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    UMW ISL9N306AD3ST

    MOSFET N-CH 30V 50A DPAK
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    DigiKey () ISL9N306AD3ST Digi-Reel 2,498 1
    • 1 $0.91
    • 10 $0.56
    • 100 $0.37
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    ISL9N306AD3ST Cut Tape 2,498 1
    • 1 $0.91
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    ISL9N306AD3ST Reel 2,500
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    Rochester Electronics LLC ISL9N306AD3

    N-CHANNEL POWER MOSFET
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    DigiKey ISL9N306AD3 Bulk 260
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    Rochester Electronics LLC ISL9N306AD3ST

    N-CHANNEL POWER MOSFET
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    DigiKey ISL9N306AD3ST Bulk 662
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    Fairchild Semiconductor Corporation ISL9N306AD3

    Power Field-Effect Transistor, 50A I(D), 30V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
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    Rochester Electronics ISL9N306AD3 8,004 1
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    • 100 $1.11
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    Fairchild Semiconductor Corporation ISL9N306AD3ST

    Power Field-Effect Transistor, 50A I(D), 30V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics ISL9N306AD3ST 8,371 1
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    • 100 $0.44
    • 1000 $0.36
    • 10000 $0.32
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    N306AD Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    n306ad

    Abstract: ISL9N306AD3ST 39e3 N-306A
    Contextual Info: N306AD3ST N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching


    Original     		ISL9N306AD3ST 3400pF O-252 n306ad ISL9N306AD3ST 39e3 N-306A PDF

    n306ad

    Abstract: N306A ISL9N306AD3
    Contextual Info: N306AD3 / N306AD3ST N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs 30V, 50A, 6mΩ General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance.


    Original     		ISL9N306AD3 ISL9N306AD3ST 3400pF n306ad N306A PDF

    N306AD

    Abstract: N306A
    Contextual Info: N306AD3ST N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching


    Original     		ISL9N306AD3ST 3400pF O-252 N306AD N306A PDF

    n306ad

    Abstract: N306A
    Contextual Info: PWM Optimized N306AD3ST/ N306AD3 N-Channel Logic Level UltraFET Trench Power MOSFETs 30V, 50A, 6mΩ General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance.


    Original     		ISL9N306AD3ST/ ISL9N306AD3 3400pF O-252 O-252) O-251AA) n306ad N306A PDF

    n306ad

    Abstract: N306A ISL9N306AD3 ISL9N306AD3ST
    Contextual Info: N306AD3 / N306AD3ST N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs 30V, 50A, 6mΩ General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance.


    Original     		ISL9N306AD3 ISL9N306AD3ST 3400pF n306ad N306A ISL9N306AD3ST PDF