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    N306AS

    Abstract: n306a ISL9N306AP3 ISL9N306AS3ST 45E-2
    Contextual Info: ISL9N306AP3/N306AS3ST N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching


    Original     		isl9n306ap3/isl9n306as3st3400pfo-263abo-220ab+5n306asn306aisl9n306ap3isl9n306as3st45e-2 PDF

    N306AS

    Abstract: N306A ISL9N306AS3ST ISL9N306AP3
    Contextual Info: ISL9N306AP3/N306AS3ST N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching


    Original     		isl9n306ap3/isl9n306as3st3400pfo-263abo-220ab+4n306asn306aisl9n306as3stisl9n306ap3 PDF