IRGCH50KE Search Results

IRGCH50KE Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
IRGCH50KE		International Rectifier	IGBT	Original	PDF	18.44KB	1

IRGCH50KE Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
IRGPH50K Abstract: igbt 20A 1200v IRGCH50KE Contextual Info: PD-9.1439 TARGET IRGCH50KE IRGCH50KE IGBT Die in Wafer Form C 1200 V Size 5 Ultra-Fast Speed 5" Wafer G E Electrical Characteristics Wafer Form Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage Colletor-to-Emitter Breakdown Voltage	Original	IRGCH50KE IRGCH50KE IRGPH50K IRGPH50K igbt 20A 1200v	PDF
IRGPH50K Abstract: IRGCH50KE Contextual Info: Previous Datasheet Index Next Data Sheet PD-9.1439 TARGET IRGCH50KE IRGCH50KE IGBT Die in Wafer Form C 1200 V Size 5 Ultra-Fast Speed 5" Wafer G E Electrical Characteristics Wafer Form Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage	Original	IRGCH50KE IRGCH50KE IRGPH50K IRGPH50K	PDF
Contextual Info: International IQR Rectifier pd-s.uss IRGCH50KE TARGET IRGCH50KE IGBT Die in Wafer Form 1200 V Size 5 Ultra-Fast Speed 5" Wafer Electrical Characteristics Wafer Form D escription Guaranteed (Min/Max) VcE(on) Collector-to-Emitter Saturation Voltage 3.8V Max.	OCR Scan	IRGCH50KE IRGCH50KE 250pA, 250pA	PDF

Catalog Datasheet

Type

Document Tags

PDF

IRGPH50K

Abstract: igbt 20A 1200v IRGCH50KE
Contextual Info: PD-9.1439 TARGET IRGCH50KE IRGCH50KE IGBT Die in Wafer Form C 1200 V Size 5 Ultra-Fast Speed 5" Wafer G E Electrical Characteristics Wafer Form Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage Colletor-to-Emitter Breakdown Voltage

Original

IRGCH50KE IRGCH50KE IRGPH50K IRGPH50K igbt 20A 1200v

PDF

IRGPH50K

Abstract: IRGCH50KE
Contextual Info: Previous Datasheet Index Next Data Sheet PD-9.1439 TARGET IRGCH50KE IRGCH50KE IGBT Die in Wafer Form C 1200 V Size 5 Ultra-Fast Speed 5" Wafer G E Electrical Characteristics Wafer Form Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage

Original

IRGCH50KE IRGCH50KE IRGPH50K IRGPH50K

PDF

Contextual Info: International IQR Rectifier pd-s.uss IRGCH50KE TARGET IRGCH50KE IGBT Die in Wafer Form 1200 V Size 5 Ultra-Fast Speed 5" Wafer Electrical Characteristics Wafer Form D escription Guaranteed (Min/Max) VcE(on) Collector-to-Emitter Saturation Voltage 3.8V Max.

OCR Scan

IRGCH50KE IRGCH50KE 250pA, 250pA

PDF