4B55 Search Results

Contextual Info: 4B5545E 0015B44 DTE * I N R International 'k ?r Rectifier IR L 520S INTERNATIONAL RECTIFIER HEXFET Power MOSFET • • • • • • • PD-9.908 Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive

irkt 132 12

Contextual Info: • International SRectffier 4B55452 741 « I N R INTERNATIONAL RECTIFIER bSE D SERIES IRK.F72 FAST SCR / DIODE and SCR / SCR INT-A-PAK Power Modules Features Fast turn-off thyristor Fast recovery diode High surge capability Electrically isolated baseplate

125dc/125dc

Abstract: s1na E1017 R52KF10A 0S81 25B0
Contextual Info: 4855452 II JO R I D S T T ^ 4B55452 000801,2 3 | ~ 0e |62 Data Sheet No. PD-2.188 in t e r n a t io n a l r e c t if ie r O y~.a 3 . ^ 3 q INTERNATIONAL RECTIFIER R52KF SERIES 1200-1000 VOLTS RANGE REVERSE RECOVERY TIME 1.2//S * 1100 AMP AVG HOCKEY PUK SOFT FAST RECOVERY RECTIFIER DIODES

Contextual Info: • 4B554S2 0014^5b 070 B I N R International t » r Rectifier PD-9.647A IRF9Z24 INTERNATIONAL HEXFET Pow er M O S FE T R EC TIFIER Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel 175°C Operating Temperature Fast Switching Ease of Paralleling

Contextual Info: Integrated Device Technology, Inc* Single, double-frequency clock input 16.67MHz, 20MHz, 25M Hz and 33MHz operation 16MIPS a t2 0M H z Low cost 84-pin PLCC packaging O n-chip 4-deep write buffer elim inates memory write stalls O n-chip 4-word read buffer supports burst o r sim ple block

Contextual Info: Inte rn at io nal rectifier " 73 dF|4ü554se o o o t ,s 7 i 3 |~ r ~ 2 .5 - / ? Data Sheet No. PD-3.086 INTERNATIONAL RECTIFIER ISO PFT SERBES OQOA It GGI Gate Türn-Off Hockey Puk SCRs Major Ratings and Characteristics — • tgq 150PFT200 150PFT250 800

5566-4

Abstract: max3824
Contextual Info: P D 9 .1 6 1 5 International I R Rectifier FA38SA50 PRELIMINARY H E X F E T P o w er M O S F E T Fully Isolated Package Easy to Use and Parallel Low On-Resistance Dynamic dv/dt Rating Fully Avalanche Rated Simple Drive Requirements Low Drain to Case Capacitance

IR E78996

Abstract: 6J450 T45 diode 6H450 E78996 rectifier module E78996 diode FK 330
Contextual Info: INTERNATIONAL RECTIFIER bSE J> Wt 4ÛSS452 001b3E3 750 • INR Bulletin E27113 International IxqrIRectifier IRFK6H450,IRFK6J450 Isolated Base Power HEX-pak Assembly - Parallel Chip Configuration • • • • High Current Capability. UL recognised E78996.

Contextual Info: INTERNATIONAL RECTIFIER b5E D • MÖ55452 GD17Elb S27 M I N R PD-2.333 3o c p q o so International [?o r JRectifier 3 o c pq io o SCHOTTKY RECTIFIER 30 Amp Major Ratings and Characteristics Description/Features 30CPQ. Units lF AV Rectangular waveform 30

hf50c120

Contextual Info: International IO R Rectifier PD'2-496 H F 50C 120A C B TARGET HF50C120ACB Hexfred Die in Wafer Form 1200 V Size 50 4" Wafer Electrical Characteristics Wafer Form D e s c rip tio n P a ra m e te r G u a ra n te e d (M in /M a x ) T e s t C o n d itio n s

Contextual Info: International IOR Rectifier Data Sheet No. PD-6.030C IR2113 HIGH AND LOW SIDE DRIVER Features Product Summary • Floating channel designed for bootstrap operation Fully operational to + 600V Tolerant to negative transient voltage dV/dt immune ■ G ate drive supply range from 10 to 20 V

Contextual Info: International muRectifier P D - 9 .1 2 6 0 A IRLML5103 PRELIMINARY H E X F E T P ow er M O S F E T • • • • • • • Generation V Technology Ultra Low On-Resistance P-Channel M O SFET SO T-23 Footprint Low Profile <1.1 mm Available in Tape and Reel

Contextual Info: PD-9.1443 International l R Rectifier IRGCH50SE TARGET IRGCH50SE IGBT Die in Wafer Form 1200 V Size 5 Standard Speed 5" Wafer Electrical Characteristics Wafer Form D escription G uaranteed (Min/Max) VcE (on) Collector-to-Emitter Saturation Voltage 3.3V Max.

