4N* DIODE Search Results

4N37A

Abstract: 4n36 PE-50 N364
Contextual Info: YtHLdtPtyJMKtKii] electronic 4N 35 • 4N 36 • 4N 37 Creative Technologies Optically Coupled Isolators C onstruction: Emitter: GaAs IR Emitting Diode Detector: Silicon NPN Epitaxial Planar Phototransistor A pp licatio n s: Galvanically separated circuits, non-interacting switches

GE 4N35

Abstract: 4n35 optoisolator motorola 4n35 4N36 Control 4N35 4N35 VDE0160 VDE0832 VDE0833 C4N35
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 4N 35 4N 36 4N 37 6-Pin D IP O ptoisolators Transistor Output These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector. • • • • •

ac1243

Contextual Info: Ü b, „ mÊfr '¿iÊk. ''-!r ÿ S - : PHOTOTRANSISTOR OPTOCOUPLERS "•‘•Kr#3" OPTOELECIHOmCS 3 4N25 4N27 4N26 4N28 DESCRIPTION PACKAGE DIMENSIONS t The 4N 25, 4N 26 , 4N 27, and 4N 28 series of optocouplers have an NPN silicon planar phototransistor optically

Motorola 4N35

Abstract: 4n36 motorola
Contextual Info: MOTOROLA Order this document by 4N35/D SEMICONDUCTOR TECHNICAL DATA & TO VD E UL CSA ® SETI SEM K O DEMKO NEMKO BABT G lobalO ptoisolator 6-P in DIP Optoisolators Transistor Output 4N 35* 4N 36 4N 37 [C T R = 100% Min] T he 4N 35, 4N 36 and 4 N 3 7 d e vice s co n sist o f a ga llium arsenide infrared

Contextual Info: G E H PHOTOTRANSISTOR OPTOCOUPLERS OPTOELECTRONICS 1 4N25 4N27 4N26 4N28 PACKAGE DIMENSIONS DESCRIPTION The 4N 25 , 4N 26, 4N 27 , and 4 N 2 8 series of optocouplers ' t t H 6.86 MAX B10 w I Πcoupled to a gallium arsenide diode. _ i _ 8.89 8.38 have an NPN silicon planar phototransistor optically

p4n40

Abstract: rfm4n
Contextual Info: m R FM 4N 35/4N 40 R FP4N 35/4N 40 Ha r r is N-Channel Enhancement Mode Power Field Effect Transistors August 1991 Packages Features T0-204AA • 4A, 350V and 400V • r DS on = 2 n • SOA is P o w e r-D issip atio n Lim ited DRAIN SOURCE f (FLANGE) • Nanosecond S w itching Speeds

a4n25

Abstract: C1681 C1685 C1682 IC07 C1685 transistor transistor c1684 TRANSISTOR C1685 Control 4N25 4N26
Contextual Info: [ s O PHOTOTRANSISTOR OPTOCOUPLERS OPTOELECTRONICS 4N25 4N27 4N26 4N28 PACKAGE DIMENSIONS DESCRIPTION ft Æ Æ T h e 4N25, 4N26, 4N 27, and 4N 28 se rie s of op tocouplers have an NPN silicon planar phototransistor optically co u pled to a gallium arsen id e diode.

4N29

Abstract: 4N29A VDE0160 VDE0832 VDE0833 4N32-4N32A-4N33 7500 IC 14 PIN 4n32
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 4N 29 4N29A 4N30 4N 31 4N32 4N32A 4N33 6 -P in D IP O p to is o la to rs Darlington Output Each device consists o f a gallium arsenide infrared em itting diode optically coupled to a m onolithic silicon photodarlington detector.

4N24A

Abstract: 4N22A 4N23A JANTXV-4N22A
Contextual Info: Product Bulletin 4N22AJAN September 1996 optek Optically Coupled Isolators Types 4N22A , 4N23A , 4N24A , JANTX, JA N TX V -4N 22A , 4N23A , 4N 24A • TX and TXV versions are processed to Ml L-PRF-19500/486 • 1 kV electrical isolation • Base contact is provided for

Yamaha YDA

Abstract: YDA144 qfn20 power POWER AMPLIFIER CIRCUIT DIAGRAM 10000 PD25 QFN20 RB161VA-20 snubber circuit DDP 2000 Po-1230
Contextual Info: YDA144 D- 4N STEREO 2.1W Non-Clip DIGITAL AUDIO POWER AMPLIFIER •Overview YDA144 D-4N is a digital audio power amplifier IC with maximum output of 2.1W (RL=4Ω)x2ch. YDA144 has a “Pure Pulse Direct Speaker Drive Circuit” which directly drives speakers while reducing distortion of

4N60

Abstract: 4N60S ssp4n50 40 gd 4n mosfet 4n60
Contextual Info: SSP4N 55/4N 60 SSH4N55/4N 60 N-CHANNEL POWER MOSFETS FEATURES • • • • • • • TO-220 Lower R d s <o n Improved inductive ruggedness Fast switching tim es Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area

4N2S

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA «1 <0. <§> ® ® ® VDE UL CSA SETI SEMKO DEMKO NEMKO SABT GlobelOptolsolator 6-Pin DIP Optolsolators Transistor Output 4N 25* 4N25A* 4N 26* 4N27 4N28 [CTR s 20% Min] The 4N25/A, 4N26, 4N27 and 4N28 devices consist of a gallium arsenide

