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    Rochester Electronics LLC ISL9N306AS3ST

    N-CHANNEL POWER MOSFET
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    DigiKey ISL9N306AS3ST Bulk 662
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    Fairchild Semiconductor Corporation ISL9N306AS3ST

    Power Field-Effect Transistor, 75A I(D), 30V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
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    Rochester Electronics ISL9N306AS3ST 33,931 1
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    Win Source Electronics ISL9N306AS3ST 5,000
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    N306AS Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    N306AS

    Abstract: n306a ISL9N306AP3 ISL9N306AS3ST 45E-2
    Contextual Info: ISL9N306AP3/N306AS3ST N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching


    Original     		ISL9N306AP3/ISL9N306AS3ST 3400pF O-263AB O-220AB N306AS n306a ISL9N306AP3 ISL9N306AS3ST 45E-2 PDF

    N306AS

    Abstract: N306A ISL9N306AS3ST ISL9N306AP3
    Contextual Info: ISL9N306AP3/N306AS3ST N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching


    Original     		ISL9N306AP3/ISL9N306AS3ST 3400pF O-263AB O-220AB N306AS N306A ISL9N306AS3ST ISL9N306AP3 PDF