RPE132
Abstract: RPE220 murata rpe131 capacitors GRM43 X7R RPE110 RPE123 RPE131 RPE-114 RPE121 GRM706
Contextual Info: MONOLITHIC CERAMIC CAPACITORS CERAMIC CHIP–COG TYPE GRM SERIES FEATURES • Miniature size ■ No Polarity ■ Nickel Barrier Termination Standard – highly resistant to metal migration ■ Uniform dimensions and configuration ■ Flow for GRM39, 40, 42-6 and
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kta 3-25
Abstract: Allen-Bradley 100-M09 KTL-3-65-N Allen-Bradley Overload relay 140-MN-1600 Allen-Bradley cat 140-mn-0400 Allen-Bradley Overload relay 140-MN-0250 Allen-Bradley cat 140-mn-1000 140M-K5F-D12 140M-K5F-D16 kry 112 76 1
Contextual Info: Circuit-Breakers Bulletin 140 / KTA 3 Bulletin 140 / KTA 3 • • • • Motor Protection Characteristics High Switching Capacity High Current Limiting For Compact Motor Starters Overview . 2-2
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140-mn140-cmn140m-k5f3-160s+14140m-m5f3-250s140m-p5f3-400skta 3-25allen-bradley 100-m09ktl-3-65-nallen-bradley overload relay 140-mn-1600allen-bradley cat 140-mn-0400allen-bradley overload relay 140-mn-0250allen-bradley cat 140-mn-1000140m-k5f-d12140m-k5f-d16kry 112 76 1
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40kv capacitor
Abstract: 40KVDC lightning arrestor
Contextual Info: HIGH VOLTAGE CAPACITORS 10KV TO 40KVDC E.I.A. CLASS I DHS SERIES mnfíata /nnoraioA t/i E/cctw/ucs Murata Electronic's new High Voltage Ceramic Capacitors DHS N 4700 Series is designed to meet the stringent requirements of high voltage applications and feature a low
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40kvdcdhs60c-22-c40kv capacitor+1lightning arrestor
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N306AS
Abstract: n306a ISL9N306AP3 ISL9N306AS3ST 45E-2
Contextual Info: ISL9N306AP3/ISL9N306AS3ST N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching
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N306AS
Abstract: N306A ISL9N306AS3ST ISL9N306AP3
Contextual Info: ISL9N306AP3/ISL9N306AS3ST N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching
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n306ad
Abstract: ISL9N306AD3ST 39e3 N-306A
Contextual Info: ISL9N306AD3ST N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching
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n306ad
Abstract: N306A ISL9N306AD3
Contextual Info: ISL9N306AD3 / ISL9N306AD3ST N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs 30V, 50A, 6mΩ General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance.
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RJK03P7DPA
Abstract: NP109N055PUJ rjh60d7bdpq rjh60t04 rjp65t43 NP75N04YUG NP60N055MUK NP109N04PUK RJU6052SDPD-E0 PS2761B-1
Contextual Info: RENESAS Electronics New Product Highlight Highlight of Discrete Devices Renesas Electronics Corporation Analog & Power Devices Marketing & Production Planning Division July 2013 2012 Renesas Electronics Corporation. All rights reserved. 00000-A RENESAS Discrete Devices Position
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0000-apae-aa-12-0177-1pae-aa-12-0049-1rjk03p7dpa+9np109n055pujrjh60d7bdpqrjh60t04rjp65t43np75n04yugnp60n055muknp109n04pukrju6052sdpd-e0ps2761b-1
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Diode 400V 5A
Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
Contextual Info: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM
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2c4152c4252c4442c746+162n1131l2n11322n1132csm2n1132dcsm2n12082n1209diode 400v 5alm1083bzy55ctransistor 2n1208bc109 spiceirf9024cv7404mnt6337jsml1258sml1004rgn
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GRM40 COG
Abstract: GRM42-6 GRM40COG MURATA GRM44-1 COG grm39 cog murata grm39 capacitor marking code XF 270PF GRM42 murata electronics GRM40 b
Contextual Info: miiRata MONOLITHIC CERAMIC CAPACITORS CERAMIC CHIP-COG TYPE GRM SERIES /nn oyator in Eïccf/wucs FEATURES • Largest production capacity and volume in the world M in ia tu r e size ■ N o Polarity ■ Nickel Barrier Termination Standard highly resistant to metal migration
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N306AD
Abstract: N306A
Contextual Info: ISL9N306AD3ST N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching
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n306ad
Abstract: N306A
Contextual Info: PWM Optimized ISL9N306AD3ST/ ISL9N306AD3 N-Channel Logic Level UltraFET Trench Power MOSFETs 30V, 50A, 6mΩ General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance.
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n306ad
Abstract: N306A ISL9N306AD3 ISL9N306AD3ST
Contextual Info: ISL9N306AD3 / ISL9N306AD3ST N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs 30V, 50A, 6mΩ General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance.
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