50A 30V MOSFET Search Results

mdd1653

Abstract: mdd1653 MOSFET MagnaChip Semiconductor Ltd. MDD1653 MDD*1653 50a 30v 8.5m MOSFET MDD1653R 30V 20A power p MOSFET MagnaChip Semiconductor Ltd. MDD1653 rg MDD1653T MAGNACHIP
Contextual Info: 30V N-channel Trench MOSFET : 30V, 50A, 8.5mΩ Features General Description VDS = 30V ID = 50A @VGS = 10V RDS ON < 8.5mΩ @VGS = 10V < 14.0mΩ @VGS = 4.5V The MDD1653 uses advanced Magnachip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching

MDD1653

Abstract: MDD*1653 mdd1653 MOSFET MDD1653rh MDD1653RP MagnaChip Semiconductor Ltd. MDD1653 MagnaChip Semiconductor Ltd. MDD1653 rg 1E52 MDD165 MDD1653R
Contextual Info: Single N-channel Trench MOSFET 30V, 50A, 8.5mΩ General Description Features VDS = 30V ID = 50A @VGS = 10V RDS ON < 8.5mΩ @VGS = 10V < 14.0mΩ @VGS = 4.5V The MDD1653 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state

09N03

Abstract: MEN09N03 MEN09N03BJ3 i 09N03 C430J3 09n0
Contextual Info: CYStech Electronics Corp. Spec. No. : C430J3 Issued Date : 2008.10.20 Revised Date :2009.02.04 Page No. : 1/7 N-Channel Logic Level Enhancement Mode Power MOSFET MEN09N03BJ3 BVDSS 30V ID 50A RDSON 9mΩ Features • VDS=30V, ID=50A, RDS ON =9mΩ • Low Gate Charge

fs50smh-03

Contextual Info: MITSUBISHI Neh POWER MOSFET FS50SMH-03 HIGH-SPEED SWITCHING USE FS50SMH-03 • 2.5V DRIVE • V dss . 30V .22mQ • ID . 50A

Contextual Info: Preliminary – Subject to change without notice 30V N-Channel Trench MOSFET 30V, 50A, 6.5mΩ General Description Features The MDD1654 uses advanced Magnachip’s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality.

Contextual Info: AON7428 30V N-Channel MOSFET General Description Product Summary The AON7428 uses advanced trench technology to provide excellent RDS ON with low gate charge. This device is ideal for load switch and battery protection applications. ID (at VGS=10V) 30V 50A

Contextual Info: AON7428 30V N-Channel MOSFET General Description Product Summary The AON7428 uses advanced trench technology to provide excellent RDS ON with low gate charge. This device is ideal for load switch and battery protection applications. VDS 30V 50A ID (at VGS=10V)

AON7405

Abstract: 30V 20A power p MOSFET
Contextual Info: AON7405 30V P-Channel MOSFET General Description Product Summary The AON7405 uses advanced trench technology to provide excellent RDS ON with low gate charge. This device is ideal for load switch and battery protection applications. VDS -30V -50A ID (at VGS= -10V)

742 mosfet

Contextual Info: M ITSUBISHI Neh POW ER M OSFET FS50AS-03 HIGH-SPEED SW ITCHING USE FS50AS-03 • 10V DRIVE • V D S S .30V • ros ON (MAX) . 23mi2 • Id . 50A

n308ad

Abstract: ISL9N308AD3ST N-308 35KP ISL9N308AD3
Contextual Info: PWM Optimized ISL9N308AD3 / ISL9N308AD3ST N-Channel Logic Level UltraFET Trench Power MOSFETs 30V, 50A, 8mΩ General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance.

