4BFLB22B Search Results

1XFH12n100

Abstract: transistor 13n80
Contextual Info: MbE D • 4bflb22b G O D D E S S 4 HIXY I X Y S CORP T - l V l S □IXYS Data Sheet No. 91532A October 1991 HiPerFET POWER MOSFETs N-Channel, High dv/dt, Low trr, HDMOS™ Fam ily C haracteristics Features * Low RDS{on HDMOS™ Process • Rugged Polysilicon Gate Ceil Structure

10M45s

Abstract: 10M45
Contextual Info: f lIY V Ç High Voltage Current Regulators Current Regulator BV D S * D P min. typ. V mA TO-220 AB 1 2 Non switchable regulators 350 Switchable regulators 450 TO-252 AA (D -P A K ^ ^ ^ ^ 10M35 20M35 35M35 100M35 IXCU IXCU IXCU IXCU 10M35S 20M35S 35M35S

t02-40

Contextual Info: DIXYS Thyristor Modules Thyristor/Diode Modules MCC 56 MCD 56 TRMS TAVM = 2x100 A = 2 x 64 A V RRM = 800 -1800 V T0-240 AA V RSM V VDSM VDRM V V Version 1 B Version 8 B Version 8 B 900 1300 1500 1700 1900 800 1200 1400 1600 1800 MCC MCC MCC MCC MCC MCC MCC

Contextual Info: ISOSMART Half Bridge Driver Chipsets Type Description Package IXBD4410PI IXBD4411 PI Full-Feature Low-Side Driver Full-Feature High-Side Driver 16-Pin P-DIP 16-Pin P-DIP -40 to +85°C -40 to +85°C • IXBD441 OSI IXBD4411SI Full-Feature Low-Side Driver

Contextual Info: □IXYS IXSH/IXSM 35N100A High speed IGBT VC ES I C 25 V C E sat = 1000 V = 70 A = 3.5 V Short Circuit SOA Capability Sym bol T est C onditions v CES T j = 25°C to 150°C 1000 V V CGR T0 = 25°C to 150°C; RGE = 1 Mi2 1000 V V GES C ontinuous +20 V V GEM

Contextual Info: □IXYS Preliminary data IXGH22N50BU1 IXGH22N50BU1S HiPerFAST IGBT with Diode V CES 500 V 44 A 2.1 V 55 ns ^C 25 V CE(sat)typ Combi Pack ^fi(typ) ?C G f| TO-247 SMD* Symbol Test Conditions V VCGH Ta= 25°C to 150°C v oE Maximum Ratings m T,J = 25°C to 150°C; FU

Contextual Info: Low VCE sat IGBT with Diode High speed IGBT with Diode IXGH17N100U1 IXGH17N100AU1 v CES ^C25 V * CE(sat) 1000 V 1000 V 34 A 34 A 3.5 V 4.0 V Combi Packs Symbol Test Conditions v CES v CGR v GES v’ Td =25°C to ^ = 25°C to 150°C; Maximum Ratings 150°C

SAA 1041

Contextual Info: IXGB16N60R2 VCES IC25 Dual Independent IGBTs and Diodes in Power SIP V CE sat = 600 V = 16 A = 2.5 V Power SIP Advanced data Maximum Ratings Symbol Test Conditions vCES vCGR vGES vGEM Tj = 25°C to 150°C *C25 ^C60 u ^CM Tc = 25°C 16 Tc = 60°C 12 SSOA (RBSOA)

Contextual Info: 4bfibE2b OOO lbbl 7bl *IXY QIXYS MCC44 lTAV=2 x 49 A MCD44 vRRM= 400-1800 V Thyristor Modules Thyristor/Diode Modules > > > 500 700 900 1300 1500 1700 1900 400 600 800 1200 1400 1800 1800* Ii V r*m Vo«, V Type Version 1 B MCC44-06ÌO1 MCC44-08ÌO1 MCC44-12io1

Contextual Info: DIXYS Thyristor Modules Thyristor/Diode Modules MCC 132 iTRUS = 2 x 300 A MCD132 lT,VM = 2 x 130A V =800-1800 V TAVM rrm V RSM V FIRM Type V DSM V DRM V V Version 1 Version 1 900 1300 1500 1700 1900 800 1200 1400 1600 1800 MCC MCC MCC MCC MCC MCD MCD MCD MCD

IXSE502

Contextual Info: HbflbSBb DDG13flb 3 ^ • IXY □ IXYS Data Sheet No. 915502A July 1993 SHAFT ENCODER PERIPHERAL INTERFACE IXSE502 Features Direct two-channel Quadrature Inputswith Schmitt Trigger Circuitry X4 Quadrature Detection for High Resolution EXTERNAL EVENT Detection and Latching for

Contextual Info: □IXYS ISOSMART IGBT Module VIE100-12S4 lc =100 A VCES = 1200 V Intelligent Power Module IPM with integrated galvanic isolation interface High Short Circuit SOA Capability Preliminary data Symbol Test Conditions Maximum Ratings v CES Tj = 25°C to 150°C

Contextual Info: n ix Y S ' High Power Diode Modules MDD 142 lFRMS =2x300A iFAVM =2x165 a VRRM =800-1800 V ^RSM ^RRM Type 900 1300 1500 1700 1900 800 1200 1400 1600 1800 MOD MDD MDD MDD MDD Symbol ^FRMS ^FAVM ^FSM Jpdt 142-08N1 142-12N1 142-14N1 142-16N1 142-18N1 Test Conditions_ Maximum Ratings

