KSR1104 Search Results

KSR1104

Abstract: KSR2104
Contextual Info: KSR2104 KSR2104 Switching Application Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=47KΩ, R2=47KΩ) • Complement to KSR1104 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector Equivalent Circuit

KSR1104

Abstract: KSR2104
Contextual Info: KSR1104 KSR1104 Switching Application Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1 =47KΩ, R2=47KΩ) • Complement to KSR2104 3 2 SOT-23 1 1. Base 2. Emitter 3. Collector Equivalent Circuit

Contextual Info: KSR1104 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In S O T-23 • Sw itching circuit, Inverter, Interface circuit, D river Circuit • Built in bias R esistor (R i =A1KQ., R2=47K£i) • C om plem ent to K S R 2104 ABSOLUTE MAXIMUM RATINGS (TA=25°C)

KSR1104

Abstract: KSR2104 DSA008107
Contextual Info: KSR1104 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In SOT-23 • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1 =47KΩ, R2=47KΩ) • Complement to KSR2104 ABSOLUTE MAXIMUM RATINGS (TA=25°°C)

KSR1104

Abstract: KSR2104
Contextual Info: KSR1104 KSR1104 Switching Application Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1 =47KΩ, R2=47KΩ) • Complement to KSR2104 2 1 SOT-23 1. Base 2. Emitter 3. Collector Equivalent Circuit

KSR1104

Abstract: KSR2104
Contextual Info: KSR2104 KSR2104 Switching Application Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=47KΩ, R2=47KΩ) • Complement to KSR1104 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector Equivalent Circuit

Contextual Info: KSR2104 KSR2104 Switching Application Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=47KΩ, R2=47KΩ) • Complement to KSR1104 2 1 SOT-23 1. Base 2. Emitter 3. Collector Equivalent Circuit

Contextual Info: KSR1104 KSR1104 Switching Application Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1 =47KΩ, R2=47KΩ) • Complement to KSR2104 3 2 SOT-23 1 1. Base 2. Emitter 3. Collector Equivalent Circuit

Contextual Info: KSR1104 KSR1104 Switching Application Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1 =47KΩ, R2=47KΩ) • Complement to KSR2104 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector Equivalent Circuit

KSR1104

Abstract: KSR2104 7K SOT23
Contextual Info: SAMSUNG SEMIC OND UCTOR.INC KSR1104 14É D | 7 ^ 4 1 4 3 0007045 5 | NPN EPITAXIAL SILICON TRANSISTOR r- 3 5 -It SWITCHING APPLICATION Bias Resistor Built In • Switching Circuit, Inverter, Interface circuit Driver circuit • Built in bias Resistor (R,=47Kfl, R,o47Kft)

SIL 2104

Contextual Info: K SR2104 P N P E P IT A X IA L S IL IC O N T R A N S IS T O R SWITCHING APPLICATION Bias Resistor Built In • Switching circuit, Inverter, Interface circuii, Driver Circuit • Built in bias Resistor (Ri >=471(11, R 21=47kil) • Complement to KSR1104 ABSO LUTE MAXIMUM RATINGS (TA- 2 5 t )

Contextual Info: KSR1104 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION B ia s R e s is to r B uilt In • Switching circuit, Inverter, Interface circuit, Driver Circuit > Built in bias R esisto r (R, M t t Q . RjM 7M J) • Com plem ent to KSR2104 SOT-23 ABSOLUTE MAXIMUM RATINGS (TA=25t:)

KSR1104

Abstract: KSR2104
Contextual Info: KSR1104 KSR1104 Switching Application Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1 =47KΩ, R2=47KΩ) • Complement to KSR2104 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector Equivalent Circuit

transistor QB

Contextual Info: KSR2104 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In SOT-23 • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor ^ = 4 7 X 1 2 , R2=47Ki2) • Complement to KSR1104 ABSOLUTE MAXIMUM RATINGS (T a=25°C)

Contextual Info: KSR2104 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In • Switching Circuit, Inverter, Interface circuit Driver circuit • Built in bias Resistor (R,=47KB, R2=47K0) • Complement to KSR1104 ABSOLUTE MAXIMUM RATINGS (Ta=25°C )

KSR1104

Abstract: KSR2104
Contextual Info: KSR2104 KSR2104 Switching Application Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=47KΩ, R2=47KΩ) • Complement to KSR1104 2 1 SOT-23 1. Base 2. Emitter 3. Collector Equivalent Circuit

KSR1104

Abstract: KSR2104
Contextual Info: KSR2104 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=47KΩ, R2=47KΩ) • Complement to KSR1104 SOT-23 ABSOLUTE MAXIMUM RATINGS (TA=25°°C)

resistor cross reference

Contextual Info: KSR2104 KSR2104 Switching Application Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=47KΩ, R2=47KΩ) • Complement to KSR1104 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector Equivalent Circuit

SOT-23 ZF

Abstract: KSR1104 KSR2104 inverter ic marking H.A
Contextual Info: KSR1104 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION B ias R esistor Built In S O T-23 • Sw itching circuit, Inverter, Interface circuit, D river C ircuit • Built in bias R esistor (R i =47K£1, R2=47K£1) • C om plem ent to KSR2104 ABSOLUTE MAXIMUM RATINGS (TA=25°C)

transistor 13003 AD

Abstract: ksd-180 HF 13003 KSD180 13003 HF KSD168 KSD966 ksd-168 PNP NPN Transistor VCEO 120V 100V Ic 7A KSC 1.5k 250v
Contextual Info: TRANSISTORS FUNCTION GUIDE 1. SMALL SIGNAL TRANSISTORS 1.1 General Purpose Transistors 1.1.1 SOT-23 Type Transistors Device and Polarity Marking Condition V ceo lc Vce h FE Condition (c le Vce(sat},VBE(sat)(v) Condition fiÌMHz) (V) (A) (V) !c (mA) (mA)

SSP35n03

Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Contextual Info: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A

STF12A80

Abstract: BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B
Contextual Info: Cross Reference For the most up to date cross reference, go to the product portal: Manufacturer type number Manufacturer Philips type number Page number Manufacturer type number Manufacturer

transistor SMD s72

Abstract: nec mys 501 MYS 99 transistor 8BB smd st MYS 99 102 kvp 81A kvp 81A DIODE Kvp 69A kvp 86a smd transistor A7p
Contextual Info: ВВЕДЕНИЕ Впервые, сделана столь масштабная попытка, разобраться с маркировкой компонентов поверхностного монтажа SMD . Конечно, книга не является панацеей, но на взгляд авторов должна существенно помочь в той

marking fl

Abstract: KSR2104 KSR1104 H47-K
Contextual Info: SAMSUNG SEMICONDUCTOR m e_ INC KSR2104 00D7117 d | i PNP EPITAXIAL SILICON TRANSISTOR “ SWITCHING APPLICATION Bias Resistor Built In ~ - 3 y -13 — • Switching Circuiti Inverter, Interface circuit Driver circuit • Built In bias Resistor (R,=47KQ, R¡=47K0)