RPE132
Abstract: RPE220 murata rpe131 capacitors GRM43 X7R RPE110 RPE123 RPE131 RPE-114 RPE121 GRM706
Contextual Info: MONOLITHIC CERAMIC CAPACITORS CERAMIC CHIP–COG TYPE GRM SERIES FEATURES • Miniature size ■ No Polarity ■ Nickel Barrier Termination Standard – highly resistant to metal migration ■ Uniform dimensions and configuration ■ Flow for GRM39, 40, 42-6 and
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GRM39,
GRM36
GRM40
GNM30-401
30ppm/
RPE132
RPE220
murata rpe131 capacitors
GRM43 X7R
RPE110
RPE123
RPE131
RPE-114
RPE121
GRM706
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kta 3-25
Abstract: Allen-Bradley 100-M09 KTL-3-65-N Allen-Bradley Overload relay 140-MN-1600 Allen-Bradley cat 140-mn-0400 Allen-Bradley Overload relay 140-MN-0250 Allen-Bradley cat 140-mn-1000 140M-K5F-D12 140M-K5F-D16 kry 112 76 1
Contextual Info: Circuit-Breakers Bulletin 140 / KTA 3 Bulletin 140 / KTA 3 • • • • Motor Protection Characteristics High Switching Capacity High Current Limiting For Compact Motor Starters Overview . 2-2
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140-MN
140-CMN
140M-K5F
3-160S
140M-M5F
3-250S
140M-P5F
3-400S
140M-K5F
3-160S)
kta 3-25
Allen-Bradley 100-M09
KTL-3-65-N
Allen-Bradley Overload relay 140-MN-1600
Allen-Bradley cat 140-mn-0400
Allen-Bradley Overload relay 140-MN-0250
Allen-Bradley cat 140-mn-1000
140M-K5F-D12
140M-K5F-D16
kry 112 76 1
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40kv capacitor
Abstract: 40KVDC lightning arrestor
Contextual Info: HIGH VOLTAGE CAPACITORS 10KV TO 40KVDC E.I.A. CLASS I DHS SERIES mnfíata /nnoraioA t/i E/cctw/ucs Murata Electronic's new High Voltage Ceramic Capacitors DHS N 4700 Series is designed to meet the stringent requirements of high voltage applications and feature a low
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40KVDC
DHS60
C-22-C.
40kv capacitor
lightning arrestor
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N306AS
Abstract: n306a ISL9N306AP3 ISL9N306AS3ST 45E-2
Contextual Info: ISL9N306AP3/ISL9N306AS3ST N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching
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ISL9N306AP3/ISL9N306AS3ST
3400pF
O-263AB
O-220AB
N306AS
n306a
ISL9N306AP3
ISL9N306AS3ST
45E-2
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N306AS
Abstract: N306A ISL9N306AS3ST ISL9N306AP3
Contextual Info: ISL9N306AP3/ISL9N306AS3ST N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching
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ISL9N306AP3/ISL9N306AS3ST
3400pF
O-263AB
O-220AB
N306AS
N306A
ISL9N306AS3ST
ISL9N306AP3
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n306ad
Abstract: ISL9N306AD3ST 39e3 N-306A
Contextual Info: ISL9N306AD3ST N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching
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ISL9N306AD3ST
3400pF
O-252
n306ad
ISL9N306AD3ST
39e3
N-306A
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n306ad
Abstract: N306A ISL9N306AD3
Contextual Info: ISL9N306AD3 / ISL9N306AD3ST N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs 30V, 50A, 6mΩ General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance.
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ISL9N306AD3
ISL9N306AD3ST
3400pF
n306ad
N306A
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RJK03P7DPA
Abstract: NP109N055PUJ rjh60d7bdpq rjh60t04 rjp65t43 NP75N04YUG NP60N055MUK NP109N04PUK RJU6052SDPD-E0 PS2761B-1
Contextual Info: RENESAS Electronics New Product Highlight Highlight of Discrete Devices Renesas Electronics Corporation Analog & Power Devices Marketing & Production Planning Division July 2013 2012 Renesas Electronics Corporation. All rights reserved. 00000-A RENESAS Discrete Devices Position
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0000-A
PAE-AA-12-0177-1
PAE-AA-12-0049-1
RJK03P7DPA
NP109N055PUJ
rjh60d7bdpq
rjh60t04
rjp65t43
NP75N04YUG
NP60N055MUK
NP109N04PUK
RJU6052SDPD-E0
PS2761B-1
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Diode 400V 5A
Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
Contextual Info: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM
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2C415
2C425
2C444
2C746
2N1131L
2N1132
2N1132CSM
2N1132DCSM
2N1208
2N1209
Diode 400V 5A
lm1083
BZY55C
transistor 2n1208
bc109 spice
IRF9024
CV7404
mnt6337j
sml1258
SML1004RGN
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GRM40 COG
Abstract: GRM42-6 GRM40COG MURATA GRM44-1 COG grm39 cog murata grm39 capacitor marking code XF 270PF GRM42 murata electronics GRM40 b
Contextual Info: miiRata MONOLITHIC CERAMIC CAPACITORS CERAMIC CHIP-COG TYPE GRM SERIES /nn oyator in Eïccf/wucs FEATURES • Largest production capacity and volume in the world M in ia tu r e size ■ N o Polarity ■ Nickel Barrier Termination Standard highly resistant to metal migration
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GRM39,
C-22-C.
GRM40 COG
GRM42-6
GRM40COG
MURATA GRM44-1 COG
grm39 cog
murata grm39 capacitor
marking code XF
270PF GRM42 murata electronics
GRM40 b
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N306AD
Abstract: N306A
Contextual Info: ISL9N306AD3ST N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching
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ISL9N306AD3ST
3400pF
O-252
N306AD
N306A
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n306ad
Abstract: N306A
Contextual Info: PWM Optimized ISL9N306AD3ST/ ISL9N306AD3 N-Channel Logic Level UltraFET Trench Power MOSFETs 30V, 50A, 6mΩ General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance.
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ISL9N306AD3ST/
ISL9N306AD3
3400pF
O-252
O-252)
O-251AA)
n306ad
N306A
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n306ad
Abstract: N306A ISL9N306AD3 ISL9N306AD3ST
Contextual Info: ISL9N306AD3 / ISL9N306AD3ST N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs 30V, 50A, 6mΩ General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance.
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ISL9N306AD3
ISL9N306AD3ST
3400pF
n306ad
N306A
ISL9N306AD3ST
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