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    M58BW016FB Search Results

    M58BW016FB Datasheets (4)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    M58BW016FB
    		STMicroelectronics 16 Mbit (512 Kb x 32, boot block, burst) 3 V supply Flash memories Original PDF 522.18KB 69
    M58BW016FB7T3F
    		Numonyx Memory, Integrated Circuits (ICs), IC FLASH 16MBIT 70NS 80PQFP Original PDF 70
    M58BW016FB7T3T
    		Numonyx Memory, Integrated Circuits (ICs), IC FLASH 16MBIT 70NS 80PQFP Original PDF 70
    M58BW016FB7T3T TR
    		Micron Technology Integrated Circuits (ICs) - Memory - IC FLASH 16M PARALLEL 80PQFP Original PDF 1.34MB
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    M58BW016FB Price and Stock

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    Alliance Memory Inc M58BW016FB7T3F

    IC FLASH 16MBIT CFI 80PQFP
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    DigiKey () M58BW016FB7T3F Cut Tape 956 1
    • 1 $9.96
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    M58BW016FB7T3F Reel 500 500
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    M58BW016FB7T3F Digi-Reel 1
    • 1 $9.92
    • 10 $8.80
    • 100 $7.81
    • 1000 $7.45
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    Avnet Americas M58BW016FB7T3F Reel 1,500
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    Mouser Electronics M58BW016FB7T3F
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    Newark M58BW016FB7T3F Reel 1,500
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    Chip Stock M58BW016FB7T3F 4,288
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    Micron Technology Inc M58BW016FB7D150T-TR

    IC FLASH 16MBIT PARALLEL
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    DigiKey M58BW016FB7D150T-TR Reel
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    STMicroelectronics M58BW016FB7ZA3T

    16 MBIT (512 KBIT X 32, BOOT BLOCK, BURST) 3V SUPPLY FLASH MEMORY Flash, 512KX32, 70ns, PBGA80
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    ComSIT USA M58BW016FB7ZA3T 50
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    Micron Technology Inc M58BW016FB7T3F

    Parallel NOR Flash 16Mbit 32 8/8 PQFP 1 512 k x 32 70 ns
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    Karl Kruse GmbH & Co KG M58BW016FB7T3F 51,500
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    Chip 1 Exchange M58BW016FB7T3F 80,000
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    Chip Stock M58BW016FB7T3F 4,273
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    Micron Technology Inc M58BW016FB7T3T TR

    IC Flash 16MBIT 70NS 80PQFP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Chip Stock M58BW016FB7T3T TR 4,339
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    M58BW016FB Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: M58BW016DB M58BW016DT M58BW016FT M58BW016FB 16 Mbit 512Kb x32, Boot Block, Burst 3V supply Flash memories Feature summary • Supply voltage – VDD = 2.7V to 3.6V for Program, Erase and Read – VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers – VPP = 12V for Fast Program (optional)


    Original     		M58BW016DB M58BW016DT M58BW016FT M58BW016FB 512Kb 56MHz PDF

    Contextual Info: M58BW016DB M58BW016DT M58BW016FT M58BW016FB 16 Mbit 512Kb x32, Boot Block, Burst 3V supply Flash memories Feature summary • Supply voltage – VDD = 2.7V to 3.6V for Program, Erase and Read – VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers – VPP = 12V for Fast Program (optional)


    Original     		M58BW016DB M58BW016DT M58BW016FT M58BW016FB 512Kb 56MHz PDF

    M58BW016

    Abstract: Q002 M58BW016DB M58BW016DT M58BW016FB M58BW016FT PQFP80
    Contextual Info: M58BW016DB M58BW016DT M58BW016FT M58BW016FB 16 Mbit 512Kb x32, Boot Block, Burst 3V supply Flash memories Features • Supply voltage – VDD = 2.7V to 3.6V for Program, Erase and Read – VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers – VPP = 12V for Fast Program (optional)


    Original     		M58BW016DB M58BW016DT M58BW016FT M58BW016FB 512Kb 56MHz PQFP80 M58BW016 Q002 M58BW016DT M58BW016FB PQFP80 PDF

    Contextual Info: M58BW016DB M58BW016DT M58BW016FT M58BW016FB 16 Mbit 512 Kbit x 32, boot block, burst 3 V supply Flash memories Features • Supply voltage – VDD = 2.7 V to 3.6 V for program, erase and read – VDDQ = VDDQIN = 2.4 V to 3.6 V for I/O buffers – VPP = 12 V for fast program (optional)


    Original     		M58BW016DB M58BW016DT M58BW016FT M58BW016FB PQFP80 PDF

    Contextual Info: M58BW016DB M58BW016DT M58BW016FT M58BW016FB 16 Mbit 512 Kb x 32, boot block, burst 3 V supply Flash memories Features • Supply voltage – VDD = 2.7 V to 3.6 V for Program, Erase and Read – VDDQ = VDDQIN = 2.4 V to 3.6 V for I/O buffers – VPP = 12 V for Fast Program (optional)


    Original     		M58BW016DB M58BW016DT M58BW016FT M58BW016FB PDF

    M58BW016

    Contextual Info: M58BW016DB M58BW016DT M58BW016FT M58BW016FB 16 Mbit 512 Kbit x 32, boot block, burst 3 V supply Flash memories Features Supply voltage – VDD = 2.7 V to 3.6 V for program, erase and read – VDDQ = VDDQIN = 2.4 V to 3.6 V for I/O buffers – VPP = 12 V for fast program (optional)


    Original     		M58BW016DB M58BW016DT M58BW016FT M58BW016FB M58BW016 PDF

    Q002

    Abstract: M58BW016DB M58BW016DT M58BW016FB M58BW016FT PQFP80 56MHZ M58BW016
    Contextual Info: M58BW016DB M58BW016DT M58BW016FT M58BW016FB 16 Mbit 512 Kb x 32, boot block, burst 3 V supply Flash memories Features • Supply voltage – VDD = 2.7 V to 3.6 V for Program, Erase and Read – VDDQ = VDDQIN = 2.4 V to 3.6 V for I/O buffers – VPP = 12 V for Fast Program (optional)


    Original     		M58BW016DB M58BW016DT M58BW016FT M58BW016FB PQFP80 Q002 M58BW016DT M58BW016FB PQFP80 56MHZ M58BW016 PDF

    Q002

    Abstract: M58BW016DB M58BW016DT M58BW016FB M58BW016FT PQFP80
    Contextual Info: M58BW016DB M58BW016DT M58BW016FT M58BW016FB 16 Mbit 512 Kbit x 32, boot block, burst 3 V supply Flash memories Features • Supply voltage – VDD = 2.7 V to 3.6 V for program, erase and read – VDDQ = VDDQIN = 2.4 V to 3.6 V for I/O buffers – VPP = 12 V for fast program (optional)


    Original     		M58BW016DB M58BW016DT M58BW016FT M58BW016FB PQFP80 Q002 M58BW016DT M58BW016FB PQFP80 PDF