4B75DÖ Search Results

Contextual Info: HY514100B Series •HYUNDAI 4M X 1-bit CMOS DRAM DESCRIPTION The HY514100B is the new generation and fast dynamic RAM organized 4,194,304 x 1-bit. The HY514100B utilizes Hyundai’s CM OS silicon gate process technology as well as advanced circuit techniques to provide wide

HYM536410MG

Contextual Info: HYM536410 M -Series •HYUN DAI 4M X 36-blt CMOS DRAM MODULE DESCRIPTION The HYM536410 is a 4M x 36-bit Fast page mode CMOS DRAM module consisting of eight HY5117400 in 24/28 pin SOJ and four HY514100A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22pF decoupling

Contextual Info: HY5116400A Series •{HYUNDAI 4M X 4-bit CMOS DRAM DESCRIPTION The HY5116400A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY5116400A utilizes Hyundai’s CMOS silicon gate process technology as advanced circuit techniques to provide wide operating

Contextual Info: •HYUNDAI SEMICONDUCTOR H Y 5 1 4 4 1 0 A S e r ie s 1M x 4-bit CMOS DRAM with Write-Per-Bit DESCRIPTION The HY514410A is the new generation and fast dynamic RAM organized 1,048,576 x 4-bit with function of Write-Per-Bit. The HY514410A utilizes Hyundai's CMOS silicon gate process technology as well as advanced

Contextual Info: HYUNDAI HYM532100A M-Series 1M x 32-blt CM O S DRAM MODULE DESCRIPTION The HYM532100A is a 1M x 32-bit Fast page mode CMO S DRAM module consisting of eight HY514400A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.2^uF decoupling capacitor is mounted for each DRAM.

HY53C464

Abstract: HY53C464-70 536X4 65536x4
Contextual Info: SIE D HYUNDAI ELECTRONICS • 4b7SOññ 0000SL3 32T « H Y N K MYUNDA HY53C464 SEMICONDUCTOI MK 4 liii M O* | U \ \ 1 M 121202 B-JAN 92 . FEATURES DESCRIPTION • Low power dissipation for HY53C464L — Operating Current, 100ns : 50mA (max.) — TTL Standby C u rren t: 2mA (max.)

HY628100

Contextual Info: HY 628100 S e rie s •HYUNDAI 128KX 8-bit CMOS SRAM DESCRIPTION The HY628100 is a high-speed, low power and 131,072 x 8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit

Contextual Info: HY51V17405B Series •HYUNDAI 4M x 4-bit CMOS DRAM with Burst EDO DESCRIPTION The HY51V17405B is the new generation and fast dynamic RAM organized 4,194,304x4-bit. The HY51V17405B utilized Hyundai's CMOS silicon gate process technology as well as advenced circuit techniques to prove wide

Contextual Info: HY638256 •HYUNDAI 32Kx 8-bit CMOS FAST SRAM PRELIMINARY DESCRIPTION The HY638256 is a high-speed 32,768 x 8-bits CMOS static RAM fabricated using Hyundai's high performance twin tub CMOS process technology. This high reliability process coupled with high-speed circuit design techni­

Contextual Info: mH Y II N U It I A 1 V I I U I I B I 4 M x 1 6 b it S y n c h r o n o u s D R A M S e r ie s HY57V641610/ HY57V641620/ HY57V651610/ HY57V651620 HY57V641611/ HY57V641621/ HY57V651611/ HY57V651621 PRELIMINARY DESCRIPTION HY57V641610 2Mbit X 2bank x 16 I/O, LVTTL

HY51V16404B

Abstract: HY51V16404BR60 si17 MH-750
Contextual Info: •HYUNDAI HY51V16404B Series 4M x 4-bit CMOS DRAM with Extended Data Out DESCRIPTION TheHY51V16404B is the new generation and fast dynamic RAM organizecU,194,304 x 4-bit. The HY51V16404B utilizes Hyundai’s CMOS silicon gate process technology as advanced circuit techniques to provide wide operating

