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    TBHK Datasheets (1)

    Thomas & Betts
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    TBHK267
    		Thomas & Betts CABLE ACCESSORIES HARDWARE KIT Original PDF 488.68KB 14
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    Phoenix Contact MSTBHK 2,5/10-G

    Tb, Pluggable, Mstbhk 2,5/10-G; |Phoenix Contact MSTBHK 2,5/10-G (Alternate Part Number: 4017918031770
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    Phoenix Contact 1765768 (UMSTBHK 2 5/10-G)

    DIN RAIL CONNECTOR SCREW 5MM 12AWG 320V 12A 10 POSITION COMBICON UMSTBHK SERIES
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    RS 1765768 (UMSTBHK 2 5/10-G) Bulk 406 6 Weeks 1
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    Phoenix Contact 1765085 (MSTBHK 2 5/10-G)

    DIN RAIL CONNECTOR SCREW 5MM 12AWG 320V 12A 10 POSITION COMBICON MSTBHK SERIES
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    Phoenix Contact 1765030 (MSTBHK 2 5/10-G-5 08)

    DIN RAIL SCREW 5.08MM 12AWG 320V 12A 10 POSITION COMBICON MSTBHK SERIES
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    Phoenix Contact 1834657 (UMSTBHK 2 5/10-G BD:1-10)

    DIN RAIL CONNECTOR SCREW 5MM 12AWG 320V 12A 10 POSITION COMBICON CONTROL SERIES
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    RS 1834657 (UMSTBHK 2 5/10-G BD:1-10) Bulk 7 Weeks 50
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    TBHK Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    transistor 2N 5551

    Abstract: P62H 2N 5551 datasheet TBA 2800
    Contextual Info: M58LW064A M58LW064B 64 Mbit 4Mb x16 or 2Mb x32, Uniform Block 3V Supply Flash Memories PRELIMINARY DATA • WIDE x16/x32 DATA BUS for HIGH BANDWIDTH – M58LW064A x16 DATA BITS 86 – M58LW064B x16/x32 DATA BITS ■ SUPPLY VOLTAGE 1 – VCC = 2.7V to 3.6V Supply Voltage


    Original     		m58lw064am58lw064bx16/x32tsop56+7tsop86pqfp80lbga54transistor 2n 5551p62h2n 5551 datasheettba 2800 PDF

    M58BW016xB

    Abstract: M58BW016BB M58BW016BT M58BW016DB M58BW016DT PQFP80
    Contextual Info: M58BW016BT, M58BW016BB M58BW016DT, M58BW016DB 16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories PE4FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VDD = 2.7V to 3.6V for Program, Erase and Read – VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers


    Original     		m58bw016btm58bw016bbm58bw016dtm58bw016db+7512kb100ns56mhzpqfp80m58bw016blbga80m58bw016xb PDF

    Contextual Info: M58BW016DB M58BW016DT 16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VDD = 2.7V to 3.6V for Program, Erase and Read – VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers – VPP = 12V for fast Program (optional)


    Original     		m58bw016dbm58bw016dt512kb56mhz PDF

    la 7913

    Abstract: JESD97 M58BW016D M58BW016DB M58BW016DT PQFP80 00005H
    Contextual Info: M58BW016DB M58BW016DT 16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VDD = 2.7V to 3.6V for Program, Erase and Read – VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers – VPP = 12V for fast Program (optional)


    Original     		m58bw016dbm58bw016dt512kb56mhz+5la 7913jesd97m58bw016dpqfp8000005h PDF

    Q002

    Abstract: JESD97 M58BW016D M58BW016DB M58BW016DT PQFP80 13-May-2003 tbhk M58BW016DB7 8835h
    Contextual Info: M58BW016DB M58BW016DT 16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories Feature summary • Supply voltage – VDD = 2.7V to 3.6V for Program, Erase and Read – VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers – VPP = 12V for Fast Program (optional)


    Original     		m58bw016dbm58bw016dt512kb56mhz+8q002jesd97m58bw016dpqfp8013-may-2003tbhkm58bw016db78835h PDF

    tbhk

    Abstract: ZTX 151 ScansU9X21
    Contextual Info: 605n 0Ä - n e H T 0 a Triode-pentode TpH TpHOÄ-neHTOfl 60511 npeflHa3HaqeH Tbl B Ö JIO K aX K a flp O B O H p a 3 B epT K H pa6o- rjiü T e J ie B H 3 HOHHbIX npHeMHHKOB IUHpOKOrO IIpHMeHeHHH. T pH O fl-neH TO fl 60511 B b in y c K a e T c n TIOpHOM 0 } 0pM JieH H H , B CTeKJIHHHOM


    OCR Scan     		harpy30ktbhkztx 151scansu9x21 PDF

    M58BW016BB

    Abstract: M58BW016BT M58BW016DB M58BW016DT PQFP80
    Contextual Info: M58BW016BT, M58BW016BB M58BW016DT, M58BW016DB 16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories PE4FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VDD = 2.7V to 3.6V for Program, Erase and Read – VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers


