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    4SEP2002 Search Results

    4SEP2002 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    M58BW016xB

    Abstract: M58BW016BB M58BW016BT M58BW016DB M58BW016DT PQFP80
    Contextual Info: M58BW016BT, M58BW016BB M58BW016DT, M58BW016DB 16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories PE4FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VDD = 2.7V to 3.6V for Program, Erase and Read – VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers


    Original     		M58BW016BT, M58BW016BB M58BW016DT, M58BW016DB 512Kb 100ns 56MHz PQFP80 M58BW016B LBGA80 M58BW016xB M58BW016BB M58BW016BT M58BW016DB M58BW016DT PQFP80 PDF

    Contextual Info: M58BW016DB M58BW016DT 16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VDD = 2.7V to 3.6V for Program, Erase and Read – VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers – VPP = 12V for fast Program (optional)


    Original     		M58BW016DB M58BW016DT 512Kb 56MHz PDF

    la 7913

    Abstract: JESD97 M58BW016D M58BW016DB M58BW016DT PQFP80 00005H
    Contextual Info: M58BW016DB M58BW016DT 16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VDD = 2.7V to 3.6V for Program, Erase and Read – VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers – VPP = 12V for fast Program (optional)


    Original     		M58BW016DB M58BW016DT 512Kb 56MHz la 7913 JESD97 M58BW016D M58BW016DB M58BW016DT PQFP80 00005H PDF

    Q002

    Abstract: JESD97 M58BW016D M58BW016DB M58BW016DT PQFP80 13-May-2003 tbhk M58BW016DB7 8835h
    Contextual Info: M58BW016DB M58BW016DT 16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories Feature summary • Supply voltage – VDD = 2.7V to 3.6V for Program, Erase and Read – VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers – VPP = 12V for Fast Program (optional)


    Original     		M58BW016DB M58BW016DT 512Kb 56MHz Q002 JESD97 M58BW016D M58BW016DB M58BW016DT PQFP80 13-May-2003 tbhk M58BW016DB7 8835h PDF

    M58BW016BB

    Abstract: M58BW016BT M58BW016DB M58BW016DT PQFP80
    Contextual Info: M58BW016BT, M58BW016BB M58BW016DT, M58BW016DB 16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories PE4FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VDD = 2.7V to 3.6V for Program, Erase and Read – VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers


    Original     		M58BW016BT, M58BW016BB M58BW016DT, M58BW016DB 512Kb 100ns 56MHz PQFP80 M58BW016B LBGA80 M58BW016BB M58BW016BT M58BW016DB M58BW016DT PQFP80 PDF

    Contextual Info: M58BW016DB M58BW016DT M58BW016FT M58BW016FB 16 Mbit 512Kb x32, Boot Block, Burst 3V supply Flash memories Feature summary • Supply voltage – VDD = 2.7V to 3.6V for Program, Erase and Read – VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers – VPP = 12V for Fast Program (optional)


    Original     		M58BW016DB M58BW016DT M58BW016FT M58BW016FB 512Kb 56MHz PDF

    Contextual Info: M58BW016DB M58BW016DT M58BW016FT M58BW016FB 16 Mbit 512Kb x32, Boot Block, Burst 3V supply Flash memories Feature summary • Supply voltage – VDD = 2.7V to 3.6V for Program, Erase and Read – VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers – VPP = 12V for Fast Program (optional)


    Original     		M58BW016DB M58BW016DT M58BW016FT M58BW016FB 512Kb 56MHz PDF

    M58BW016

    Abstract: Q002 M58BW016DB M58BW016DT M58BW016FB M58BW016FT PQFP80
    Contextual Info: M58BW016DB M58BW016DT M58BW016FT M58BW016FB 16 Mbit 512Kb x32, Boot Block, Burst 3V supply Flash memories Features • Supply voltage – VDD = 2.7V to 3.6V for Program, Erase and Read – VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers – VPP = 12V for Fast Program (optional)


    Original     		M58BW016DB M58BW016DT M58BW016FT M58BW016FB 512Kb 56MHz PQFP80 M58BW016 Q002 M58BW016DT M58BW016FB PQFP80 PDF

    Contextual Info: M58BW016DB M58BW016DT M58BW016FT M58BW016FB 16 Mbit 512 Kbit x 32, boot block, burst 3 V supply Flash memories Features • Supply voltage – VDD = 2.7 V to 3.6 V for program, erase and read – VDDQ = VDDQIN = 2.4 V to 3.6 V for I/O buffers – VPP = 12 V for fast program (optional)


    Original     		M58BW016DB M58BW016DT M58BW016FT M58BW016FB PQFP80 PDF

    Contextual Info: M58BW016DB M58BW016DT M58BW016FT M58BW016FB 16 Mbit 512 Kb x 32, boot block, burst 3 V supply Flash memories Features • Supply voltage – VDD = 2.7 V to 3.6 V for Program, Erase and Read – VDDQ = VDDQIN = 2.4 V to 3.6 V for I/O buffers – VPP = 12 V for Fast Program (optional)


    Original     		M58BW016DB M58BW016DT M58BW016FT M58BW016FB PDF

    M58BW016BB

    Abstract: M58BW016BT M58BW016DB M58BW016DT PQFP80 m58bw016xb
    Contextual Info: M58BW016BT, M58BW016BB M58BW016DT, M58BW016DB 16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VDD = 2.7V to 3.6V for Program, Erase and Read – VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers


    Original     		M58BW016BT, M58BW016BB M58BW016DT, M58BW016DB 512Kb 100ns 56MHz PQFP80 M58BW016B LBGA80 M58BW016BB M58BW016BT M58BW016DB M58BW016DT PQFP80 m58bw016xb PDF

    M58BW016

    Contextual Info: M58BW016DB M58BW016DT M58BW016FT M58BW016FB 16 Mbit 512 Kbit x 32, boot block, burst 3 V supply Flash memories Features Supply voltage – VDD = 2.7 V to 3.6 V for program, erase and read – VDDQ = VDDQIN = 2.4 V to 3.6 V for I/O buffers – VPP = 12 V for fast program (optional)


    Original     		M58BW016DB M58BW016DT M58BW016FT M58BW016FB M58BW016 PDF

    Q002

    Abstract: M58BW016DB M58BW016DT M58BW016FB M58BW016FT PQFP80 56MHZ M58BW016
    Contextual Info: M58BW016DB M58BW016DT M58BW016FT M58BW016FB 16 Mbit 512 Kb x 32, boot block, burst 3 V supply Flash memories Features • Supply voltage – VDD = 2.7 V to 3.6 V for Program, Erase and Read – VDDQ = VDDQIN = 2.4 V to 3.6 V for I/O buffers – VPP = 12 V for Fast Program (optional)


    Original     		M58BW016DB M58BW016DT M58BW016FT M58BW016FB PQFP80 Q002 M58BW016DT M58BW016FB PQFP80 56MHZ M58BW016 PDF

    Q002

    Abstract: M58BW016DB M58BW016DT M58BW016FB M58BW016FT PQFP80
    Contextual Info: M58BW016DB M58BW016DT M58BW016FT M58BW016FB 16 Mbit 512 Kbit x 32, boot block, burst 3 V supply Flash memories Features • Supply voltage – VDD = 2.7 V to 3.6 V for program, erase and read – VDDQ = VDDQIN = 2.4 V to 3.6 V for I/O buffers – VPP = 12 V for fast program (optional)


    Original     		M58BW016DB M58BW016DT M58BW016FT M58BW016FB PQFP80 Q002 M58BW016DT M58BW016FB PQFP80 PDF