Contextual Info: HY51V17400B Series •HYUNDAI 4M X 4-bit CMOS DRAM PRELIMINARY DESCRIPTION The HY51V17400B is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY 51V17400B utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide

Contextual Info: •HYUNDAI SEMICONDUCTOR HYM540400 Series 4M X 40<bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM540400 is a 4M x 40-bit Fast page mode CMOS DRAM module consisting of ten HY5116400 in 24/28 pin SOJ orTSOP-ll on a 72 pin glass-epoxy printed circuit board. 0.22/iF decoupling capacitor Is mounted for each

HY638256T1

Abstract: HY638256 AM524 HY638256J15
Contextual Info: HY638256 -HYUNDAI CMOS FAST SRAM DESCRIPTION The HY638256 is a high-speed 32,768 x 8-bits CMOS static RAM fabricated using Hyundai's high performance twin tub CMOS process technology. This high reliability process coupled with high-speed circuit design techniques, yields maximum access time of 15ns. The HY638256 has a data retention mode that guarantees

HY514100-80

Abstract: ascl2
Contextual Info: HYUNDAI ELECTRONICS BTE D • 4b75DÖÖ DDDG311 S BIHYNK PRELIMINARY ^ 4M X 1-Bit CMOS DRAM? M191200A-MAY91 -r -H ê -1 2 -ïS DESCRIPTION FEATURES • Low power dissipation - Operating Current, 100ns : 80mA max. - TTL Standby Current : 2mA(max.) - CMOS Standby Current : lmA(max.)

Contextual Info: • H Y U N D A I H Y 5 1 4 4 1 O A S e r ie s 1M x 4-bit CMOS DRAM with Write-Per-BIt DESCRIPTION The HY514410A is the 2nd generation and fast dynamic RAM organized 1,048,576 x 4-bit with function of Write-Per-Bit. TVte HY514410A utilizes Hyundai’s CMOS silicon gate process technology as well as advanced

Contextual Info: H Y 5 1 1 8 1 6 0 B • « H Y U N D A I S e r ie s 1Mx 16-bit CMOS DRAM with 2CAS DESCRIPTION The HY5118160B Is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY5118160B utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide

Contextual Info: H Y 5 1 V 4 2 6 0 B •HYUNDAI S e r ie s 256KX 16-bit CMOS DRAM with 2 CAS PRELIMINARY DESCRIPTION The HY51V4260B is the new generation and fast dynamic RAM organized 262,144 x 16-bit configuration employing advanced submicron CM OS process technology and advanced circuit design technique to achieve

Contextual Info: •HYUNDAI H Y 5 2 1 6 2 5 7 256K x S e r ie s 16-bit Video RAM with 2WE Introduction Overview The 4megabit Video RAM is an application specific memory device designed for graphics applications. It comprises a 256k x16 DRAM memory array interfaced to a 256 x16 Serial Access Memory SAM , or register.

Contextual Info: “H Y U N D A I TM I tf n U i t HY57V16801 Series 2M I X 8 bit Synchronous DRAM PRELIMINARY DESCRIPTION The HY57V16801 is a very high speed 3.3 Volt synchronous dynamic RAM organized 2,097,152x8bits, and fabricated with the Hyundai CMOS process. This dual bank circuit consists of two memories, each 1,048,576

Contextual Info: HY534256A Series “ H Y U N D A I 256KX 4-bit CMOS DRAM DESCRIPTION ITie HY534256A is the 2nd generation and fast dynamic RAM organized 262,144 x 4-bit. The HY534256A utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating

ci 28448

Contextual Info: HYUNDAI ELECTRONICS SIE D • 4b750êfl DDDDbTT b?ñ « H Y N K PRELIMINARY •HYUNDAI SEMICONDUCTOR HY534256A 2' iK 4-ill I ( M( S m m i M 1C1200A-JAN92 DESCRIPTION TheHY534256A is a high speed, low power 262,144X 4 bit CMOS dynamic random access memory. Fabricated with the HYUNDAI