    Original     		m58bw016btm58bw016bbm58bw016dtm58bw016db+6512kb100ns56mhzpqfp80m58bw016blbga80 PDF

    M58LW128A

    Abstract: M58LW128B TSOP56 A23B
    Contextual Info: M58LW128A M58LW128B 128 Mbit 8Mb x16 or 4Mb x32, Uniform Block, Burst 3V Supply Flash Memories PRELIMINARY DATA FEATURES SUMMARY • WIDE DATA BUS for HIGH BANDWIDTH Figure 1. Packages – M58LW128A: x16 – M58LW128B: x16/x32 ■ SUPPLY VOLTAGE – VDD = 2.7 to 3.6V core supply voltage for Program, Erase and Read operations


    Original     		m58lw128am58lw128bx16/x32tsop56+5tbga6466mhz150/25ns150nisa23b PDF

    M58BW32FB

    Abstract: Q002 PQFP80 M58BW16F M58BW16FT M58BW32F M58BW32FT
    Contextual Info: M58BW16F M58BW32F 16 or 32 Mbit x32, Boot Block, Burst 3.3V supply Flash memories Preliminary Data Features summary • Supply voltage – VDD = 2.7V to 3.6V (45ns) or VDD = 2.5V to 3.3V (55ns) – VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers ■ High performance


    Original     		m58bw16fm58bw32f75mhzpqfp80+4m58bw32fbq002m58bw16ftm58bw32ft PDF

    TSOP86

    Abstract: P62H japan 8709 M58LW064 M58LW064A M58LW064B PQFP80 TSOP56
    Contextual Info: M58LW064A M58LW064B 64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories PRODUCT PREVIEW • M58LW064A x16 organisation, ■ M58LW064B x16/x32 selectable ■ MULTI-BIT CELL for HIGH DENSITY and LOW COST ■ SUPPLY VOLTAGE 86 1 – VDD = 2.7V to 3.6V Supply Voltage


    Original     		m58lw064am58lw064bx16/x32tsop86+7tsop56150/25ns150nsp62hjapan 8709m58lw064pqfp80 PDF

    Contextual Info: M58BW016DB M58BW016DT M58BW016FT M58BW016FB 16 Mbit 512Kb x32, Boot Block, Burst 3V supply Flash memories Feature summary • Supply voltage – VDD = 2.7V to 3.6V for Program, Erase and Read – VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers – VPP = 12V for Fast Program (optional)


    Original     		m58bw016dbm58bw016dtm58bw016ftm58bw016fb+2512kb56mhz PDF

    Contextual Info: M58BW16F M58BW32F 16 or 32 Mbit x 32, boot block, burst 3.3 V supply Flash memories Preliminary Data Features • Supply voltage – VDD = 2.7 V to 3.6 V (45 ns) or VDD = 2.5 V to 3.3 V (55 ns) – VDDQ = VDDQIN = 2.4 V to 3.6 V for I/O buffers ■ High performance


    Original     		m58bw16fm58bw32f PDF

    Contextual Info: M58BW016DB M58BW016DT M58BW016FT M58BW016FB 16 Mbit 512Kb x32, Boot Block, Burst 3V supply Flash memories Feature summary • Supply voltage – VDD = 2.7V to 3.6V for Program, Erase and Read – VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers – VPP = 12V for Fast Program (optional)


    Original     		m58bw016dbm58bw016dtm58bw016ftm58bw016fb+2512kb56mhz PDF

    M58BW016

    Abstract: Q002 M58BW016DB M58BW016DT M58BW016FB M58BW016FT PQFP80
    Contextual Info: M58BW016DB M58BW016DT M58BW016FT M58BW016FB 16 Mbit 512Kb x32, Boot Block, Burst 3V supply Flash memories Features • Supply voltage – VDD = 2.7V to 3.6V for Program, Erase and Read – VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers – VPP = 12V for Fast Program (optional)


    Original     		m58bw016dbm58bw016dtm58bw016ftm58bw016fb+5512kb56mhzpqfp80m58bw016q002 PDF

    F8800h-F8FFFh

    Abstract: M58BW32FB
    Contextual Info: M58BW16F M58BW32F 16 or 32 Mbit x 32, boot block, burst 3.3 V supply Flash memories Features „ Supply voltage – VDD = 2.7 V to 3.6 V (45 ns) or VDD = 2.5 V to 3.3 V (55 ns) – VDDQ = VDDQIN = 2.4 V to 3.6 V for I/O buffers „ High performance – Access times: 45 and 55 ns


