500V 5A ULTRA FAST RECOVERY DIODE Search Results
500V 5A ULTRA FAST RECOVERY DIODE Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
---|---|---|---|---|---|
LBUA5QJ2AB-828 | Murata Manufacturing Co Ltd | QORVO UWB MODULE | |||
LBUA5QJ2AB-828EVB | Murata Manufacturing Co Ltd | QORVO UWB MODULE EVALUATION KIT | |||
LXMSJZNCMH-225 | Murata Manufacturing Co Ltd | Ultra small RAIN RFID chip tag | |||
LXMS21NCMH-230 | Murata Manufacturing Co Ltd | Ultra small RAIN RFID chip tag | |||
CO-213UHFMX20-010 |
![]() |
Amphenol CO-213UHFMX20-010 UHF (PL-259) Male to UHF (PL-259) Male (RG213) 50 Ohm Coaxial Cable Assembly (High-Power / Low-Loss) 10 ft |
500V 5A ULTRA FAST RECOVERY DIODE Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
---|---|---|---|
APT9F100B
Abstract: APT9F100S MIC4452 500v 5a ultra fast recovery diode
|
Original |
APT9F100B APT9F100S 200ns APT9F100B APT9F100S MIC4452 500v 5a ultra fast recovery diode | |
500W TRANSISTOR AUDIO AMPLIFIER
Abstract: IN5822 diode irfs6408 220V ac to 9V dc converter circuit DC 48v AC 220v 500w smps P-Channel MOSFET 800v SB550 transistor drive motor 10A with transistor P channel MOSFET P channel 600v 20a IGBT list of n channel power mosfet
|
Original |
Power247TM, 500W TRANSISTOR AUDIO AMPLIFIER IN5822 diode irfs6408 220V ac to 9V dc converter circuit DC 48v AC 220v 500w smps P-Channel MOSFET 800v SB550 transistor drive motor 10A with transistor P channel MOSFET P channel 600v 20a IGBT list of n channel power mosfet | |
Contextual Info: TM UniFET FDP7N50U/FDPF7N50U 500V N-Channel MOSFET Features Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • 5A, 500V, RDS on = 1.5 @VGS = 10 V |
Original |
FDP7N50U/FDPF7N50U | |
FDPF7N50U
Abstract: FDP7N50U
|
Original |
FDP7N50U/FDPF7N50U FDPF7N50U FDP7N50U | |
APT5F100K
Abstract: MIC4452 1000v5a
|
Original |
APT5F100K 155nS O-220 FREDFE42 APT5F100K MIC4452 1000v5a | |
APT9M100B
Abstract: APT9M100S MIC4452
|
Original |
APT9M100B APT9M100S APT9M100B APT9M100S MIC4452 | |
mosfet 1000v 9A
Abstract: APT9M100B APT9M100S MIC4452 1000v 5a ultra fast recovery diode
|
Original |
APT9M100B APT9M100S mosfet 1000v 9A APT9M100B APT9M100S MIC4452 1000v 5a ultra fast recovery diode | |
stepper motor driver full bridge 6A
Abstract: mosfet 600V 20A 600v 30a IGBT 20NB50 PSO-36 igbt to220 Triac 3a 600v Motor Driver IC L293D L298N IGBT full bridge
|
Original |
BTW68/69 BF3506TV /10TV BHA/K3012TV 0-55A 00V/35A 000V/35A L4981A/B STW/Y/ExNA60 STTAxx06 stepper motor driver full bridge 6A mosfet 600V 20A 600v 30a IGBT 20NB50 PSO-36 igbt to220 Triac 3a 600v Motor Driver IC L293D L298N IGBT full bridge | |
Contextual Info: TM Ultra FRFET FDP12N50U / FDPF12N50UT tm N-Channel MOSFET, FRFET 500V, 10A, 0.8Ω Features Description • RDS on = 0.65Ω ( Typ.)@ VGS = 10V, ID = 5A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, |
Original |
FDP12N50U FDPF12N50UT | |
FDPF*12n50ut
Abstract: FDPF12N50UT FDP12N50U FDP12N50
|
Original |
FDP12N50U FDPF12N50UT FDPF12N50UT FDPF*12n50ut FDP12N50 | |
FDPF*12n50ut
