46S5455 Search Results

IRF*260

Abstract: irfp260
Contextual Info: International 1@ r]Rectifier 4Ö55452 HEXFET P o w e r M O S F E T INTERNATIONAL • • • • • • □ D lS M 'ît fi 7 7 • I N R PD-9.755 IRFP260 RECTIFIER Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching

transistor c246

Abstract: transistor c245 c245 transistor
Contextual Info: PD - 9.773 International üüRectffier IRGBF30F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features JI* Lc J *.J • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curve

Contextual Info: PD-9.1421 International lö R Rectifier IRGCH50FE TARGET IRGCH50FE IGBT Die in Wafer Form 1200 V Size 5 Fast Speed 5" Wafer Electrical Characteristics Wafer Form D escription Guaranteed (Min/Max) Collector-to-Emitter Saturation Voltage 3.5V Max. Param eter

hf50c120

Contextual Info: International IO R Rectifier PD'2-496 H F 50C 120A C B TARGET HF50C120ACB Hexfred Die in Wafer Form 1200 V Size 50 4" Wafer Electrical Characteristics Wafer Form D e s c rip tio n P a ra m e te r G u a ra n te e d (M in /M a x ) T e s t C o n d itio n s

Contextual Info: PD-9.1443 International l R Rectifier IRGCH50SE TARGET IRGCH50SE IGBT Die in Wafer Form 1200 V Size 5 Standard Speed 5" Wafer Electrical Characteristics Wafer Form D escription G uaranteed (Min/Max) VcE (on) Collector-to-Emitter Saturation Voltage 3.3V Max.

Contextual Info: PD-9.1429 International lö R Rectifier IRGCC30UE TARGET IRGCC30UE IGBT Die in Wafer Form 600 V Size 3 Ultra-Fast Speed 5" Wafer Electrical Characteristics Wafer Form Parameter Description Guaranteed (Min/Max) 3.3V Max. lc = 12A, T j = 25°C, V GE = 15V

Contextual Info: I O R — INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER Diod^ Thyristor 2bE D • and Triac Junctions 4355452 0010280 1 ■ 0h 0$^ T^Q ^O S * POWER SEMICONDUCTOR JUNCTIONS THE APPLICATION AND CUSTOM ASSEMBLY OF POWER SEMICONDUCTOR JUNCTIONS INTRODUCTION

Contextual Info: International IQR Rectifier PD‘2500 H F30A 060A C B TARGET HF30A060ACB Hexfred Die in Wafer Form 600 V Size 30 4" Wafer Electrical Characteristics Wafer Form Param eter V fm BV r I RM Description Guaranteed (Min/Max) Forward Voltage Test Conditions 1.8V Max.

Contextual Info: International I Q R Rectifier PD'2-498 H F 40A 060A C B TARGET HF40A060ACB Hexfred Die in Wafer Form 600 V Size 40 4" Wafer Electrical Characteristics Wafer Form P a ra m e te r D e s c rip tio n V fm BVr Forward V oltage I RM G u a ra n te e d (M in /M a x )

Contextual Info: INTERNATIONAL RECTIFIER 2bE D • 4fi554S2 O O I Q I C H 2 ■ Schottky Rectifiers International Schottky Die @¡*1Rectifier Part Number Die A mm in. Size B mm (In.) Anode Metal Tj Max °C SC090H035A SC090H045A 2.29 (0.090) 2.29 (0.090) 2.03 (0.080) 2.03 (0.080)

MT29VZZZAD8DQKSM-053 W ES.9D8

Contextual Info: International ICR Rectifier pm.-mìi IRGCH30SE TARGET IRGCH30SE IGBT Die in Wafer Form 1200 V Size 3 Standard Speed 5” Wafer Electrical Characteristics Wafer Form D escription Guaranteed (Min/Max) V c e (on) Collector-to-Emitter Saturation Voltage 3.3V Max.

