4BANKS Search Results

Contextual Info: M464S0424ETS PC133/PC100 SODIMM M464S0424ETS SDRAM SODIMM 4Mx64 SDRAM SODIMM based on 4Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M464S0424ETS is a 4M bit x 64 Synchronous • Performance range Dynamic RAM high density memory module. The Samsung

K4S641632E-TC75

Contextual Info: M366S0424ETS PC133/PC100 Unbuffered DIMM M366S0424ETS SDRAM DIMM 4Mx64 SDRAM DIMM based on 4Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M366S0424ETS is a 4M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung

HY57V56420T

Abstract: hy57v HY57V56420LT-8 HY57V56420LT-H HY57V56420LT-HP HY57V56420T-8 HY57V56420T-H HY57V56420T-HP HY57V56420T-P HY57V56420T-S
Contextual Info: HY57V56420 L T 4Banks x 16M x 4Bit Synchronous DRAM DESCRIPTION The HY57V56420T is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V56420 is organized as 4 banks of 16,777,216x4.

HY57V653220BTC-7

Abstract: HY57V653220B HY57V653220BTC-10 HY57V653220BTC-10P HY57V653220BTC-5 HY57V653220BTC-55 HY57V653220BTC-6 HY57V653220BTC-8
Contextual Info: HY57V653220B 4 Banks x 512K x 32Bit Synchronous DRAM DESCRIPTION The Hynix HY57V653220B is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY57V653220B is organized as 4banks of 524,288x32.

GLT5640L32

Abstract: GLT5640L32-5 G-Link
Contextual Info: G-LINK ADVANCED GLT5640L32 CMOS Synchronous DRAM 2M x 32 SDRAM 512K x 32bit x 4Banks Synchronous DRAM G-Link Technology Corporation G-Link Technology Corporation,Taiwan 6F, No. 24-2, Industry E. RD. IV, Science Based Industrial Park, Hsin Chu, Taiwan. G-Link Technology Corporation

Contextual Info: HY57V56420H L T 4 Banks x 16M x 4Bit Synchronous DRAM DESCRIPTION The HY57V56420H is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V56420H is organized as 4banks of 16,777,216x4.

HY57V56820HT

Contextual Info: HY57V56820H L T 4 Banks x 8M x 8Bit Synchronous DRAM DESCRIPTION The HY57V56820HT is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V56820HT is organized as 4banks of 8,388,608x8.

M470L1714BT0

Contextual Info: M470L1714BT0 200pin DDR SDRAM SODIMM 128MB DDR SDRAM MODULE 16Mx64 based on 8Mx16 DDR SDRAM 200pin SODIMM 64-bit Non-ECC/Parity Revision 0.1 June. 2001 Rev. 0.1 June. 2001 M470L1714BT0 200pin DDR SDRAM SODIMM Revision History Revision 0.0 (Apr. 2001) 1. First release.

HYM71V32735ALT8M-H

Abstract: HYM71V32735ALT8M-K HYM71V32735AT8M HYM71V32735AT8M-H HYM71V32735AT8M-K
Contextual Info: 32Mx72 bits PC133 SDRAM Unbuffered DIMM based on 16Mx8 SDRAM with LVTTL, 4 banks & 4K Refresh HYM71V32735AT8M Series DESCRIPTION The Hynix HYM71V32735AT8M Series are 32Mx72bits ECC Synchronous DRAM Modules. The modules are composed of eighteen 16Mx8bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 168pin

M470L3223BT0

Contextual Info: M470L3223BT0 200pin DDR SDRAM SODIMM 256MB DDR SDRAM MODULE 32Mx64 based on 32Mx 8 DDR SDRAM 200pin SODIMM 64bit Non-ECC/Parity Revision 0.1 June. 2001 Rev. 0.1 June. 2001 M470L3223BT0 200pin DDR SDRAM SODIMM Revision History Revision 0.0 (Apr. 2001) 1. First release.

HYM72V32736T8

Abstract: HYM72V32736T8-H RA12
Contextual Info: 32Mx72 bits PC133 SDRAM Unbuffered DIMM based on 32Mx8 SDRAM with LVTTL, 4 banks & 8K Refresh HYM72V32736T8 Series DESCRIPTION The Hyundai HYM72V32736T8 Series are 32Mx72bits ECC Synchronous DRAM Modules. The modules are composed of nine 32Mx8bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 168pin

Contextual Info: CMOS SDRAM K4S28163LD-RG/S 8Mx16 Mobile SDRAM 54CSP VDD/VDDQ 2.5V/1.8V or 2.5V/2.5V, TCSR & PASR Revision 1.0 February 2002 Rev. 1.0 Feb. 2002 K4S28163LD-RG/S CMOS SDRAM Revision History Revision 0.0 (December 8. 2000, Target) • First generation of 128Mb Low Power SDRAM (V DD 2.5V, VDDQ 1.8V).

