4N* DIODE Search Results

GE 4N35

Abstract: 4n35 optoisolator motorola 4n35 4N36 Control 4N35 4N35 VDE0160 VDE0832 VDE0833 C4N35
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 4N 35 4N 36 4N 37 6-Pin D IP O ptoisolators Transistor Output These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector. • • • • •

4N29

Abstract: 4N29A VDE0160 VDE0832 VDE0833 4N32-4N32A-4N33 7500 IC 14 PIN 4n32
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 4N 29 4N29A 4N30 4N 31 4N32 4N32A 4N33 6 -P in D IP O p to is o la to rs Darlington Output Each device consists o f a gallium arsenide infrared em itting diode optically coupled to a m onolithic silicon photodarlington detector.

4N24A

Abstract: 4N22A 4N23A JANTXV-4N22A
Contextual Info: Product Bulletin 4N22AJAN September 1996 optek Optically Coupled Isolators Types 4N22A , 4N23A , 4N24A , JANTX, JA N TX V -4N 22A , 4N23A , 4N 24A • TX and TXV versions are processed to Ml L-PRF-19500/486 • 1 kV electrical isolation • Base contact is provided for

Yamaha YDA

Abstract: YDA144 qfn20 power POWER AMPLIFIER CIRCUIT DIAGRAM 10000 PD25 QFN20 RB161VA-20 snubber circuit DDP 2000 Po-1230
Contextual Info: YDA144 D- 4N STEREO 2.1W Non-Clip DIGITAL AUDIO POWER AMPLIFIER •Overview YDA144 D-4N is a digital audio power amplifier IC with maximum output of 2.1W (RL=4Ω)x2ch. YDA144 has a “Pure Pulse Direct Speaker Drive Circuit” which directly drives speakers while reducing distortion of

YDA144B

Abstract: yamaha d85 YDA144B-QZ Yamaha YDA QFN20 RB161VA-20 RB550VA-30 YDA144B-PZ WL-CSP-16 YDA144
Contextual Info: YDA144B D- 4N STEREO 2.1W Non-Clip DIGITAL AUDIO POWER AMPLIFIER •Overview YDA144B D-4N is a digital audio power amplifier IC with maximum output of 2.1W (RL=4Ω)x2ch. YDA144B has a “Pure Pulse Direct Speaker Drive Circuit” which directly drives speakers while reducing distortion of

4N25V

Abstract: 4N25GV 4N25VS 4N35V tcl tv 21 schematic diagram MARKING 611 OPTOCOUPLER IC AL 03 tcl tv 21" schematic diagram
Contextual Info: Temic S e m i c o n d u c t o r s 4N25V G / 4N35V(G) Series Optocoupler with Phototransistor Output Order Nos. and Classification table is on sheet 2. Description T he 4N 25V (G )/ 4N 35V (G ) series consists o f a phototransistor optically coupled to a gallium arsenide

Contextual Info: STB4NB80 N - CHANNEL 800V - 3G - 4A - TO-220/TO-220FP PowerMESH MOSFET PRELIMINARY DATA TYPE V dss STB 4N B80 S TB 4N B80FP • . . . . 800 V 800 V RDS on 3.3 3.3 a a Id 4 A 4 A TYPICAL RDS(on) = 3 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED

Contextual Info: SGS-THOMSON RfflD01ñ!<s [l[L[ie,ü’[KÍ@RDD S$ STP4NB50 STP4NB50FP N - CHANNEL ENHANCEMENT MODE _ PowerMESH MOSFET PRELIMINARY DATA TYPE STP 4N B50 S TP 4N B50FP V dss R d S( o i i ) Id 500 V 500 V < 2.8 Q. < 2.8 Q. 3.8 A 2.5 A • TYPICAL RDS(on) =2.5

Contextual Info: S T P 4 N 100 S T P 4 N 100 FI ¿57 S G S -T H O M S O N ¡m e ra « N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E S TP 4N 100 S TP 4N 100FI V dss RDS on Id 1000 V 1000 V < 3 .5 Q. < 3 .5 Q. 4 A 2.2 A TYPICAL RDS(on) = 3.1 Q. AVALANCHE RUGGED TECHNOLOGY

M4N35

Contextual Info: MOTOROLA Order this document by M4N35/D SEMICONDUCTOR TECHNICAL DATA TO UL CSA SETI BABT 6-Pin DIP Optoisolators Transistor Output The M 4N 35 device consists of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector.

RSS214

Abstract: HB 2 relay HB relay EM05 Led-Diode data 6-24Vdc Led-Diode M41R DC M7* DIODE Philips Varistor
Contextual Info: Accessories - Miniature power relay Sockets and Accessories Sockets - ES15 series 1. Function Plug-in sockets for mounting miniature power relays series RM all Sockets and RA (ES15/4N only) on DIN-Rail TS 35. Complementary plug-in slot for additional modules and retaining clip.