Contextual Info: International IO R Rectifier PD'2'501 H F 10A 060A C B TARGET HF10A060ACB Hexfred Die in Wafer Form 600 V Size 10 4" Wafer Electrical Characteristics Wafer Form Param eter Description G uaranteed (Min/Max) Test Conditions Forward Voltage 1.8V Max. bvr

Contextual Info: International IQ R Rectifier PD-9.1442 IRGCH40SE TARGET IRGCH40SE IGBT Die in Wafer Form 1200 V Size 4 Standard Speed 5" Wafer Electrical Characteristics Wafer Form P a ra m e te r D e s c rip tio n G u a ra n te e d (M in /M a x ) VcE(on) C ollector-to-Em itter Saturation V oltage

Contextual Info: PD-9.1419 International IQ R Rectifier IRGCH70KE TARGET IRGCH70KE IGBT Die in Wafer Form 1200 V Size 7 Ultra-Fast Speed 5" Wafer Electrical Characteristics Wafer Form Description G uaranteed (Min/Max) VcE(on) Param eter Collector-to-Emitter Saturation Voltage

Contextual Info: International IQR Rectifier pd-s.uss IRGCH50KE TARGET IRGCH50KE IGBT Die in Wafer Form 1200 V Size 5 Ultra-Fast Speed 5" Wafer Electrical Characteristics Wafer Form D escription Guaranteed (Min/Max) VcE(on) Collector-to-Emitter Saturation Voltage 3.8V Max.

Contextual Info: INTERNATIONAL RECTIFIER 4ÖSS4S5 GQ1G151 3 • SbE D International Rectifier Rectifiers Fast Recovery T - ô 3-¿2.3 _ Snubber and Free Wheeling Diodes >F AV <@ Tc Part Number Vr r m R18CF25AA R18SF25AA R23DF25AA R23AF25AA R34BF45 R52KF45 2500 2500 2500 2500

Contextual Info: International I Q R Rectifier PD-9.1424 IRGCC50KE TARGET IRGCC50KE IGBT Die in Wafer Form ' 600 V Size 5 Ultra-Fast Speed 5" Wafer Electrical Characteristics Wafer Form Description Guaranteed (Min/Max) VcE (on) Collector-to-Emltter Saturation Voltage 3.0V Max.

Contextual Info: International pd-2 .6 08 lO R Rectifier_ target H F30C 060A C E HF30C060ACE Hexfred Die in W afer Form 600 V Size 30 5" Wafer Electrical Characteristics W afer Form Param eter Description Guaranteed (Min/Max) 1.7 V Max. Test Conditions V fm F orw ard V oltag e

Contextual Info: International is s r Rectifier pd-9.«3i IRGCC20UE TARGET IRGCC20UE IGBT Die in Wafer Form 600 V Size 2 Ultra-Fast Speed 5" Wafer Electrical Characteristics Wafer Form Description G uaranteed (M in/M ax) V ce (on) Parameter Collector-to-Emitter Saturation Voltage

Contextual Info: International TOR Rectifier PM-'4!1 IRGCH50ME TARGET IRGCH50ME IGBT Die in Wafer Form 1200 V Size 5 Fast Speed 5" Wafer Electrical Characteristics Wafer Form D e s c rip tio n G u a ra n te e d (M in /M ax) V c e (on) Collector-to-Em itter Saturation Voltage

Contextual Info: PD-9.1430 International lö R Rectifier IRGCC30FE TARGET IRGCC30FE IGBT Die in Wafer Form 600 V Size 3 Fast Speed 5" Wafer Electrical Characteristics Wafer Form D e s c rip tio n G u a ra n te e d (M in /M a x ) V c E (o n ) P a ra m e te r Collector-to-Em itter Saturation Voltage

Contextual Info: INTERNATIONAL RECTIFIER b5E D • 4055452 0[]lfl:L73 ETT M I N R Data Sheet No. PD-6.014 INTERNATIONAL. RECTIFIER IO R IR 2110C HIGH VOLTAGE MOS GATE DRIVER General Description The IR2110C is the die form of the IR2110 refer to D ata S h e et No. PD-6.011B ; a high voltage, high speed

Contextual Info: International pc-9.1428 IRGCC40FE IQRRectifi Gf_ TARGET IRGCC40FE IGBT Die in Wafer Form 600 V Size 4 Fast Speed 5" Wafer Electrical Characteristics Wafer Form P a ra m e te r D e s c rip tio n G u a ra n te e d (M in /M a x ) VCE (on) Cotlector-to-Em itter Saturation Voltage

Contextual Info: International IOR Rectifier PD-9.1427 IRGCC40KE TARGET IRGCC40KE IGBT Die in Wafer Form 600 V Size 4 Ultra-Fast Speed 5 " Wafer Electrical Characteristics Wafer Form Param eter Description G uaranteed (Min/Max) VcE (on) Collector-to-Emltter Saturation Voltage