Abstract: FDPF12N50UT
|
Original |
FDP12N50U FDPF12N50UT FDPF12N50UT FDPF*12n50ut | |
FDPF5N50T
Abstract: MOSFET 500V 5A
|
Original |
FDP5N50 FDPF5N50T FDPF5N50T MOSFET 500V 5A | |
Contextual Info: UniFETTM FDP5N50 / FDPF5N50T tm N-Channel MOSFET 500V, 5A, 1.4Ω Features Description • RDS on = 1.15Ω ( Typ.)@ VGS = 10V, ID = 2.5A • Low gate charge ( Typ. 11nC) These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar |
Original |
FDP5N50 FDPF5N50T | |
Contextual Info: UniFETTM FDP5N50 / FDPF5N50T tm N-Channel MOSFET 500V, 5A, 1.4Ω Features Description • RDS on = 1.15Ω ( Typ.)@ VGS = 10V, ID = 2.5A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. |
Original |
FDP5N50 FDPF5N50T FDPF5N50 FDPF5N50T | |
|
|||
Contextual Info: QFET FQB5N50C/FQI5N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to |
Original |
FQB5N50C/FQI5N50C FQB5N50C/FQI5N50C | |
13003 charger
Abstract: 230v to 5v circuit using 13003 transistor 121k 1kv capacitor
|
Original |
ACT334 ACT512 ACT410 ACT411 ACT410/411 ACT413 F/400V SC053 1000pF/400V 13003 charger 230v to 5v circuit using 13003 transistor 121k 1kv capacitor | |
230V ac to 5V dc usb charger circuit
Abstract: D13005 TRANSISTOR SMD p1 DIODE SMD d8 EE20 core Flyback transformer
|
Original |
ACT36X, ACT33X 2012-Octâ ACT365-02 EPC17) 85-264Vac 2200mA 230V ac to 5V dc usb charger circuit D13005 TRANSISTOR SMD p1 DIODE SMD d8 EE20 core Flyback transformer | |
Contextual Info: QFET FQD5N50C / FQU5N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to |
Original |
FQD5N50C FQU5N50C FQU5N50C | |
Contextual Info: UniFET TM FDP5N50F / FDPF5N50FT tm N-Channel MOSFET, FRFET 500V, 4.5A, 1.55Ω Features Description • RDS on = 1.25Ω ( Typ.)@ VGS = 10V, ID = 2.25A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar |
Original |
FDP5N50F FDPF5N50FT | |
FDPF5N50FTContextual Info: UniFET TM FDP5N50F / FDPF5N50FT tm N-Channel MOSFET, FRFET 500V, 4.5A, 1.55Ω Features Description • RDS on = 1.25Ω ( Typ.)@ VGS = 10V, ID = 2.25A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar |
Original |
FDP5N50F FDPF5N50FT FDPF5N50FT | |
Contextual Info: UniFETTM FDB12N50U tm N-Channel MOSFET, FRFET 500V, 10A, 0.8Ω Features Description • RDS on = 0.65Ω ( Typ.)@ VGS = 10V, ID = 5A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, |
Original |
FDB12N50U FDB12N50U | |
FDPF5N50FTContextual Info: UniFETTM FDP5N50F / FDPF5N50FT tm N-Channel MOSFET, FRFET 500V, 4.5A, 1.55Ω Features Description • RDS on = 1.25Ω ( Typ.)@ VGS = 10V, ID = 2.25A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar |
Original |
FDP5N50F FDPF5N50FT FDPF5N50FT | |
FDPF5N50FT
Abstract: FDP5N50F
|
Original |
FDP5N50F FDPF5N50FT FDPF5N50FT | |
Contextual Info: 3DE r=J D • 7 ^ 2 3 7 JDG2T73S 1 ■ - ' P 3 c - l 3 SGS-THOMSON s 6 s' thomson ^ 7 # M M i d ü ( g ¥ ^ ! 0(g§ B U Z353 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE BUZ353 Vqss 500 V ^DSton) 0.6 ß 9.5 A • HIGH SPEED SWITCHING • HIGH VOLTAGE - 500V FOR OFF-LINE SMPS |
OCR Scan |
JDG2T73S BUZ353 100KHz O-218 |