SO8FL Search Results

Contextual Info: NTMFD4C88N Advance Information PowerPhase, Dual N-Channel SO8FL 30 V, High Side 20 A / Low Side 24 A http://onsemi.com Features • • • • Co−Packaged Power Stage Solution to Minimize Board Space Minimized Parasitic Inductances Optimized Devices to Reduce Power Losses

Contextual Info: NTMFD4901NF Dual N-Channel Power MOSFET with Integrated Schottky 30 V, High Side 18 A / Low Side 30 A, Dual N−Channel SO8FL http://onsemi.com V BR DSS RDS(ON) MAX Q1 Top FET 30 V 6.5 mW @ 10 V Features • • • • • Co−Packaged Power Stage Solution to Minimize Board Space

Contextual Info: NTMFD4C87N Advance Information PowerPhase, Dual N-Channel SO8FL 30 V, High Side 20 A / Low Side 26 A http://onsemi.com Features • • • • Co−Packaged Power Stage Solution to Minimize Board Space Minimized Parasitic Inductances Optimized Devices to Reduce Power Losses

4902N

Contextual Info: NTMFD4902NF Dual N-Channel Power MOSFET with Integrated Schottky 30 V, High Side 18 A / Low Side 23 A, Dual N−Channel SO8FL http://onsemi.com V BR DSS RDS(ON) MAX Features • • • • • Co−Packaged Power Stage Solution to Minimize Board Space Low Side MOSFET with Integrated Schottky

Contextual Info: NTMFD4901NF Dual N-Channel Power MOSFET with Integrated Schottky 30 V, High Side 18 A / Low Side 30 A, Dual N−Channel SO8FL http://onsemi.com V BR DSS RDS(ON) MAX Features • • • • • Co−Packaged Power Stage Solution to Minimize Board Space Low Side MOSFET with Integrated Schottky

4902N

Contextual Info: NTMFD4902NF Dual N-Channel Power MOSFET with Integrated Schottky 30 V, High Side 18 A / Low Side 23 A, Dual N−Channel SO8FL V BR DSS Features • • • • • http://onsemi.com Co−Packaged Power Stage Solution to Minimize Board Space Low Side MOSFET with Integrated Schottky

Contextual Info: NTMFD4C20N Dual N-Channel Power MOSFET 30 V, High Side 18 A / Low Side 27 A, Dual N−Channel SO8FL http://onsemi.com Features • • • • Co−Packaged Power Stage Solution to Minimize Board Space Minimized Parasitic Inductances Optimized Devices to Reduce Power Losses

Contextual Info: NTMFD4902NF Dual N-Channel Power MOSFET with Integrated Schottky 30 V, High Side 18 A / Low Side 23 A, Dual N−Channel SO8FL http://onsemi.com V BR DSS RDS(ON) MAX Features • • • • • Co−Packaged Power Stage Solution to Minimize Board Space Low Side MOSFET with Integrated Schottky

Q1/HLA-80

Contextual Info: NTMFD4C85N Advance Information PowerPhase, Dual N-Channel SO8FL 30 V, High Side 25 A / Low Side 49 A http://onsemi.com Features • • • • Co−Packaged Power Stage Solution to Minimize Board Space Minimized Parasitic Inductances Optimized Devices to Reduce Power Losses

Contextual Info: NTMFD4C86N Advance Information PowerPhase, Dual N-Channel SO8FL 30 V, High Side 20 A / Low Side 32 A http://onsemi.com Features • • • • Co−Packaged Power Stage Solution to Minimize Board Space Minimized Parasitic Inductances Optimized Devices to Reduce Power Losses

Contextual Info: NVMFS4841N Power MOSFET 30V, 7 mW, 89A, Single N−Channel SO8FL Features • • • • • • Small Footprint 5x6 mm for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFS4841NWF − Wettable Flanks Product

Contextual Info: NVMFD5877NL Power MOSFET 60 V, 39 mW, 17 A, Dual N−Channel, Logic Level, Dual SO8FL Features • • • • • • • Small Footprint 5x6 mm for Compact Designs Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses 175°C Operating Temperature

