NCE6005AR
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NCEPOWER
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NCE6005AR is a channel enhancement mode power MOSFET with 60V drain-source voltage, 5A continuous drain current, and low on-resistance of 26mΩ typical at 10V gate-source voltage, using advanced trench technology for high efficiency in switching applications. |
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NCE6005AS
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NCEPOWER
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NCE6005AS is a channel enhancement mode power MOSFET with 60V drain-source voltage, 5A continuous drain current, and low on-resistance of 26mΩ typical at 10V gate-source voltage, suitable for high-frequency switching applications. |
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AK6005AS
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AK Semiconductor
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N-Channel Enhancement Mode Power MOSFET with 60V drain-source voltage, 5A continuous drain current, 26mΩ typical RDS(ON) at 10V VGS, and low gate charge, suitable for power switching and high-frequency applications. |
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NCE6005AN
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NCEPOWER
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NCE6005AN is a 60V, 5A N-channel enhancement mode power MOSFET with advanced trench technology, offering low RDS(ON) of 26 mΩ at VGS=10V and low gate charge, suitable for high-frequency switching applications. |
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AK6005AN
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AK Semiconductor
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N-Channel Enhancement Mode Power MOSFET AK6005AN with 60V drain-source voltage, 5A continuous drain current, RDS(ON) less than 35mΩ at VGS=10V, and low gate charge for high-efficiency switching applications. |
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AK6005AR
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AK Semiconductor
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AK6005AR N-Channel Enhancement Mode Power MOSFET with 60V drain-source voltage, 5A continuous drain current, RDS(ON) less than 35mΩ at VGS=10V, and low gate charge, suitable for power switching and high frequency applications. |
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NCE6005AR