IRHQ7110

Abstract: IRHQ8110 IRHQ3110 IRHQ4110 12V 30A diode
Contextual Info: PD - 93785 IRHQ7110 100V, 4N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT LCC-28 RAD-Hard HEXFET MOSFET TECHNOLOGY Product Summary Part Number Radiation Level IRHQ7110 100K Rads (Si) RDS(on) 0.6Ω ID 3.0A IRHQ3110 300K Rads (Si) 0.6Ω 3.0A

Contextual Info: STB4NB50 N - CHANNEL 500V - 2.5Û - 3.8A - D2PAK/I2PAK _ PowerMESH MOSFET PRELIMINARY DATA TYPE V dss R dS oii Id STB 4N B50 500 V < 2.8 a 3.8 A • . . . . TYPICAL R D S (on) = 2.5 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED

EL 4N25

Abstract: H904
Contextual Info: Temic 4N25/ 4N26/ 4N27/ 4N28 S e m i c o n d u c t o r s Optocoupler with Phototransistor Output Description T he 4N 25/ 26/ 27/ 28 consist of a phototransistor optically coupled to a gallium arsenide infrared-em itting diode in a 6-Iead plastic dual inline package.

9532440000

Abstract: 1608510000 1011100000 1674300000 1608640000 weidmuller fuse 1608670000 WDK 4N 1745400000 7910180000
Contextual Info: W-SERIES DUAL-LEVEL/BRANCH TERMINALS • ■ ■ ■ Double-level feed through Compact design Pluggable jumpers Rated at 600 V, 27 A, 22.10 AWG Description Part No. WDK 2.5N WDK 2.5NV 1041600000 1041610000 Description WDK 4N WDK 4NV Part No. 1041900000 1041910000

13MM

Abstract: PH1819-4N v6 4n diode
Contextual Info: an AMP comoanv Wireless Bipolar Power Transistor, 1.78 - 1.90 GHz 4W PH1819-4N v2.00 Features ,975 .‘24 77, NPN Silicon Microwave Power Transistor Designed for Linear Amplifier Applications Class AB: -34 dBc Typ 3rd IMD at 4 Watts PEP Class A: +44 dBm Typ 3rd Order Intercept Point

G3VM-401B

Abstract: G3VM-401E
Contextual Info: MOS FET Relays G3VM-401B/E New Series of Analog-switching MOS FET Relays with Dielectric Strength of 2.5 kVAC between I/O Using Optical Isolation. • Switches minute analog signals. • Leakage current of 1 µA max. when output relay is open. • Upgraded G3VM-4N Series.

Contextual Info: MOTOROLA Order this document by MMSF4N01HD/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M M S F 4N 01H D Medium Power Surface Mount Products Motorola Preferred Device TMOS Single N-Channel Field Effect Transistors MiniMOS™ devices are an advanced series of power MOSFETs

Contextual Info: ^ . VN03E Supertex inc N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices Order Number / Package b v dss / R d s <o n ' d o n ) BVdgs (max) (min) TO-3 TO-39 TO-220 Dice1 450V 4n 2A VN0345N1 VN0345N2 VN0345N5 VN0345ND

pn junction diode

Abstract: p-n junction diode DCC010 4n90 AF27
Contextual Info: DCC010 SPICE PARAMETER PN Junction DIODE model : DIODE Parameter IS BV RS VJ FC EG KF Temp = Date : Value 4n 90 600m 600m 500m 1.11 Unit A V ohm V eV default Parameter N IBV CJO M TT XTI AF 27 deg 2008/3/26 *Information herein is for example only ; It is not guaranteed for volume production.

G3VM-XNF

Abstract: G3VM-xn 12 volt 5 pin relay data sheet K112-E1-1 5 pin relay data sheet 6pin ac and dc circuit diagram circuit diagram of relay 6 pin circuit diagram of relay 8 pin mos relay
Contextual Info: G3VMXN F /4N(F) MOS FET Relay SSR for Switching Analog Signals, with an I/O Dielectric Strength of 2.5 kVAC Using Optical Isolation Switches minute analog signals. Linear voltage and current characteristics. Switches AC and DC. Low ON-resistance. Current leakage less than 1 µA between output

Contextual Info: STN4NE03L N - CHANNEL 30V - 0.037^ - 4A - SOT-223 STripFET POWER MOSFET TYP E V S TN 4N E03L dss 30 V R D S o n Id < 0 .0 5 Q. 4 A . TYPICAL Ros(on) =0.037 £2 . EXCEPTIONAL dv/dt CAPABILITY . AVALANCHE RUGGED TECHNOLOGY . 100% AVALANCHE TESTED . APPLICATION ORIENTED

Contextual Info: RECTIFIER DIODES, Standard Recovery, Plastic Package ISI P a rt N um ber M axim um R ectified Current at T. Peak in ve rse Voltage I A m ps i f i l i Ptv (Veits) Average 1194001 50 1N 4002 100 4N 4003 200 1N 4004 400 75 1194000 600 1N 4006 800 i „ « (A m ps)

VN0808

Contextual Info: LJ Supertex. f f i c V N 0808 . N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information b v dss/ Order Num ber / Package D D SiO N ) ^D ON) b v dgs (max) (min) TO-92 80V 4n 1.5A VN0808L Features Advanced DMOS Technology □ Free from secondary breakdown