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Siemens SPI47N10L Trans MOSFET N-CH 100V 47A 3-Pin(3+Tab) TO-262
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Bristol Electronics	SPI47N10L		99			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Infineon Technologies AG SPB47N10L SIPMOS POWER TRANSISTOR Power Field-Effect Transistor, 47A I(D), 100V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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ComSIT USA	SPB47N10L		845			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Infineon Technologies AG SPI47N10L Power Field-Effect Transistor, 47A I(D), 100V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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Vyrian	SPI47N10L		5,815			1 - 10 - 100 - 1000 - 10000 -	Get Quote

47N10L Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
diode gee a9 Abstract: HTC one m7 Contextual Info: SPP 47N10L Preliminary Data SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage ^DS • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current ñ DS on 0.026 fl 47 A b 100 V • Logic Level	OCR Scan	47n10l spp47n10l spb47n10l p-t0220-3-1 +8q67040-s4177 p-t0263-3-2 q67040-s4176 s35bq5 q133777 sqt-89 diode gee a9 htc one m7	PDF
47N10L Abstract: transistor FS 22 SM 10 j50g SPB47N10L SPP47N10L Contextual Info: Preliminary Data SPP 47N10L SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage VDS • Drain-Source on-state resistance RDS on 0.026 Ω Continuous drain current ID Enhancement mode • Avalanche rated 100 V 47 A • Logic Level	Original	47n10l spp47n10l p-to220-3-1 q67040-s4177 +5spb47n10l p-to263-3-2 q67040-s4176 transistor fs 22 sm 10 j50g	PDF
47N10L Abstract: smd diode code marking 33A SPP47N10L SPB47N10L SPI47N10L KJ SMD DIODE MARKING Contextual Info: Preliminary data 47N10L 47N10L,47N10L SIPMOS =Power-Transistor Product Summary Feature N-Channel Enhancement mode Logic Level 175°C operating temperature Avalanche rated dv/dt rated 100 VDS P-TO262-3-1 RDS on 26 m ID 47 A P-TO263-3-2	Original	spi47n10l spp47n10l spb47n10l p-to262-3-1 +6p-to263-3-2 p-to220-3-1 q67040-s4177 47n10l smd diode code marking 33a kj smd diode marking	PDF
PEF 24628 Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819 Contextual Info: 2006/2007 Published by Infineon Technologies AG Ordering No. B192-H6780-G10-X-7600 Printed in Germany PS 080648. nb Infineon Product Catalog for Distribution 2006/2007 Product Catalog for Distribution www.infineon.com/distribution Edition July 2006 Published by	Original	b192-h6780-g10-x-7600 sp000012954 sp000013610 sp000017969 +13sp000014627 sp000018085 sp000018086 pef 24628 psb 21493 siemens pmb 6610 47n60c3 psb 21553 pmb7725 pef 22628 pmb6610 psb 50505 pmb 6819	PDF
BCM 4336 Abstract: 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265 Contextual Info: 01.07.2005 11:10 Uhr Seite 2 Shor t Form Catalog for Distribution 2005/06 w w w. i n f i n e o n . c o m / d i s t r i b u t i o n Published by Infineon Technologies AG Ordering No. B192-H6780-G9-X-7600 Printed in Germany LM 060550. Shor t Form Catalog Distribution 2005/06	Original	b192-h6780-g9-x-7600 d-81669 vdsl5100i-e vdsl6100i-e +10bcm 4336 2a0565 c2335 2a280z c1740 bipolar transistor transistor a1267 a1273 transistor c2335 r 2b0565 2b265	PDF
47N10L Abstract: SPI47N10L 47N10 SPB47N10L SPP47N10L Contextual Info: Preliminary data 47N10L 47N10L,47N10L SIPMOS Power-Transistor Product Summary Feature N-Channel VDS Enhancement mode R DS on 26 m Logic Level ID 47 A 175°C operating temperature P-TO262-3-1 P-TO263-3-2 100 V P-TO220-3-1 Avalanche rated	Original	spi47n10l spp47n10l spb47n10l p-to262-3-1 +5p-to263-3-2 p-to220-3-1 q67040-s4177 47n10l 47n10	PDF