480S2 Search Results

Contextual Info: FSL23A4D, FSL23A4R Semiconductor 5A, 250V, 0.480 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 5A, 250V, ros ON = 0-480S2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs

0Q171

Abstract: C11256 OPTI802GP burndy CONNECTOR TAG7_ equivalent SRAM timing c9539
Contextual Info: -V • y CYPRESS Features CYM9244, CYM9245 CYM9246, CYM9247 PRELIMINARY 128K/256K Cache Module Family for the OPTi 802GP Chip Set pins and on-board decoupling capacitors ensure maximum protection from noise. • TTL-compatible inputs/outputs Functional Description

Contextual Info: CM OS SRAM KM64258C 65,536 WORDx4 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 12, 15, 20ns Max. » Low Power Dissipation Standby (TTL) : 40mA (max.) (CMOS) : 2mA(max.) Operating : KM 64258C-12 : 150mA (max.) KM 64258C-15 : 140mA (max.)

Contextual Info: PDM4M6181 PDM4M6182 Pa r a u g m 256 KByte and 512 KByte Neptune Compatible Second Level Cache Modules for Intel Pentium CPUs Features Description □ 256 KByte and 512 KByte versions. □ 3.3V I/O compatible. □ Ideal for use with Intel Pentium™ CPU based

Contextual Info: MOSEL MS7200/ 7201A / 7202A JANUARY 1990 256 x 9, 512 x 9 , 1K x 9 CMOS FIFO PRELIMINARY FEATURES DESCRIPTION • First-In/First-Out static RAM based dual port memory The MOSEL MS7200/7201A/7202A are dual-port static RAM based CMOS First-In/First-Out FIFO memories

half-adder by using D flip-flop

Abstract: L9915 fairchild micrologic ME 9926 rtl micrologic rs FLIPFLOP SCHEMATIC mod 8 using jk flipflop rtl micrologic 900 700S2 dual flip flop 8-pin
Contextual Info: JUNE 1966 • SL-218 RT|xL COMPOSITE DATA SHEET INDUSTRIAL MICROLOGIC INTEGRATED CIRCUITS OPERATI NG T E M P E R A T U R E RANGE: 0°C t o + 7 0 ° C M E T A L PACKAGE 15° C t o 5 5° C (EPOXY) s o > co X GENERAL DESCRIPTION — The Fairchild Ind ustrial Resistor-Transistor M icrologic® (RY/iL) integrated c irc u it fa m ily consists o f a num ber

Contextual Info: CMOS STATIC RAM 64K 64K x 1-BIT IDT7187S IDT7187L Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • High speed (equal access and cycle time) — Military: 20/25/35/45/55/70/85ns (max.) — Commercial: 15/20/25/35ns (max.) The IDT7187 is a 65,536-bit high-speed static RAM

Contextual Info: Paradigm PDM44036 32K x 36 Fast CMOS Synchronous Static SRAM with Linear Burst Counter Features Description n Interfaces directly with the Motorola 680X0 and PowerPC processors 80,66, 60, 50,40 MHz □ High Speed Access Times - Clock to data valid times:

Contextual Info: KM644002/L CMOSSRAM 1,048,576 WORD x 4 Bit High-Speed CMOS Static RAM GENERAL DESCRIPTION FEATURES • Fast Access Time : 17, 20, 25ns Max. • Low Power Dissipation Standby (TTL) : 60mA (Max.) (CMOS) : 10mA (Max.) L-Ver : 500«A (Max.) Operating : KM644002-17 : 170mA (Max.)

Contextual Info: L7C162 1 6 K x 4 Static RAM DEVICES INCORPORATED FEATURES | DESCRIPTION □ 16K x 4 Static RAM with Separate I /O and High Im pedance W rite □ A uto-Pow erdow n Design □ A dvanced CMOS Technology □ H igh Speed — to 12 ns m axim um □ Low Pow er O peration

l9111

Abstract: ST VIPER 37 ST VIPER 124 7MPV6214 d4793 st viper 100 31 VIPer 32 7MPV6216 VIPER 27 VIPER 22
Contextual Info: 256KB AND 512KB SECONDARY CACHE MODULES FOR THE INTEL PENTIUM CPU AND OPTi™ VIPER CORE LOGIC CHIPSET FEATURES • For Intel 3.3V Pentium-based systems using the OPTi Viper core logic chipset • Asynchronous and pipelined burst SRAM options in the same module pinout

Contextual Info: FUJI CMOS 16,384 Words x 16-Bit STATIC RANDOM ACCESS MEMORY MODULE The Fujitsu MB85402 is a fully decoded, CMOS Static random access memory module comprised of four MB81C75 devices mounted on a 36-pin ceramic board. Organized as four 16K x 4 devices, the MB85402 is op­