Contextual Info: M377S2858AT2 SDRAM MODULE Revision History Revision 0.1 April 29, 2000 - Added the description of " Staktek’s stacking technology is Samsung’s stacking technology of choice." Rev. 0.1 Apr. 2000 M377S2858AT2 SDRAM MODULE M377S2858AT2 SDRAM DIMM (Intel 1.1 ver. Base)

Contextual Info: Preliminary Spec. MITSUBISHI LSIs Some contents are subject to change without notice. MH32S72PHH -5,-5L,-6,-6L,-7,-7L 2,329,519,104-BIT 32,354,432 - WORD BY 72-BIT Synchronous DRAM DESCRIPTION The MH32S72PHH is 32354432 - word by 72bit Synchronous DRAM module. This consists of nine

Contextual Info: 16Mx64bits PC133 SDRAM Unbuffered DIMM based on 16Mx8 SDRAM with LVTTL, 4 banks & 4K Refresh HYM71V16635HCT8R Series DESCRIPTION The Hynix HYM71V16635HCT8R Series are 16Mx64bits Synchronous DRAM Modules. The modules are composed of eight 16Mx8bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 168pin

Contextual Info: 16Mx72 bits PC100 SDRAM Registered DIMM with PLL, based on 16Mx8 SDRAM with LVTTL, 4 banks & 4K Refresh HYM71V16C755HCT8 Series DESCRIPTION The Hynix HYM71V16C755HCT8 Series are 16Mx72bits ECC Synchronous DRAM Modules. The modules are composed of nine 16Mx8bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 168pin

Contextual Info: HY5DU12422A L T HY5DU12822A(L)T HY5DU121622A(L)T 512Mb DDR SDRAM HY5DU12422A(L)T HY5DU12822A(L)T HY5DU121622A(L)T This document is a general product description and is subject to change without notice. Hynix semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.

HYM71V32635HCT8-H

Contextual Info: 32Mx64bits PC133 SDRAM Unbuffered DIMM based on 16Mx8 SDRAM with LVTTL, 4 banks & 4K Refresh HYM71V32635HCT8 Series DESCRIPTION The Hynix HYM71V32635HCT8 Series are 32Mx64bits Synchronous DRAM Modules. The modules are composed of sixteen 16Mx8bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 168pin

Contextual Info: HY5DU56422C L F HY5DU56822C(L)F HY5DU561622C(L)F 256M DDR SDRAM HY5DU56422C(L)F HY5DU56822C(L)F HY5DU561622C(L)F This document is a general product description and is subject to change without notice. Hynix semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.

Contextual Info: HY5DU28422D L T HY5DU28822D(L)T HY5DU281622D(L)T 128Mb-S DDR SDRAM HY5DU28422D(L)T HY5DU28822D(L)T HY5DU281622D(L)T This document is a general product description and is subject to change without notice. Hynix semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.

Contextual Info: PRELIMINARY DATA SHEET 256M bits SDRAM EDS2504APTA 64M words x 4 bits EDS2508APTA (32M words × 8 bits) EDS2516APTA (16M words × 16 bits) Description Pin Configurations The EDS2504AP is a 256M bits SDRAM organized as 16,777,216 words × 4 bits × 4 banks. The EDS2508

Contextual Info: HY5DU56422D L T HY5DU56822D(L)T HY5DU561622D(L)T 256M DDR SDRAM HY5DU56422D(L)T HY5DU56822D(L)T HY5DU561622D(L)T This document is a general product description and is subject to change without notice. Hynix semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.

hy5du281622dt-6

Contextual Info: HY5DU281622DT-6 128M 8Mx16 DDR SDRAM HY5DU281622DT This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied.

MA2180

Abstract: intel socket 423 pin assignments
Contextual Info: 64Mx72 bits PC100 SDRAM Registered DIMM with PLL, based on 64Mx4 SDRAM with LVTTL, 4 banks & 8K Refresh HYM72V64C756B L T4 Series DESCRIPTION The HYM72V64C756B(L)T4 -Series are high speed 3.3-Volt synchronous dynamic RAM Modules composed of eighteen 64Mx4 bit Synchronous DRAMs in 54-pin TSOPII, two 48-pin SOP Register Buffers, one 24-pin SOP PLL and 8-pin