LT 0216 diode

Abstract: 20/LT 0216 diode diode bridge LT 405
Contextual Info: DIXYS MCC 255 MCD 255 Thyristor Modules Thyristor/Diode Modules ^TRMS ^TAVM V RRM V RSM V RRM VDSM v DRM V V 1300 1500 1700 1900 1200 1400 1600 1800 Symbol Test Conditions ^TRMS’ ^FRMS T VJ - T VJM Tc = 85°C; 180° sine ^TAVM’ ^FAVM ^TSM’ ^FSM Ji2dt

Contextual Info: □IX Y S Prelim inary data IXGK80N60A HiPerFAST IGBT VCES IC25 VCE sat 600 V 80 A 2.7 V 275 ns t,i « Symbol Test Conditions V CES Tj = 25°C to 150°C 600 V V CGR Tj = 25°C to 150°C; RGE = 1 Mi2 600 V V GES Continuous +20 V V GEM Transient ±30 V Maximum Ratings

1.8 degree bipolar stepper motor

Contextual Info: High Performance Dual PWM Microstepping Controller Type Package Temperature Range IXMS150 PSI 24-Pin Skinny DIP -40°C to +85°C racy, the IXMS150 will allow a designer to implement a control system with a resolution in excess of 250 microsteps per step, or 50,000 steps per revolution

Contextual Info: 4bôb52b 0001^43 M'I'î B I X Y VI0400-12S Advanced Technical Information Hybrid IGBT Power Modules S ym bol C o n d itio n vCES vGES T s = 2 5°C VCE = 1200V lC25 = 475A M ax. R ating 1200 V ±30 V ^C25 T s = 25°C 475 A ^C6S T s = 65°C 375 A 'cm T s = 25°C , 1 ms

P610T

Contextual Info: S fii Bus Compatible Digital PWM Controller, IXDP 610 Description The IXDP610 Digital Pulse Width Modulator DPWM is a programmable CMOS LSI device which accepts digital pulse width data from a microprocessor and generates two complementary, non-overlapping, pulse width modula­

IXTH13P20

Abstract: 2n7100 IXTP2P50 MOSFET IRF460 irf460 to-247 IXTM10P50 IXTM11P50 IXTP4N100A 2n7103 irf460
Contextual Info: I X Y S CORP 1ÔE D • 4böb52b QQODSbl S ■ f JIGH VOLTAGE POWER MOSFETs The IXYS family of high voltage Nand P-channel Power MOSFETs is designed to provide superior per­ formance and ruggedness in high voltage switching applications. In addition, they are directly com­

AX 1668 F

Abstract: AX 1668 F 24 pin AX+1668+F+24+pin
Contextual Info: I 10E X Y S CORP D I 4bflb-22t. 00DG3Û1 3 I □IXYS ADVANCED TECHNICAL DATA SHEET* .TM M O SBLO C MAXIMUM RATINGS DATA SHEET NO. 41010B IXGQ75N50Y4 IGBT MODULE Te = 25 °C unless otherwise Indicated Unit Symbol Value Collector-Emitter Voltage VcES 500 V

30N50A

Abstract: 30n60 to-220 30N50 30N60 IXGM30N60 IXGH30N50 IXGH30N60 IXGM30N50 wabash 30n5
Contextual Info: T T T X X W 4686226 1 I “ 01 X Y S CO RP ÏÏFj4bübridb 03E 00223 UUUUddd Y D IXGH30N50, 60 IXGM30N50, 60 t 30 AM PS, 500-600 VO LTS IXGH30N50 IXGM30N50 IXGH30N60 IXGM30N60 Unit Drain-Source Voltage 1 Vdss 500 600 Vdc Drain-Gate Voltage (Rq s = 1-OMft) (1)

LHi 978

Abstract: IXTH22P15 wabash Mosfet K 135 To3 IXTH22P20 IXTM22P15 IXTM22P20 TO-220 JEDEC XTH22P20 22p20
Contextual Info: I X Y S IDE CORP D 1 / 4 t .f lt .s a t . 5 I _ T ~ - 3 T'-JLg' □ IXYS P-CHANNEL MOSFETS IXTH22P20/ 15 IXTM22P20, 15 M A X IM U M RATING S Parameter Sym. XTH22P20 XTM22P20 IXTH22P15 IXTM22P15 Unit* Drain-Source Voltage 1) Vd s s 200 150 Vdc Drain-Gate Voltage (R q s = 1-OMfl) (1)

IXGH30N50A

Abstract: IXGH20N50A IXGP10N50A IXGH20N50 IXGH25N80A ixgh40n60 IXGP10N60A Amp. mosfet 1000 watt IXGH25N90A IXGM30N60
Contextual Info: IXYS' MOSIGBT combines the best characteristics ofPower MOSFET and bipolar devices on a single mono­ lithic chip.The MOS gated input allows the MOSIGBT to be voltage driven like a MOSFET The complexity and cost of the drive circuitiy is greatly reduced. Since the MOSIGBT uses

tt 2146 m

Abstract: tt 2146 IXGH9090
Contextual Info: EilXYS IXGH9090 HiPerFAST IGBT with Diode ^C 25 V CES V CE sat Lfi 48 A 600 V 2.7 V 400 ns T O -2 4 7 A D M a x im u m R a tin g s S ym bol T e s t C o n d itio n s VcHS T j = 2 5 'C to 1 5 0 X 600 V ^C G R T ,J = 2 5 'C to 1 5 0 X ; R b t = 1 M a 600