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    NTMFS4H02N Search Results

    NTMFS4H02N Datasheets (4)

    ON Semiconductor
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    NTMFS4H02NFT1G
    ON Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 25V 37A SO8FL Original PDF 94.9KB
    NTMFS4H02NFT3G
    ON Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 25V 37A SO8FL Original PDF 94.9KB
    NTMFS4H02NT1G
    ON Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 25V 37A SO8FL Original PDF 91.71KB
    NTMFS4H02NT3G
    ON Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 25V 37A SO8FL Original PDF 91.71KB
    SF Impression Pixel

    NTMFS4H02N Price and Stock

    onsemi

    onsemi NTMFS4H02NFT1G

    Single N-Channel Power MOSFET 25V, 193A, 1.4mO - Tape and Reel (Alt: NTMFS4H02NFT1G)
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    Avnet Americas NTMFS4H02NFT1G Tape & Reel 1,500
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    Rochester Electronics NTMFS4H02NFT1G 1 1
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    • 100 $1.81
    • 1000 $1.62
    • 10000 $1.53
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    Flip Electronics NTMFS4H02NFT1G 1,361
    • 1 $1.14
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    onsemi NTMFS4H02NT1G

    Power Field-Effect Transistor, 193A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Vyrian NTMFS4H02NT1G 12,561
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    onsemi NTMFS4H02NT3G

    Power Field-Effect Transistor, 193A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Vyrian NTMFS4H02NT3G 11,882
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    onsemi NTMFS4H02NFT3G

    Power Field-Effect Transistor, 193A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Vyrian NTMFS4H02NFT3G 8,980
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    NTMFS4H02N Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: NTMFS4H02NF Power MOSFET 25 V, 193 A, Single N−Channel, SO−8FL Features • • • • • Integrated Schottky Diode Optimized Design to Minimize Conduction and Switching Losses Optimized Package to Minimize Parasitic Inductances Optimized material for improved thermal performance


    Original
    ntmfs4h02nfntmfs4h02nf/d PDF

    Contextual Info: NTMFS4H02N Power MOSFET 25 V, 193 A, Single N−Channel, SO−8FL Features • • • • Optimized Design to Minimize Conduction and Switching Losses Optimized Package to Minimize Parasitic Inductances Optimized material for improved thermal performance


    Original
    ntmfs4h02nntmfs4h02n/d PDF

    Contextual Info: NTMFS4H02N Power MOSFET 25 V, 193 A, Single N−Channel, SO−8FL Features • • • • Optimized Design to Minimize Conduction and Switching Losses Optimized Package to Minimize Parasitic Inductances Optimized material for improved thermal performance


    Original
    ntmfs4h02nntmfs4h02n/d PDF

    Contextual Info: NTMFS4H02NF Power MOSFET 25 V, 193 A, Single N−Channel, SO−8FL Features • • • • • Integrated Schottky Diode Optimized Design to Minimize Conduction and Switching Losses Optimized Package to Minimize Parasitic Inductances Optimized material for improved thermal performance


    Original
    ntmfs4h02nfntmfs4h02nf/d PDF

    Contextual Info: NTMFS4H02N Power MOSFET 25 V, 193 A, Single N−Channel, SO−8FL Features • • • • Optimized Design to Minimize Conduction and Switching Losses Optimized Package to Minimize Parasitic Inductances Optimized material for improved thermal performance


    Original
    ntmfs4h02nntmfs4h02n/d PDF

    Contextual Info: NTMFS4H02N Power MOSFET 25 V, 193 A, Single N−Channel, SO−8FL Features • • • • Optimized Design to Minimize Conduction and Switching Losses Optimized Package to Minimize Parasitic Inductances Optimized material for improved thermal performance


    Original
    ntmfs4h02nntmfs4h02n/d PDF

    Contextual Info: NTMFS4H02NF Power MOSFET 25 V, 193 A, Single N−Channel, SO−8FL Features • • • • • Integrated Schottky Diode Optimized Design to Minimize Conduction and Switching Losses Optimized Package to Minimize Parasitic Inductances Optimized material for improved thermal performance


    Original
    ntmfs4h02nfntmfs4h02nf/d PDF