500V 5A ULTRA FAST RECOVERY DIODE Search Results

APT9F100B

Abstract: APT9F100S MIC4452 500v 5a ultra fast recovery diode
Contextual Info: APT9F100B APT9F100S 1000V, 9A, 1.6Ω Max, trr ≤200ns N-Channel FREDFET POWER MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced

500W TRANSISTOR AUDIO AMPLIFIER

Abstract: IN5822 diode irfs6408 220V ac to 9V dc converter circuit DC 48v AC 220v 500w smps P-Channel MOSFET 800v SB550 transistor drive motor 10A with transistor P channel MOSFET P channel 600v 20a IGBT list of n channel power mosfet
Contextual Info: Power for Computing Analog Discrete Interface & Logic Power Solutions for • Conversion · Distribution · Management · Minimization There’s a lot more to power than power management. Optimizing system power in computing applications requires innovative products for power conversion, distribution,

Contextual Info: TM UniFET FDP7N50U/FDPF7N50U 500V N-Channel MOSFET Features Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • 5A, 500V, RDS on = 1.5 @VGS = 10 V

FDPF7N50U

Abstract: FDP7N50U
Contextual Info: TM UniFET FDP7N50U/FDPF7N50U 500V N-Channel MOSFET Features Description • 5A, 500V, RDS on = 1.5 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

APT5F100K

Abstract: MIC4452 1000v5a
Contextual Info: APT5F100K 1000V, 5A 2.8Ω Max, Trr ≤ 155nS N-Channel FREDFET POWER MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced

APT9M100B

Abstract: APT9M100S MIC4452
Contextual Info: APT9M100B APT9M100S 1000V, 9A, 1.40Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure

mosfet 1000v 9A

Abstract: APT9M100B APT9M100S MIC4452 1000v 5a ultra fast recovery diode
Contextual Info: APT9M100B APT9M100S 1000V, 9A, 1.50Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure

stepper motor driver full bridge 6A

Abstract: mosfet 600V 20A 600v 30a IGBT 20NB50 PSO-36 igbt to220 Triac 3a 600v Motor Driver IC L293D L298N IGBT full bridge
Contextual Info: BRUSHLESS MOTOR DRIVE STMicroelectronics SOLUTIONS Mains Pre- Rectification Regulation Inverter Tacho/ Encoder Frequency Converter Servo Motor Drive Inverter Controller Tacho/ Encoder Inverter RECOMMENDED DEVICES MAIN FEATURES Mains Rectification BTW68/69 - xxx

Contextual Info: TM Ultra FRFET FDP12N50U / FDPF12N50UT tm N-Channel MOSFET, FRFET 500V, 10A, 0.8Ω Features Description • RDS on = 0.65Ω ( Typ.)@ VGS = 10V, ID = 5A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,

FDPF*12n50ut

Abstract: FDPF12N50UT FDP12N50U FDP12N50
Contextual Info: TM Ultra FRFET FDP12N50U / FDPF12N50UT tm N-Channel MOSFET, FRFET 500V, 10A, 0.8Ω Features Description • RDS on = 0.65Ω ( Typ.)@ VGS = 10V, ID = 5A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,

FDPF*12n50ut

Abstract: FDPF12N50UT
Contextual Info: TM Ultra FRFET FDP12N50U / FDPF12N50UT tm N-Channel MOSFET, FRFET 500V, 10A, 0.8Ω Features Description • RDS on = 0.65Ω ( Typ.)@ VGS = 10V, ID = 5A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,

FDPF5N50T

Abstract: MOSFET 500V 5A
Contextual Info: UniFETTM FDP5N50 / FDPF5N50T tm N-Channel MOSFET 500V, 5A, 1.4Ω Features Description • RDS on = 1.15Ω ( Typ.)@ VGS = 10V, ID = 2.5A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Contextual Info: UniFETTM FDP5N50 / FDPF5N50T tm N-Channel MOSFET 500V, 5A, 1.4Ω Features Description • RDS on = 1.15Ω ( Typ.)@ VGS = 10V, ID = 2.5A • Low gate charge ( Typ. 11nC) These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar

Contextual Info: UniFETTM FDP5N50 / FDPF5N50T tm N-Channel MOSFET 500V, 5A, 1.4Ω Features Description • RDS on = 1.15Ω ( Typ.)@ VGS = 10V, ID = 2.5A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Contextual Info: QFET FQB5N50C/FQI5N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

13003 charger

Abstract: 230v to 5v circuit using 13003 transistor 121k 1kv capacitor
Contextual Info: Innovative Green Power Solutions AC/DC Charger/Adapter Reference Designs For DOE Level 6 Standard Rev 1.4 Jun 2013 -1- www.active-semi.com High Performance AC/DC Switching Power Solutions Application Change Note Revision History Page 9,10 Page 11,12 2013 - Jun - 26

230V ac to 5V dc usb charger circuit

Abstract: D13005 TRANSISTOR SMD p1 DIODE SMD d8 EE20 core Flyback transformer
Contextual Info: Innovative Green Power Solutions AC/DC Charger/Adapter Reference Designs ACT36X, ACT33X Rev 2.5 Oct 2012 www.active-semi.com ActivePSR TM High Efficiency AC/DC Primary Switching Solutions Application Change Note Revision History Page 12~13 2012-Oct– 19 Rev 2.5

Contextual Info: QFET FQD5N50C / FQU5N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

Contextual Info: UniFET TM FDP5N50F / FDPF5N50FT tm N-Channel MOSFET, FRFET 500V, 4.5A, 1.55Ω Features Description • RDS on = 1.25Ω ( Typ.)@ VGS = 10V, ID = 2.25A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar

FDPF5N50FT

Contextual Info: UniFET TM FDP5N50F / FDPF5N50FT tm N-Channel MOSFET, FRFET 500V, 4.5A, 1.55Ω Features Description • RDS on = 1.25Ω ( Typ.)@ VGS = 10V, ID = 2.25A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar

Contextual Info: UniFETTM FDB12N50U tm N-Channel MOSFET, FRFET 500V, 10A, 0.8Ω Features Description • RDS on = 0.65Ω ( Typ.)@ VGS = 10V, ID = 5A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,

FDPF5N50FT

Contextual Info: UniFETTM FDP5N50F / FDPF5N50FT tm N-Channel MOSFET, FRFET 500V, 4.5A, 1.55Ω Features Description • RDS on = 1.25Ω ( Typ.)@ VGS = 10V, ID = 2.25A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar

FDPF5N50FT

Abstract: FDP5N50F
Contextual Info: UniFETTM FDP5N50F / FDPF5N50FT tm N-Channel MOSFET, FRFET 500V, 4.5A, 1.55Ω Features Description • RDS on = 1.25Ω ( Typ.)@ VGS = 10V, ID = 2.25A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar

Contextual Info: 3DE r=J D • 7 ^ 2 3 7 JDG2T73S 1 ■ - ' P 3 c - l 3 SGS-THOMSON s 6 s' thomson ^ 7 # M M i d ü ( g ¥ ^ ! 0(g§ B U Z353 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE BUZ353 Vqss 500 V ^DSton) 0.6 ß 9.5 A • HIGH SPEED SWITCHING • HIGH VOLTAGE - 500V FOR OFF-LINE SMPS