4901n

Abstract: 4901NF 5-06B NTMFD4901NFT1G
Contextual Info: NTMFD4901NF Dual N-Channel Power MOSFET with Integrated Schottky 30 V, High Side 18 A / Low Side 30 A, Dual N−Channel SO8FL V BR DSS Features • • • • • http://onsemi.com Co−Packaged Power Stage Solution to Minimize Board Space Low Side MOSFET with Integrated Schottky

4902NF

Contextual Info: NTMFD4902NF Dual N-Channel Power MOSFET with Integrated Schottky 30 V, High Side 18 A / Low Side 23 A, Dual N−Channel SO8FL V BR DSS Features • • • • • http://onsemi.com Co−Packaged Power Stage Solution to Minimize Board Space Low Side MOSFET with Integrated Schottky

Contextual Info: NTMFD4901NF Dual N-Channel Power MOSFET with Integrated Schottky 30 V, High Side 18 A / Low Side 30 A, Dual N−Channel SO8FL http://onsemi.com V BR DSS RDS(ON) MAX Q1 Top FET 30 V 6.5 mW @ 10 V Features • • • • • Co−Packaged Power Stage Solution to Minimize Board Space

Contextual Info: NVMFD5877NL, NVMFD5877NLWF Power MOSFET 60 V, 39 mW, 17 A, Dual N−Channel, Logic Level, Dual SO8FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses NVMFD5877NLWF − Wettable Flanks Product

Contextual Info: NVMFD5877NL Power MOSFET 60 V, 39 mW, 17 A, Dual N−Channel, Logic Level, Dual SO8FL Features • • • • • • • Small Footprint 5x6 mm for Compact Designs Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses 175°C Operating Temperature

NVMFD5877NLT1G

Abstract: 5877NL
Contextual Info: NVMFD5877NL Power MOSFET 60 V, 39 mW, 17 A, Dual N−Channel, Logic Level, Dual SO8FL Features • • • • • • Small Footprint 5x6 mm for Compact Designs Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses 175°C Operating Temperature

5877NL

Abstract: NVMFD5877NLT1G
Contextual Info: NVMFD5877NL Power MOSFET 60 V, 39 mW, 17 A, Dual N−Channel, Logic Level, Dual SO8FL Features • • • • • • Small Footprint 5x6 mm for Compact Designs Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses 175°C Operating Temperature

v4841

Abstract: NVMFS4841NT1G JESD51-12
Contextual Info: NVMFS4841N Power MOSFET 30V, 7 mW, 89A, Single N−Channel SO8FL Features • • • • • Small Footprint 5x6 mm for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses AEC−Q101 Qualified These are Pb−Free Devices*

Contextual Info: NTMFD4902NF Dual N-Channel Power MOSFET with Integrated Schottky 30 V, High Side 18 A / Low Side 23 A, Dual N−Channel SO8FL V BR DSS Features • • • • • http://onsemi.com Co−Packaged Power Stage Solution to Minimize Board Space Low Side MOSFET with Integrated Schottky

Contextual Info: NVMFD5877NL Power MOSFET 60 V, 39 mW, 17 A, Dual N−Channel, Logic Level, Dual SO8FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses NVMFD5877NLWF − Wettable Flanks Product AEC−Q101 Qualified and PPAP Capable

NVMFD5877NL

Contextual Info: NVMFD5877NL Power MOSFET 60 V, 39 mW, 17 A, Dual N−Channel, Logic Level, Dual SO8FL Features • • • • • • • Small Footprint 5x6 mm for Compact Designs Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses 175°C Operating Temperature

NVMFD5877NL

Contextual Info: NVMFD5877NL Power MOSFET 60 V, 39 mW, 17 A, Dual N−Channel, Logic Level, Dual SO8FL Features • • • • • • • Small Footprint 5x6 mm for Compact Designs Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses 175°C Operating Temperature