PS2010

Abstract: 4N25-4N28 4N25 4N28 H11A1 H11A2 H11A5 IF-50
Contextual Info: N E C E L E C TR ON IC S INC 30E D Lj4575S5 0 0 2 ^ 4 4 0 • PHOTO COUPLER PS2010 PHOTO COUPLER D ESCRIPTIO N The PS2010 is an optically coupled isorator containing a GaAs light emitting diode and an NPN silicon photo transistor. PS2010 all rank : MCT2, H11A2 ~ H 1 1 A 5, 4N 25~4N 28

DIGITAL AUDIO POWER AMPLIFIER

Contextual Info: YDA144 D- 4N STEREO 2.1W Non-Clip DIGITAL AUDIO POWER AMPLIFIER •Overview YDA144 D-4N is a digital audio power amplifier IC with maximum output of 2.1W (RL=4Ω)x2ch. YDA144 has a “Pure Pulse Direct Speaker Drive Circuit” which directly drives speakers while reducing distortion of

4N25V

Abstract: 4N25GV 4N25VS 4N35V tcl tv 21 schematic diagram MARKING 611 OPTOCOUPLER IC AL 03 tcl tv 21" schematic diagram
Contextual Info: Temic S e m i c o n d u c t o r s 4N25V G / 4N35V(G) Series Optocoupler with Phototransistor Output Order Nos. and Classification table is on sheet 2. Description T he 4N 25V (G )/ 4N 35V (G ) series consists o f a phototransistor optically coupled to a gallium arsenide

Contextual Info: STB4NB80 N - CHANNEL 800V - 3G - 4A - TO-220/TO-220FP PowerMESH MOSFET PRELIMINARY DATA TYPE V dss STB 4N B80 S TB 4N B80FP • . . . . 800 V 800 V RDS on 3.3 3.3 a a Id 4 A 4 A TYPICAL RDS(on) = 3 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED

Contextual Info: SGS-THOMSON RfflD01ñ!<s [l[L[ie,ü’[KÍ@RDD S$ STP4NB50 STP4NB50FP N - CHANNEL ENHANCEMENT MODE _ PowerMESH MOSFET PRELIMINARY DATA TYPE STP 4N B50 S TP 4N B50FP V dss R d S( o i i ) Id 500 V 500 V < 2.8 Q. < 2.8 Q. 3.8 A 2.5 A • TYPICAL RDS(on) =2.5

04n25

Abstract: 4n272
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TO VDE Ul cal ® C SA SETI SEMK0 D EM KO BS 4N 25* 4N25A * 4N 26* 4N27 4N28 BABT NEMKO 6-Pin DIP Optoisolators Transistor Output CTR = 20% Min] The 4N25/A, 4 N 2 6 ,4 N 2 7 and 4N28 devices consist of a gallium arsenide infrared

4N39T

Abstract: d4n40
Contextual Info: Optoisolator Specifications 4N39, 4N40 Optoisolator GaAs Infrared Emitting Diode and Light Activated SCR INCHES M L L IM E T E R S M IN MAX. M IN 8 38 S' S3 ? 62 PEF The 4N 39 an d 4N 40 co n sist of a g allium arsenide, infrared e m ittin g diode cou p led w ith a lig h t activ ated silico n c o n tro lled 5EiT,ri

GE 4N35

Abstract: ES1868 4N32-4N32A-4N33 GE 4N33 4N29 4N29A 4N30 4N31 4N32 4N32A
Contextual Info: G E SOLID STATE 01 D E | 3 f l 7 5 Q f l l □Ont.74 1 Optoelectronic Specifications 2$ Photon Coupled Isolator 4N29-4N29A-4N30-4N31 4N32-4N32A-4N33 — SYtTini Ga As Infrared E m itting Diode & NPN Silicon Photo-D arlington Am plifier T h e G E S o lid S ta te 4N 29 th ru 4N 33 devices co n sist o f a g allium arsen id e

TP4n100

Contextual Info: *57 SGS-THOMSON TYPE S TP 4N 100 S TP 4N 100FI • . . ■ ■ . ■ S T P 4 N 1 oo S T P 4 N 1 OOFI iL iO M iQ £ I N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR V dss R DS(on) Id 1000 V 1000 V < 3.5 a < 3.5 a 4 A 2.2 A TYPICAL Ros(on) = 3.1 AVALANCHE RUGGED TECHNOLOGY

MTP4N05L

Abstract: mtp4n05
Contextual Info: MOTOROLA SEM ICO NDUCTOR TECHNICAL DATA M TP 4N 05L M TP 4N 06L Designer's Data Sheet P o w e r Field E ffe c t T ra n sisto r IM-Channel Enhancem ent-M ode S ilicon G ate TM O S TM O S POWER FETs LOGIC LEVEL 4 AMPERES These Logic Level TM O S Power FETs are designed fo r high

Opto-isolator

Contextual Info: Optoisolator Specifications 4N29, 4N29A, 4N30, 4N31, 4N32, 4N32A, 4N33 Optoisolator GaAs Infrared Emitting Diode and NPN Silicon Photo-Darlington Amplifier T he 4N 29 th ro u g h 4N 33 d evices c o n sis t o f a g a lliu m a rsen id e infrared e m ittin g dio d e co u p le d w ith a silic o n p h o to -D a rlin g to n am p lifier in a

Contextual Info: S T P 4 N 100 S T P 4 N 100 FI ¿57 S G S -T H O M S O N ¡m e ra « N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E S TP 4N 100 S TP 4N 100FI V dss RDS on Id 1000 V 1000 V < 3 .5 Q. < 3 .5 Q. 4 A 2.2 A TYPICAL RDS(on) = 3.1 Q. AVALANCHE RUGGED TECHNOLOGY