thyristor BT 161

Contextual Info: I . I Bulletin 127104 rev. A 09/97 International i q r Rectifier i r k . f 7 2 „ s e r ie s FAST THYRISTOR/ DIODE and THYRISTOR/THYRISTOR INT-A-pak Power Modules Features • 71 A Fast turn-off thyristor ■ Fast recovery diode ■ High surge capability

Contextual Info: P D - 9.1106 International H^lRectffier IRGBC20MD2 Short Circuit Rated Fast Copack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Short circuit rated -1 Ops @125°C, VGE = 15V • Switching-loss rating includes all "tail” losses

wiring VDG 13 relay

Abstract: IR6000 "international rectifier" ir6000 wiring VDG 14 relay driver injectors 24V 8 pins DIP relay pinout diagram R6000 DDE1363 SS452 D-6380
Contextual Info: r ì Preliminary Data Sheet 6.025 INTERNATIONAL RECTIFIER IO R IR 6 0 0 0 INTELLIGENT HIGH-SIDE □IN/IOS POWER SWITCH Avalanche Rated 60 Volts/1 OOmQ Product Summary General Description The IR6000 is a monolithic, fully self protected high side DMOS switch. Designed primarily for solenoid and

international rectifier GTO

Abstract: T120 16A ior scr it900 FULL WAVE RECTIFIER CIRCUITS with scr 500v 50a scr INTERNATIONAL RECTIFIER scr 150a gto 150PFT200 150PFT250
Contextual Info: in te rnational rectifTêr " 73 »F |4 fl ss 4s a o o o t s 7 i 3 |'r-xs-/? Data Sheet No. PD-3.086 IN T E R N A T IO N A L R E C T IF IE R TOR 1 5 0 PFT SERBES GODA I7QQ Gate Türn-Off Hockey Puk SCRs Description/Features Major Ratings and Characteristics

Contextual Info: PD-9.1429 International lö R Rectifier IRGCC30UE TARGET IRGCC30UE IGBT Die in Wafer Form 600 V Size 3 Ultra-Fast Speed 5" Wafer Electrical Characteristics Wafer Form Parameter Description Guaranteed (Min/Max) 3.3V Max. lc = 12A, T j = 25°C, V GE = 15V

THYRISTOR BST N 45 B 90

Abstract: thyristor bst m 45 90 Thyristor bst 2 HALF WAVE 45 E 57 20-C1V thyristor YS 160 004 11111I D226 diode irkt91-18 L9500 thyristor bt 3A
Contextual Info: i * fl5 5 4 5 2 International ü ^jRectifier □ O lbb'JO GOfl IIN R s e r ie s ir k . 26 , .41, .56 , .71, .91 HIGH VOLTAGE THYRISTOR/ DIODE ADD-A-pak Power Modules and THYRISTOR/ THYRISTOR Features IN T E R N A T IO N A L R E C T IF IE R • ■ E le c tric a lly iso lated b a s e plate

Contextual Info: MLX90314 Programmable Sensor Interface Features and Benefits • ■ ■ ■ ■ ■ Microprocessor-controlled signal conditioning for bridge-type sensors Suited for low-cost sensors: reduction of non-linearity by programmable coefficients External or internal temperature sensor for compensating temperature errors

Contextual Info: I O R — INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER Diod^ Thyristor 2bE D • and Triac Junctions 4355452 0010280 1 ■ 0h 0$^ T^Q ^O S * POWER SEMICONDUCTOR JUNCTIONS THE APPLICATION AND CUSTOM ASSEMBLY OF POWER SEMICONDUCTOR JUNCTIONS INTRODUCTION

Contextual Info: International IQR Rectifier PD‘2500 H F30A 060A C B TARGET HF30A060ACB Hexfred Die in Wafer Form 600 V Size 30 4" Wafer Electrical Characteristics Wafer Form Param eter V fm BV r I RM Description Guaranteed (Min/Max) Forward Voltage Test Conditions 1.8V Max.

Contextual Info: International I Q R Rectifier PD'2-498 H F 40A 060A C B TARGET HF40A060ACB Hexfred Die in Wafer Form 600 V Size 40 4" Wafer Electrical Characteristics Wafer Form P a ra m e te r D e s c rip tio n V fm BVr Forward V oltage I RM G u a ra n te e d (M in /M a x )

Contextual Info: PD - 5.025A International [iggRectifier CPV364MU IGBT SIP MODULE Ultra-Fast IGBT Features • • • • Fully isolated printed circuit board mount package Switching-loss rating includes all "tail" losses HEXFRED soft ultrafast diodes Optimized for high operating frequency over 5kHz