FS50A

Contextual Info: MITSUBISHI Nch POWER MOSFET ! FS50ASJ-03 | HIGH-SPEED SWITCHING USE FS50ASJ-03 • 4V D R IV E • VDSS . .30V • rDS ON (MAX) • •■• ■19mi2 .50A • Id . • Integrated Fast Recovery Diode (TYP.)

n306ad

Abstract: N306A ISL9N306AD3
Contextual Info: ISL9N306AD3 / ISL9N306AD3ST N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs 30V, 50A, 6mΩ General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance.

n306ad

Abstract: N306A
Contextual Info: PWM Optimized ISL9N306AD3ST/ ISL9N306AD3 N-Channel Logic Level UltraFET Trench Power MOSFETs 30V, 50A, 6mΩ General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance.

n308ad

Abstract: N-308
Contextual Info: PWM Optimized ISL9N308AD3ST/ ISL9N308AD3 N-Channel Logic Level UltraFET Trench Power MOSFETs 30V, 50A, 8mΩ General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance.

n312ad

Contextual Info: PWM Optimized ISL9N312AD3ST/ ISL9N312AD3 N-Channel Logic Level UltraFET Trench Power MOSFETs 30V, 50A, 12mΩ General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance.

Contextual Info: MITSUBISHI Neh POWER MOSFET FS50SM-03 HIGH-SPEED SWITCHING USE FS50SM-03 OUTLINE DRAWING Dimensions in mm .4.5. 15.9MAX 1.5 { 3.2 £ 5.45 0.6 oi 10V DRIVE V d s s . 30V rDS ON (MAX). 23mi2 I d . 50A

Contextual Info: MITSUBISHI Neh POWER MOSFET FS50AS-03 HIGH-SPEED SWITCHING USE FS50AS-03 ' 10V DRIVE ' V d s s . ' rDS ON (MAX) . ' Id . ' Integrated Fast Recovery Diode (TYP.) .30V . 23mi2 .50A 60ns APPLICATION M otor control, Lamp control, Solenoid control

N-308A

Abstract: TO-252 MOSFET
Contextual Info: PWM Optimized ISL9N308AD3ST N-Channel Logic Level UltraFET Trench MOSFET 30V, 50A, 8mΩ General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching

N-308

Abstract: n308ad *n308ad
Contextual Info: PWM Optimized ISL9N308AD3ST N-Channel Logic Level UltraFET Trench MOSFET 30V, 50A, 8mΩ General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching

G2U4407

Contextual Info: Pb Free Plating Product ISSUED DATE :2005/07/05 REVISED DATE : G2U4407 BVDSS RDS ON ID P-CHANNEL ENHANCEMENT MODE POWER MOSFET -30V 14m -50A Description The G2U4407 provide the designer with the best combination of fast switching, ruggedized device design, low

168E

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT50N03 Power MOSFET 50A, 30V N-CHANNEL POWER MOSFET  FEATURES * RDS ON < 14 mΩ @ VGS = 10 V, ID = 30 A * Low capacitance * Optimized gate charge * Fast switching capability * Avalanche energy specified   SYMBOL ORDERING INFORMATION

CMT60N03

Abstract: CMT60N03N252 CMT60N03N263 N-Channel MOSFET 40V 7A
Contextual Info: CMT60N03 N-CHANNEL Logic Level Power MOSFET APPLICATION FEATURES Buck Converter High Side Switch Low ON Resistance Other Applications Low Gate Charge Peak Current vs Pulse Width Curve VDSS RDS ON Typ. ID Inductive Switching Curves 30V 10.8mΩ 50A Improved UIS Ruggedness

GU4407

Contextual Info: Pb Free Plating Product ISSUED DATE :2005/06/28 REVISED DATE : GU4407 BVDSS RDS ON ID P-CHANNEL ENHANCEMENT MODE POWER MOSFET -30V 14m -50A Description The GU4407 provide the designer with the best combination of fast switching, ruggedized device design, low

GE4407

Contextual Info: Pb Free Plating Product ISSUED DATE :2005/06/28 REVISED DATE : GE4407 BVDSS RDS ON ID P-CHANNEL ENHANCEMENT MODE POWER MOSFET -30V 14m -50A Description The GE4407 provide the designer with the best combination of fast switching, ruggedized device design, low