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M58BW016FT Datasheets (2)

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Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
M58BW016FT		STMicroelectronics	16 Mbit (512 Kb x 32, boot block, burst) 3 V supply Flash memories	Original	PDF	522.21KB	69
M58BW016FT7T3FT		Numonyx	16 Mbit (512 Kbit x 32, boot block, burst) 3 V supply Flash memories	Original	PDF	1.3MB	70

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Micron Technology Inc


Micron Technology Inc M58BW016FT7ZA3F Flash Memory
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Vyrian	M58BW016FT7ZA3F		6,684			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Micron Technology Inc M58BW016FT7T3FT Flash, 512KX32, 70ns, PQFP80
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Vyrian	M58BW016FT7T3FT		5,857			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Micron Technology Inc M58BW016FT8T3T Flash, 512KX32, 80ns, PQFP80
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Vyrian	M58BW016FT8T3T		5,727			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Micron Technology Inc M58BW016FT7T3T Flash Memory
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Vyrian	M58BW016FT7T3T		5,700			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Micron Technology Inc M58BW016FT8ZA3FT Flash, 512KX32, 80ns, PBGA80
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Vyrian	M58BW016FT8ZA3FT		5,684			1 - 10 - 100 - 1000 - 10000 -	Get Quote

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M58BW016FT Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: M58BW016DB M58BW016DT M58BW016FT M58BW016FB 16 Mbit 512Kb x32, Boot Block, Burst 3V supply Flash memories Feature summary • Supply voltage – VDD = 2.7V to 3.6V for Program, Erase and Read – VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers – VPP = 12V for Fast Program (optional)	Original	M58BW016DB M58BW016DT M58BW016FT M58BW016FB 512Kb 56MHz	PDF
Contextual Info: M58BW016DB M58BW016DT M58BW016FT M58BW016FB 16 Mbit 512Kb x32, Boot Block, Burst 3V supply Flash memories Feature summary • Supply voltage – VDD = 2.7V to 3.6V for Program, Erase and Read – VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers – VPP = 12V for Fast Program (optional)	Original	M58BW016DB M58BW016DT M58BW016FT M58BW016FB 512Kb 56MHz	PDF
M58BW016 Abstract: Q002 M58BW016DB M58BW016DT M58BW016FB M58BW016FT PQFP80 Contextual Info: M58BW016DB M58BW016DT M58BW016FT M58BW016FB 16 Mbit 512Kb x32, Boot Block, Burst 3V supply Flash memories Features • Supply voltage – VDD = 2.7V to 3.6V for Program, Erase and Read – VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers – VPP = 12V for Fast Program (optional)	Original	M58BW016DB M58BW016DT M58BW016FT M58BW016FB 512Kb 56MHz PQFP80 M58BW016 Q002 M58BW016DT M58BW016FB PQFP80	PDF
Contextual Info: M58BW016DB M58BW016DT M58BW016FT M58BW016FB 16 Mbit 512 Kbit x 32, boot block, burst 3 V supply Flash memories Features • Supply voltage – VDD = 2.7 V to 3.6 V for program, erase and read – VDDQ = VDDQIN = 2.4 V to 3.6 V for I/O buffers – VPP = 12 V for fast program (optional)	Original	M58BW016DB M58BW016DT M58BW016FT M58BW016FB PQFP80	PDF
Contextual Info: M58BW016DB M58BW016DT M58BW016FT M58BW016FB 16 Mbit 512 Kb x 32, boot block, burst 3 V supply Flash memories Features • Supply voltage – VDD = 2.7 V to 3.6 V for Program, Erase and Read – VDDQ = VDDQIN = 2.4 V to 3.6 V for I/O buffers – VPP = 12 V for Fast Program (optional)	Original	M58BW016DB M58BW016DT M58BW016FT M58BW016FB	PDF
M58BW016 Contextual Info: M58BW016DB M58BW016DT M58BW016FT M58BW016FB 16 Mbit 512 Kbit x 32, boot block, burst 3 V supply Flash memories Features Supply voltage – VDD = 2.7 V to 3.6 V for program, erase and read – VDDQ = VDDQIN = 2.4 V to 3.6 V for I/O buffers – VPP = 12 V for fast program (optional)	Original	M58BW016DB M58BW016DT M58BW016FT M58BW016FB M58BW016	PDF
Q002 Abstract: M58BW016DB M58BW016DT M58BW016FB M58BW016FT PQFP80 56MHZ M58BW016 Contextual Info: M58BW016DB M58BW016DT M58BW016FT M58BW016FB 16 Mbit 512 Kb x 32, boot block, burst 3 V supply Flash memories Features • Supply voltage – VDD = 2.7 V to 3.6 V for Program, Erase and Read – VDDQ = VDDQIN = 2.4 V to 3.6 V for I/O buffers – VPP = 12 V for Fast Program (optional)	Original	M58BW016DB M58BW016DT M58BW016FT M58BW016FB PQFP80 Q002 M58BW016DT M58BW016FB PQFP80 56MHZ M58BW016	PDF
Q002 Abstract: M58BW016DB M58BW016DT M58BW016FB M58BW016FT PQFP80 Contextual Info: M58BW016DB M58BW016DT M58BW016FT M58BW016FB 16 Mbit 512 Kbit x 32, boot block, burst 3 V supply Flash memories Features • Supply voltage – VDD = 2.7 V to 3.6 V for program, erase and read – VDDQ = VDDQIN = 2.4 V to 3.6 V for I/O buffers – VPP = 12 V for fast program (optional)	Original	M58BW016DB M58BW016DT M58BW016FT M58BW016FB PQFP80 Q002 M58BW016DT M58BW016FB PQFP80	PDF