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    onsemi NTMFS4833NT3G

    NTMFS4833NT3G N-CHANNEL MOSFET TRANSISTOR, 191 A, 30 V, 8-PIN SO-8FL
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    RS NTMFS4833NT3G Bulk 5
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    Chip 1 Exchange NTMFS4833NT3G 2,690
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    Vyrian NTMFS4833NT3G 7,611
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    Advantech Co Ltd 1970004833N001

    H.D R3 TIGERLAKE 132X65.5X15.5 MIO-5375
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    RS 1970004833N001 Bulk 3 Weeks 1
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    Phoenix Contact 1674833

    Heavy Duty Power Connectors Turn 2.5 Crimp Fem Diam. 0.75-1.0mm, Au
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    TTI 1674833 Bulk 28 100
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    Littelfuse Inc 0318001.MXP

    Cartridge Fuses 250V 1A Axial Fast Acting
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    TTI 0318001.MXP Bulk 1,000
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    Vishay Intertechnologies TSOP34833

    Infrared Receivers 2.5-5.5V 33kHz 45Deg
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    TTI TSOP34833 Tube 2,160
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    4833N Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    NTMFS4833N

    Abstract: NTMFS4833NT1G 4833N NTMFS4833NT3G 4833n mosfet
    Contextual Info: 4833N Power MOSFET 30 V, 191 A, Single N−Channel, SO−8 FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices*


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    NTMFS4833N NTMFS4833N/D NTMFS4833N NTMFS4833NT1G 4833N NTMFS4833NT3G 4833n mosfet PDF

    NTMFS4833NT1G

    Contextual Info: 4833N Power MOSFET 30 V, 191 A, Single N−Channel, DFN5 SO−8FL Features • • • • Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices


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    NTMFS4833N AND8195/D NTMFS4833N/D NTMFS4833NT1G PDF

    099 dfn8

    Contextual Info: 4833NS SENSEFET Power MOSFET 30 V, 156 A, Single N−Channel, SO−8 FL Features • • • • • Accurate, Lossless Current Sensing Low RDS on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses


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    NTMFS4833NS NTMFS4833NS/D 099 dfn8 PDF

    NTMFS4833NT1G

    Contextual Info: 4833N Power MOSFET 30 V, 191 A, Single N−Channel, SO−8FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com


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    NTMFS4833N AND8195/D NTMFS4833N/D NTMFS4833NT1G PDF

    NTMFS4833NT1G

    Abstract: 4833n NTMFS4833N NTMFS4833NT3G
    Contextual Info: 4833N Power MOSFET 30 V, 191 A, Single N−Channel, SO−8 FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices*


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    NTMFS4833N NTMFS4833N/D NTMFS4833NT1G 4833n NTMFS4833N NTMFS4833NT3G PDF

    NTMFS4833N

    Abstract: 4833n NTMFS4833NT1G NTMFS4833NT3G
    Contextual Info: 4833N Power MOSFET 30 V, 191 A, Single N-Channel, SO-8 FL Features •ăLow RDS on to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăThese are Pb-Free Devices* http://onsemi.com


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    NTMFS4833N NTMFS4833N/D NTMFS4833N 4833n NTMFS4833NT1G NTMFS4833NT3G PDF

    NTMFS4833NT1G

    Contextual Info: 4833N Power MOSFET 30 V, 191 A, Single N−Channel, SO−8FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com


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    NTMFS4833N AND8195/D NTMFS4833N/D NTMFS4833NT1G PDF

    Contextual Info: 4833NS SENSEFET Power MOSFET 30 V, 156 A, Single N−Channel, SO−8 FL Features • • • • • Accurate, Lossless Current Sensing Low RDS on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses


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    NTMFS4833NS NTMFS4833NS/D PDF

    NTMFS4833NT1G

    Abstract: MOSFET 4833n
    Contextual Info: 4833N Power MOSFET 30 V, 191 A, Single N−Channel, SO−8FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com


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    NTMFS4833N AND8195/D NTMFS4833N/D NTMFS4833NT1G MOSFET 4833n PDF

    4833n

    Abstract: 4833n datasheet NTMFS4833N NTMFS4833NT1G NTMFS4833NT3G
    Contextual Info: 4833N Power MOSFET 30 V, 191 A, Single N−Channel, SO−8 FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices*


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    NTMFS4833N NTMFS4833N/D 4833n 4833n datasheet NTMFS4833N NTMFS4833NT1G NTMFS4833NT3G PDF

    Contextual Info: 4833NA Power MOSFET 30 V, 191 A, Single N−Channel, SO−8FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com


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    NTMFS4833NA NTMFS4833NA/D PDF

    4833n

    Abstract: NTMFS4833NT1G NTMFS4833N NTMFS4833NT3G
    Contextual Info: 4833N Power MOSFET 30 V, 191 A, Single N−Channel, SO−8FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com


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    NTMFS4833N AND8195/D NTMFS4833N/D 4833n NTMFS4833NT1G NTMFS4833N NTMFS4833NT3G PDF

    Contextual Info: 4833N Power MOSFET 30 V, 191 A, Single N−Channel, SO−8 FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com


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    NTMFS4833N AND8195/D NTMFS4833N/D PDF

    NTMFS4833NST1G

    Abstract: NTMFS4833NS marking 099 dfn8 099 dfn8
    Contextual Info: 4833NS SENSEFET Power MOSFET 30 V, 156 A, Single N−Channel, SO−8 FL Features • • • • • Accurate, Lossless Current Sensing Low RDS on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses


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    NTMFS4833NS NTMFS4833NS/D NTMFS4833NST1G marking 099 dfn8 099 dfn8 PDF

    NTMFS4833NT1G

    Abstract: 4833n NTMFS4833N NTMFS4833NT3G
    Contextual Info: 4833N Power MOSFET 30 V, 191 A, Single N−Channel, SO−8 FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices*


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    NTMFS4833N NTMFS4833N/D NTMFS4833NT1G 4833n NTMFS4833N NTMFS4833NT3G PDF