488AA Search Results

488AA

Abstract: MO-240A SO8FL 488AA-01
Contextual Info: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DFN5 5x6, 1.27P SO−8FL CASE 488AA−01 ISSUE E 1 SCALE 2:1 DATE 17 AUG 2010 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION D1 AND E1 DO NOT INCLUDE

4934N

Abstract: NTMFS4934N 362 N MOSFET NTMFS4934NT1G
Contextual Info: NTMFS4934N Power MOSFET 30 V, 147 A, Single N−Channel, SO−8 FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

4841NH

Abstract: mosfet 4841NH 4841N 090nh NTMFS4841NHT1G
Contextual Info: NTMFS4841NH Power MOSFET 30 V, 59 A, Single N−Channel, SO−8FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Low RG These are Pb−Free Devices

4939n

Abstract: 15AID 488A
Contextual Info: NTMFS4939N Power MOSFET 30 V, 53 A, Single N−Channel, SO−8 FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Contextual Info: NTMFS4108N Power MOSFET 30 V, 35 A, Single N−Channel, SO−8 Flat Lead Package http://onsemi.com Features • Thermally and Electrically Enhanced Packaging Compatible with • • • • Standard SO−8 Package Footprint New Package Provides Capability of Inspection and Probe After

Contextual Info: NTS8100MFS, NRVTS8100MFS Very Low Forward Voltage Trench-based Schottky Rectifier http://onsemi.com Features • Fine Lithography Trench−based Schottky Technology for Very Low • • • • • • • Forward Voltage and Low Leakage Fast Switching with Exceptional Temperature Stability

5832NL

Abstract: DFN5 1.6 PACKAGE DIMENSIONS NTMFS5832NLT1G
Contextual Info: NTMFS5832NL Power MOSFET 40 V, 111 A, 4.2 mW Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

NTMFS4833N

Abstract: NTMFS4833NT1G 4833N NTMFS4833NT3G 4833n mosfet
Contextual Info: NTMFS4833N Power MOSFET 30 V, 191 A, Single N−Channel, SO−8 FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices*

mosfet 4941n

Abstract: NTMFS4941NT1G 4941n NTMFS4941
Contextual Info: NTMFS4941N Power MOSFET 30 V, 47 A, Single N−Channel, SO−8 FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

mosfet 4925n

Abstract: 4925N BFR 965 NTMFS4925NT1G
Contextual Info: NTMFS4925N Power MOSFET 30 V, 48 A, Single N−Channel, SO−8 FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

NTMFS4121N

Abstract: NTMFS4121NT1G NTMFS4121NT3G
Contextual Info: NTMFS4121N Power MOSFET 30 V, 29 A, Single N−Channel, SO−8 Flat Lead Features • • • • Low RDS on Optimized Gate Charge Low Inductance SO−8 Package These are Pb−Free Devices http://onsemi.com V(BR)DSS Applications • Notebooks, Graphics Cards

NTMFS4747NT3G

Abstract: NTMFS4747N NTMFS4747NT1G 44A17
Contextual Info: NTMFS4747N Power MOSFET 30 V, 44 A, Single N−Channel, SO−8 FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com

V5834L

Contextual Info: NTMFS5834NL, NVMFS5834NL Power MOSFET 40 V, 75 A, 9.3 mW, Single N−Channel Features • • • • • • Low RDS on Low Capacitance Optimized Gate Charge NVMFS5834NLWF − Wettable Flanks Product NVMFS Prefix for Automotive and Other Applications Requiring

Contextual Info: NTS1545EMFS, NRVTS1545EMFS Exceptionally Low Leakage Trench-based Schottky Rectifier http://onsemi.com Features • Fine Lithography Trench−based Schottky Technology for Very Low • • • • • • • Leakage Fast Switching with Exceptional Temperature Stability

Contextual Info: NTMFS5C612NL Power MOSFET 60 V, 1.5 mW, 226 A, Single N−Channel Features • • • • Small Footprint 5x6 mm for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb−Free and are RoHS Compliant

Contextual Info: NTS12100MFS Very Low Forward Voltage Trench-based Schottky Rectifier Features http://onsemi.com • Fine Lithography Trench−based Schottky Technology for Very Low • • • • • • Forward Voltage and Low Leakage Fast Switching with Exceptional Temperature Stability

Contextual Info: NTMFS4H02N Power MOSFET 25 V, 193 A, Single N−Channel, SO−8FL Features • • • • Optimized Design to Minimize Conduction and Switching Losses Optimized Package to Minimize Parasitic Inductances Optimized material for improved thermal performance

Contextual Info: NTMFS5C410NL Power MOSFET 40 V, 0.9 mW, 302 A, Single N−Channel Features • • • • Small Footprint 5x6 mm for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb−Free and are RoHS Compliant

Contextual Info: NVMFS5C604NL Power MOSFET 60 V, 1.2 mW, 287 A, Single N−Channel Features • • • • • • Small Footprint 5x6 mm for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFS5C604NLWF − Wettable Flank Option for Enhanced Optical

4C03N

Abstract: NVMFS4C03NT3G
Contextual Info: NVMFS4C03N, NVMFS4C03NWF Power MOSFET 30 V, 2.1 mW, 143 A, Single N−Channel Logic Level, SO−8FL http://onsemi.com Features • • • • • • Small Footprint 5x6 mm for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses

Contextual Info: NTS1545MFS, NRVTS1545MFS Exceptionally Low Forward Voltage Trench-based Schottky Rectifier http://onsemi.com Features • Fine Lithography Trench−based Schottky Technology for Very Low • • • • • • • Forward Voltage and Low Leakage Fast Switching with Exceptional Temperature Stability

Contextual Info: NTS12100EMFS, NRVTS12100EMFS Very Low Leakage Trench-based Schottky Rectifier http://onsemi.com Features • Fine Lithography Trench−based Schottky Technology for Very Low • • • • • • • Forward Voltage and Low Leakage Fast Switching with Exceptional Temperature Stability

NVMFS5C404NLT1G

Contextual Info: NVMFS5C404NL, NVMFS5C404NLWF Power MOSFET 40 V, 0.75 mW, 352 A, Single N−Channel Features • • • • • • Small Footprint 5x6 mm for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFS5C404NLWF − Wettable Flank Option for Enhanced Optical

Contextual Info: NTS10120EMFS, NRVTS10120EMFS Very Low Leakage Trench-based Schottky Rectifier http://onsemi.com Features • Fine Lithography Trench−based Schottky Technology for Very Low • • • • • • • Forward Voltage and Low Leakage Fast Switching with Exceptional Temperature Stability