4B554S2 Search Results

Contextual Info: • 4B554S2 0014^5b 070 B I N R International t » r Rectifier PD-9.647A IRF9Z24 INTERNATIONAL HEXFET Pow er M O S FE T R EC TIFIER Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel 175°C Operating Temperature Fast Switching Ease of Paralleling

Contextual Info: Inte rn at io nal rectifier " 73 dF|4ü554se o o o t ,s 7 i 3 |~ r ~ 2 .5 - / ? Data Sheet No. PD-3.086 INTERNATIONAL RECTIFIER ISO PFT SERBES OQOA It GGI Gate Türn-Off Hockey Puk SCRs Major Ratings and Characteristics — • tgq 150PFT200 150PFT250 800

international rectifier GTO

Abstract: T120 16A ior scr it900 FULL WAVE RECTIFIER CIRCUITS with scr 500v 50a scr INTERNATIONAL RECTIFIER scr 150a gto 150PFT200 150PFT250
Contextual Info: in te rnational rectifTêr " 73 »F |4 fl ss 4s a o o o t s 7 i 3 |'r-xs-/? Data Sheet No. PD-3.086 IN T E R N A T IO N A L R E C T IF IE R TOR 1 5 0 PFT SERBES GODA I7QQ Gate Türn-Off Hockey Puk SCRs Description/Features Major Ratings and Characteristics

Contextual Info: International IOR Rectifier Data Sheet No. PD-6.028C IR2111 HALF-BRIDGE DRIVER Features Product Summary • Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune ■ Gate drive supply range from 10 to 20V

Contextual Info: Data Sheet No. PDh5.022A International I R Rectifier IR2130D 3-PHASE BRIDGE Features •Hermetic ■Floatingchanneldesignedforbootstrap operation Fully operational to +400V Tolerant to negative transient voltage dV/dt immune ■ Gate drive supply range from 10 to 20V

595-PH

Abstract: 30V 595PH
Contextual Info: International k ?r Rectifier HEXFET Power MOSFET • • • • PD-9.847 4655452 0015122 312 * I N R _ IR L IZ 24G INTERNATIONAL RECTIFIER b5E » Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm Logic-Level Gate Drive

Contextual Info: International S Rectifier PD 91314 IRF737LC preliminary HEXFET^ Power MOSFET • Reduced Gate Drive Requirement • Enhanced 30V V qs Rating • Reduced Ciss. Coss> C rss • Extrem ely High Frequency Operation • Repetitive Avalanche Rated Voss = 300V RDS on =

Contextual Info: Provisional Data Sheet PD 9.679C International I R Rectifier irhn725o dv/dt RATED HEXFET TRANSISTOR IRHN8250 REPETITIVE AVALANCHE AND N-CHANNEL MEGA RAD HARD Product Summary 200 Volt, 0.1 On, MEGA RAD HARD HEXFET International Rectifier’s M EG A RAD HARD technology

3s4 MARKING CODE DIODE

Abstract: IRF540NS
Contextual Info: PD -9.1342 International [^Rectifier IRF540NS PRELIMINARY HEXFET Power MOSFET • Advanced Process Technology • Surface Mount • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated Vdss= 100V ^D S o n =

D304 diode

Abstract: tr/P45/D304 diode
Contextual Info: • International ^R ectifier MÖSSM52 QQlb771 037 ■ INR INTERNATIONAL RECTIFIER b5E D SERIES IRK.F132 FAST SCR / DIODE and SCR / SCR INT-A-PAK Power Modules Features F ast tu rn -o ff th y ris to r F a s t re c o v e ry d io d e High su rg e c a p a b ility

Contextual Info: INTERNATIONAL RECTIFIER bSE D • 4ÔSSMS2 D O l ß n a GT7 ■ INR Preliminary Data Sheet No. PD-6.019 IN T E R N A T IO N A L R E C T IF IE R HIGH VOLTAGE T H R EE-P H A SE M O S GATE D R IV E R General Description Features The IR2130 is a high voltage driver for MOS-gated power

Contextual Info: 4 fi5 5 4 5 2 International i»r Rectifier SOQ M I N R PD-9.852 IRFIBC40G IN T E R N A T IO N A L HEXFET P o w e r M O S F E T • • • • • 0015250 R E C T IF IE R Isolated Package High Voltage lsolation= 2.5K VR M S Sink to Lead Creepage Dist.= 4.8mm