47KFL Search Results

Contextual Info: I Ordering number :E N 4 7 6 8 _ 2SC4922 N PN E p itax ial P la n a r Silicon T ran sisto r M uting Circuit, Driver Applications F e a tu re s • H igh DC c u rre n t gain. •On-chip bias resistance R1 = 47kfl,R 2 = 47ki2 • Very sm all-sized package p erm ittin g 2SC4922-applied sets to be m ade sm aller and slim m er.

2SA1420

Abstract: SC36 small signal transistor
Contextual Info: Ordering number: EN 1682A 2SA1420/2SC3653 PNP/ NPN Epitaxial P lanar Silicon Transistors SAßtYO i Switching Applications _ with Bias Resistor Use .Switching circuit, inverter circuit, interface circuit, driver circuit Features . With bias resistor (R1=47kfl ,R2=47kO ).

Contextual Info: SANYO SEMICONDUCTOR FC107 CORP E2E D 7 cn 7 D 7 b Q0G7372 1 T-Sl-ll # P N P Epitaxial Planar S ilicon C o m p o site Transistor 2066 Switching Applications 3075 with Bias Resistances R1=47ki2, R2=47kO Features • On-chip bias resistors (Ri = 47kfl,R2= 47k£2)

KSR1212

Abstract: KSR2212
Contextual Info: {SAMSUNG SEM ICONDUCTOR INC KSR1212 IME D | 7^4145 0007034 1 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In • Switching Circuit, Inverter, interface circuit Driver circuit • Built in bias Resistor (R=47Kfl) • Complement to KSR2212

marking M42

Abstract: KSR1113 KSR2113
Contextual Info: SAMSUNG SEMICONDUCTOR INC KSR2113 14E O I 7*11.4142 G 007133 T PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION T- Bias Resistor Built In • Switching circuit, Inverter, interface circuit Driver circuit • Built in bias Reslstor(R,=2.2Kf), R,=47Kfl)

KSR1206

Abstract: KSR2206
Contextual Info: SAMSUNG SEMICONDUCTOR INC 7 - 3 5 - ) 1 4 E D | ? cl b 4 l 4 a G007Q73 7 | KSR1206 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In) • Switching Circuit, Inverter, Interface circuit Driver circuit • Built in bias Resistor (R,=10KI), R,=47Kfl)

transistor 1207

Abstract: R1207
Contextual Info: KSR2207 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built in • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias R esistor (Ri<*22kQ, R2=47kfl) • Com plem ent to KS R 1207 ABSOLUTE MAXIMUM RATINGS (TA=25t)

transistor d 2213

Contextual Info: KSR1213 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In TO -92S • Sw itching circu it. Inverter, Interface circu it, D river C ircu it • B uilt in b is s R e sisto r (R , =2.2kQ, R j*47kfl) • Com plem ent to KSR 2213 ABSOLUTE MAXIMUM RATINGS (TA=25t;)

ksr1012

Contextual Info: KSR1012 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In TO-92 • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R*47kfl) • Complement to KSR2012 ABSOLUTE MAXIMUM RATINGS (TA=25t)

transistor marking code wts

Abstract: sot-23 marking WTs transistor marking code wts 15 sot-23 WTs WTs transistor
Contextual Info: SIEMENS BCR 166 PNP Silicon Digital Transistor >Switching circuit, inverter, interface circuit, driver circuit •Built in bias resistor R1=4.7ki2, R2=47kfl Type Marking Ordering Code Pin Configuration BCR 166 WTs 1=B Q62702-C2339 Package 2=E 3=C SOT-23

Contextual Info: SIEMENS BCR 196W PNP Silicon Digital Transistor »Switching circuit, inverter, interface circuit, driver circuit •Built in bias resistor R1=47kfl, R2=22kiî WXs UPON INQUIRY 1 =B Package o BCR 196W Pin Configuration II CO Marking Ordering Code III II CM

Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR KSR2006 SWITCHING APPLICATION Bias Resistor Built In • Switching Circuit, Inverter, Interface circuit Driver circuit • Built in bias Resistor (R,=10Kfl, R2=47Kfl) • Complement to KSR1006 TO-92 ABSOLUTE MAXIMUM RATINGS (Ta=25°C)

Contextual Info: SIEMENS BCR 158W PNP Silicon Digital Transistor >Switching circuit, inverter, interface circuit, driver circuit « Built in bias resistor R1=2.2ki2, R2=47kfl Ordering Code Pin Configuration WIs UPON INQUIRY 1= B Package 2= E o tl Marking BCR 158W CO Type

Contextual Info: SIEMENS BCR 108W NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R]=2.2kD, R2=47kfl Pin Configuration BCR 108W WHs Q62702-C2275 1= B Package o Ordering Code II CO Marking LU II

Contextual Info: KSR1013 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION B ias R esistor Built In TO-92 • Switching circuit, Inverter. Interface circuit Driver circuit • Built in bias Resistor(R, = 2.2K!!, R, = 47Kfl) • Complement to K S R 2 0 1 3 ABSOLUTE MAXIMUM RATINGS (Ta=25°C)

KSR1104

Abstract: KSR2104 7K SOT23
Contextual Info: SAMSUNG SEMIC OND UCTOR.INC KSR1104 14É D | 7 ^ 4 1 4 3 0007045 5 | NPN EPITAXIAL SILICON TRANSISTOR r- 3 5 -It SWITCHING APPLICATION Bias Resistor Built In • Switching Circuit, Inverter, Interface circuit Driver circuit • Built in bias Resistor (R,=47Kfl, R,o47Kft)

Contextual Info: KSR2214 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R|=4.71d), R2=47kfl) • Com plem ent to KSR1214 ABSOLUTE MAXIMUM RATINGS <TA»25t:)

Contextual Info: SIEMENS BCR 148 NPN Silicon Digital Transistor ►Switching circuit, inverter, interface circuit, driver circuit » Built in bias resistor Ri=47kfl, R2=47kfi Type Marking Ordering Code Pin Configuration BCR 148 WEs Q62702-C2261 1 =B Package 2= E 3=C SOT-23

marking bt5

Contextual Info: BCR 148S SIEMENS NPN Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit • Two galvaniv internal isolated Transistors driver circuit • Built in bias resistor (R1=47kiì, R2=47Kfl) 02 fi Marking Ordering Code Pin Configuration

Contextual Info: SANYO SEMICONDUCTOR CORP 25E D 7 ^ 7 07k 0 0 0 7 3 b ö 7 FC105 T -3 7 -2 7 PNP Epitaxial Planar Silicon Composite Transìstor 2067 Switching Applications with Bias Resistances R 1=47kfi, R2=47kO 3073 Features • On-chip bias resistors (Ri = 47kft,R2= 47kfl)

Contextual Info: SANYO SEMI CONDUCTOR CORP 22E D ? ci cl ? Q 7 b FC106 QQQ7 3 7 Q 5 T-35-21 NPN Epitaxial Planar Silicon Com posite Transistor 2067 Switching Applications with Bias Resistances R1=47kO, R2=47kO F e a tu re s • On-chip bias resistors (Ri = 47kQ,R2= 47kfl)

marking code 718 sot363

Contextual Info: SIEMENS BCR 185S PNP Silicon Digital Transistor Array >Switching Circuit, inverter, interface circuit, driver circuit • Two galvanic internal isolated Transistors in one package »Built in biase resistor (R ^IO kß, R2=47kfl) Type BCR 185S Marking Ordering Code Pin Configuration

ksr1012

Contextual Info: KSR1012 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In • Switching Circuit, Inverter, Interface circuit Driver circuit • Built in bias Resistor (R=47Kfl) • Complement to KSR2012 ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic

KSR2106

Contextual Info: KSR2106 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION B ia s Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R, =10kfl, R2=47kfl) • Complement to KSR1106 SO T-23 ABSO LUTE MAXIM UM RATINGS (TA= 2 5 t)