IDT79R4000

Contextual Info: 256KB/1MB/ 4MB IDT79R4000 SECONDARY CACHE MODULE BLOCK FAMILY PRELIMINARY IDT7MP6074 IDT7MP6084 IDT7MP6094 FEATURES: DESCRIPTION: • High-speed BiCMOS/CMOS secondary cache module block constructed to support the IDT79R4000 CPU • Available as a pin compatible family to build 256KB uni­

KM6865BP-15

Abstract: km6865b 3I322
Contextual Info: CMOS SRAM KM6865B/BL 8,192 WORD x 8 Bit High Speed CMOS Static RAM GENERAL DESCRIPTION FEATURES T h e K M 6 8 6 5 B /B L is a 6 5,5 36 -b it h ig h -s p e e d S ta tic • Fast A cc e s s Tim e: 12, 15, 20, 25ns m ax. • Low Pow er D issipation Standby (TTL)

Contextual Info: HM624256A Series- Preliminary 262,144-Word x 4-Bit High Speed CMOS Static RAM • DESCRIPTION The Hitachi HM624256A is a high speed 1M Static RAM organized as 256-kword x 4-bit. It real­ izes high speed access time {20/25/35 ns and low

Contextual Info: HM624256A Series Preliminary 262,144-Word x 4-Bit High Speed CMOS Static RAM • DESCRIPTION The Hitachi HM624256A is a high speed 1M Static RAM organized as 256-kword x 4-bit. It real­ izes high speed access time 20/25/35 ns and low power consumption, employing CM O S process

Contextual Info: CMOS STATIC RAMS 16K 4Kx 4-BIT IDT71681SA/LA IDT71682SA/LA Separate Data Inputs and Outputs Integrated Device Technology, Inc. FEATURES: • Produced with advanced C E M O S high-performance technology • S eparate data inputs and outputs • ID T71681S A /LA : outputs track inputs during write mode

Contextual Info: PARADIGM TECHNOLOGY I NC SGE D bTMlO^O OOOOOH 3 « P A T i T ^ V PARADEN! 256K Static RAM 256K x 1-Bit o S PDM41257SA PDM41257LA Features Description □ High speed access times Com'l: 1 0 ,1 2 ,1 5 ,2 0 and 25ns M il: 1 2 ,1 5 ,2 0 ,2 5 , 35,4 5 , and 55ns

Contextual Info: B\RADIGM h im m o 0 DGQ437 17Ö * P A T PDM44259S PDM44259L 32K x 9 Bit Fast CMOS Synchronous Static RAM with Burst Counter Features Description □ Interfaces directly with the i486 , Pentium™ processors 66.6,60,50,40 and 33.3 MHz The PDM44259 is a high performance synchronous

DSC 100-13

Abstract: S0244
Contextual Info: I N T E GR AT ED DEVICE SflE D 4Ö25 77 1 CMOS STATIC RAMS 16K 4Kx 4-BIT Separate Data Inputs and Outputs □0 11 5b 4 4TT IDT71681SA/LA IDT71682SA/LA T -m ,-z i - o g FEATURES: DESCRIPTION: • S eparate data inputs and outputs • ID T71681S A/LA: outputs tra ck inputs during w rite m ode

Contextual Info: ^ MITSUBISHI LSIs M5M51004P,J-25,-35,-45 1 0 4 8 S 7 6 -B IT 2 6 2 1 4 4 -W O R D BY 4 -B IT CMOS STATIC RAM D ESCRIPTIO N The M 5M 51004 is a fa m ily o f 262144-word by 4 -b it static RAMs, fabricated w ith the high performance CMOS silicon gate process and designed fo r high-speed application. These

Contextual Info: CMOS SRAM KM64258C 65,536 WORDx4 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 12,15, 20ns Max. • Low Power Dissipation Standby (TTL) : 40mA (max.) (CMOS) : 2mA(max.) Operating : KM64258C-12 : 150mA (max.) KM64258C-15 : 140mA (max.)

M5M5188A-45

Abstract: M5MS M5M5188A-35
Contextual Info: MITSUBISHI LSI« M5M5188AP, J-25, -35, -45, -55 6 S S 3 6 - B IT 1 6 3 S 4 -W O R D BY 4 -B IT CMOS STATIC RAM DESCRIPTION This is family of 16384 word by 4-bit static RAMs, fabri­ cated w ith the high-performance CMOS silicon-gate MOS process and designed for high-speed application. These

1n813 fairchild

Abstract: 2N3303 abb inverter manual acs 800 FD6666 diode 2N3137 UA703 equivalent FD200 diode 2N2369 AVALANCHE PULSE GENERATOR UA716 Fairchild dtl catalog
Contextual Info: Fairchild Semiconductor Dab Cataloi 196! The Fairchild Semiconductor Data Cataloc — an all-inclusive volume of product infor mation covering diodes, transistors, digita and linear integrated circuits, MSI and LS devices from the world's largest suppliei