    Original     		m58bw16fm58bw32ff8800h-f8fffhm58bw32fb PDF

    Contextual Info: M58BW016DB M58BW016DT M58BW016FT M58BW016FB 16 Mbit 512 Kb x 32, boot block, burst 3 V supply Flash memories Features • Supply voltage – VDD = 2.7 V to 3.6 V for Program, Erase and Read – VDDQ = VDDQIN = 2.4 V to 3.6 V for I/O buffers – VPP = 12 V for Fast Program (optional)


    Original     		m58bw016dbm58bw016dtm58bw016ftm58bw016fb PDF

    M58BW32FB

    Abstract: M58BW32F Q002 M58BW16FB M58BW16F M58BW16FT M58BW32FT PQFP80
    Contextual Info: M58BW16F M58BW32F 16 or 32 Mbit x 32, boot block, burst 3.3 V supply Flash memories Preliminary Data Features • Supply voltage – VDD = 2.7 V to 3.6 V (45 ns) or VDD = 2.5 V to 3.3 V (55 ns) – VDDQ = VDDQIN = 2.4 V to 3.6 V for I/O buffers ■ High performance


    Original     		m58bw16fm58bw32fpqfp80m58bw32fb+4q002m58bw16fbm58bw16ftm58bw32ft PDF

    M58BW016BB

    Abstract: M58BW016BT M58BW016DB M58BW016DT PQFP80 m58bw016xb
    Contextual Info: M58BW016BT, M58BW016BB M58BW016DT, M58BW016DB 16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VDD = 2.7V to 3.6V for Program, Erase and Read – VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers


    Original     		m58bw016btm58bw016bbm58bw016dtm58bw016db+7512kb100ns56mhzpqfp80m58bw016blbga80m58bw016xb PDF

    Contextual Info: M58LW064A M58LW064B 64 Mbit 4Mb x16 or 2Mb x32, Uniform Block 3V Supply Flash Memories PRELIMINARY DATA FEATURES SUMMARY • WIDE x16/x32 DATA BUS for HIGH BANDWIDTH Figure 1. Packages – M58LW064A x16 DATA BITS – M58LW064B x16/x32 DATA BITS ■ SUPPLY VOLTAGE


    Original     		m58lw064am58lw064bx16/x32tsop56+3tbga6466mhz120/25ns PDF

    F9800h-F9FFFh

    Abstract: M58BW32FB
    Contextual Info: M58BW16F M58BW32F 16 or 32 Mbit x 32, boot block, burst 3.3 V supply Flash memories Preliminary Data Features • Supply voltage – VDD = 2.7 V to 3.6 V (45 ns) or VDD = 2.5 V to 3.3 V (55 ns) – VDDQ = VDDQIN = 2.4 V to 3.6 V for I/O buffers ■ High performance


    Original     		m58bw16fm58bw32ff9800h-f9fffhm58bw32fb PDF

    Contextual Info: M58LW064A M58LW064B 64 Mbit 4Mb x16 or 2Mb x32, Uniform Block 3V Supply Flash Memories PRELIMINARY DATA FEATURES SUMMARY • WIDE x16/x32 DATA BUS for HIGH BANDWIDTH Figure 1. Packages – M58LW064A x16 DATA BITS – M58LW064B x16/x32 DATA BITS ■ SUPPLY VOLTAGE


    Original     		m58lw064am58lw064bx16/x32tsop56+3tbga6466mhz150/25ns PDF

    M58BW016

    Contextual Info: M58BW016DB M58BW016DT M58BW016FT M58BW016FB 16 Mbit 512 Kbit x 32, boot block, burst 3 V supply Flash memories Features Supply voltage – VDD = 2.7 V to 3.6 V for program, erase and read – VDDQ = VDDQIN = 2.4 V to 3.6 V for I/O buffers – VPP = 12 V for fast program (optional)


    Original     		m58bw016dbm58bw016dtm58bw016ftm58bw016fb+1m58bw016 PDF

    M58BW016DB

    Abstract: M58BW016xB M58BW016BB M58BW016BT M58BW016DT PQFP80
    Contextual Info: M58BW016BT, M58BW016BB M58BW016DT, M58BW016DB 16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VDD = 2.7V to 3.6V for Program, Erase and Read – VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers


    Original     		m58bw016btm58bw016bbm58bw016dtm58bw016db+6512kb100ns56mhzpqfp80m58bw016bm58bw016xb PDF

    M58LV064A

    Abstract: M58LV064B TSOP56 TBGA64
    Contextual Info: M58LV064A M58LV064B 64 Mbit 4Mb x16 or 2Mb x32, Uniform Block, Burst 3V Supply Flash Memories PRELIMINARY DATA FEATURES SUMMARY • WIDE DATA BUS for HIGH BANDWIDTH Figure 1. Packages – M58LV064A: x16 – M58LV064B: x16/x32 ■ SUPPLY VOLTAGE – VDD = 3.0 to 3.6V M58LV064 core supply


    Original     		m58lv064am58lv064bx16/x32m58lv064+4tsop56tbga6466mhz150/25ns PDF