		50N06 O-252 50N06 O-251 O-220 O-220F QW-R502-088 50N06 to 252 MOSFET 50N06 50n06l 50N06 E 50N60L-TM3-T 50n06 to-252 50N06L-TF3-T 50N60G-TM3-T power MOSFET 50n06 PDF

    50n06

    Abstract: MOSFET 50N06 50N06 to 252
    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 50N06 Power MOSFET 50 Amps, 60 Volts N-CHANNEL POWER MOSFET 1 1  DESCRIPTION TO-263 The UTC 50N06 is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max


    Original     		50N06 O-263 50N06 O-220 O-220F O-220F3 O-251 O-252 O-252D QW-R502-088 MOSFET 50N06 50N06 to 252 PDF

    50n06

    Abstract: MOSFET 50N06 Equivalent 50N06 50N06 DATASHEET p 50n06 power MOSFET 50n06 50N06-TF3-T 50N06LT TO-220 50n06 25V 1A power MOSFET TO-220
    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 50N06 Power MOSFET 50 Amps, 60 Volts N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 50N06 is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max


    Original     		50N06 50N06 50N06L QW-R502-088 MOSFET 50N06 Equivalent 50N06 50N06 DATASHEET p 50n06 power MOSFET 50n06 50N06-TF3-T 50N06LT TO-220 50n06 25V 1A power MOSFET TO-220 PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 50N06-F Preliminary Power MOSFET 50 Amps, 60 Volts N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 50N06-F is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max


    Original     		50N06-F 50N06-F 50N06L-TN3-R 50N06G-TNat QW-R502-A83 PDF

    a50n06

    Abstract: 50n06 MOSFET 50N06 50N06LT Equivalent 50N06 50N06 DATASHEET 50N06L power MOSFET 50n06 50N06-TF3-T p 50n06
    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 50N06 MOSFET 50 Amps, 60 Volts N-CHANNEL POWER MOSFET 1 DESCRIPTION TO-220 The UTC 50N06 is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max


    Original     		50N06 O-220 50N06 O-220F 50N06L QW-R502-088 a50n06 MOSFET 50N06 50N06LT Equivalent 50N06 50N06 DATASHEET 50N06L power MOSFET 50n06 50N06-TF3-T p 50n06 PDF

    Equivalent 50N06

    Abstract: MOSFET 50N06 50n06 TO-252 50n06 50N06L 60V 2A MOSFET N-channel 50N06LT 50N06 DATASHEET mosfet driver L038
    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 50N06 Power MOSFET 50 Amps, 60 Volts N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 50N06 is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max


    Original     		50N06 50N06 QW-R502-088 Equivalent 50N06 MOSFET 50N06 TO-252 50n06 50N06L 60V 2A MOSFET N-channel 50N06LT 50N06 DATASHEET mosfet driver L038 PDF