NVMFS4841N Search Results

NVMFS4841N Datasheets (2)

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On Semiconductor

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
NVMFS4841NT1G		On Semiconductor	NVMFS4841 - TRANSISTOR 16 A, 30 V, 0.0114 ohm, N-CHANNEL, Si, POWER, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, CASE 488AA-01, SO-8FL, DFN5, 6 PIN, FET General Purpose Power	Original	PDF	120.11KB	6
NVMFS4841NWFT1G		On Semiconductor	NVMFS4841 - Power MOSFET 30V 89A 7 mOhm Single N-Channel SO-8FL	Original	PDF	120.1KB	6

NVMFS4841N Price and Stock

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onsemi


onsemi NVMFS4841NWFT1G Power Field-Effect Transistor, 89A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Vyrian	NVMFS4841NWFT1G		11,609			1 - 10 - 100 - 1000 - 10000 -	Get Quote
onsemi NVMFS4841NT1G Power Field-Effect Transistor, 16A I(D), 30V, 0.0114ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Vyrian	NVMFS4841NT1G		6,457			1 - 10 - 100 - 1000 - 10000 -	Get Quote

NVMFS4841N Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: NVMFS4841N Power MOSFET 30V, 7 mW, 89A, Single N−Channel SO8FL Features • • • • • • Small Footprint 5x6 mm for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFS4841NWF − Wettable Flanks Product	Original	nvmfs4841n nvmfs4841nwf aec-q101 nvmfs4841n/d	PDF
v4841 Abstract: NVMFS4841NT1G JESD51-12 Contextual Info: NVMFS4841N Power MOSFET 30V, 7 mW, 89A, Single N−Channel SO8FL Features • • • • • Small Footprint 5x6 mm for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses AEC−Q101 Qualified These are Pb−Free Devices*	Original	nvmfs4841n aec-q101 nvmfs4841n/d v4841 +2nvmfs4841nt1g jesd51-12	PDF
Contextual Info: NVMFS4841N Power MOSFET 30V, 7 mW, 89A, Single N−Channel SO8FL Features • • • • • Small Footprint 5x6 mm for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses AEC−Q101 Qualified These are Pb−Free Devices	Original	nvmfs4841n aec-q101 nvmfs4841n/d	PDF
Contextual Info: NVMFS4841N Power MOSFET 30V, 7 mW, 89A, Single N−Channel SO8FL Features • • • • • Small Footprint 5x6 mm for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses AEC−Q101 Qualified These are Pb−Free Devices	Original	nvmfs4841n nvmfs4841n/d	PDF
Contextual Info: NVMFS4841N Power MOSFET 30V, 7 mW, 89A, Single N−Channel SO8FL Features • • • • • Small Footprint 5x6 mm for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses AEC−Q101 Qualified and PPAP Capable	Original	nvmfs4841n aec-q101 nvmfs4841n/d	PDF
2N6284 inverter schematic diagram Abstract: NTD18N06 MKP9V160 sine wave inverter tl494 circuit diagram ECL IC NAND adp3121 DARLINGTON TRANSISTOR ARRAY ezairo MC74HC4538 TIP142 6403 F Contextual Info: ON Semiconductor Master Components Selector Guide AC−DC Controllers and Regulators; Amplifiers and Comparators; Analog Switches; Bipolar Transistors; Clock and Data Distribution; Clock Generation; Custom; DC−DC Controllers, Converters, and Regulators; Digital	Original	sg388/d 2n6284 inverter schematic diagram ntd18n06 mkp9v160 +7sine wave inverter tl494 circuit diagram ecl ic nand adp3121 darlington transistor array ezairo mc74hc4538 tip142 6403 f	PDF