A50N06 Search Results
A50N06 Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
HSBA50N06
|
Huashuo Semiconductor | N-channel 60V MOSFET with 50A continuous drain current, 12mΩ typical RDS(ON), low gate charge, and high cell density trench technology for fast switching applications. | Original |