HF30C060ACE Search Results

Contextual Info: International pd-2 .608 lO R Rectifier_ target H F30C 060A C E HF30C060ACE Hexfred Die in W afer Form 600 V Size 30 5" Wafer Electrical Characteristics W afer Form Parameter Description V fm Forward Voltage BV r Ir m Guaranteed (Min/Max) Test Conditions

HF30C060ACE

Abstract: HFA15TB60
Contextual Info: PD - 2.608 TARGET HF30C060ACE Hexfred Die in Wafer Form HF30C060ACE 600 V Size 30 5" Wafer Electrical Characteristics Wafer Form Parameter Description VFM Forward Voltage BVR Reverse Breakdown Voltage IRM Reverse Leakage Current Guaranteed (Min/Max) Test Conditions

Contextual Info: International pd-2 .6 08 lO R Rectifier_ target H F30C 060A C E HF30C060ACE Hexfred Die in W afer Form 600 V Size 30 5" Wafer Electrical Characteristics W afer Form Param eter Description Guaranteed (Min/Max) 1.7 V Max. Test Conditions V fm F orw ard V oltag e

IN1190A diode

Abstract: an 80771 hfa30pa60 SCR gate drive circuit A6F diode HFA120FA60 HF50A060 IN1190 DT93-1 HFA16PB120
Contextual Info: Revised 5/11/99 www.irf.com Rectifiers / Thyristors Catalog of Available Documents IR ProCenter Fax-On-Demand 310 252-7100 Standard Recovery Diodes Description Datasheets 1N1183 - IN1190 Series 1N1183A - IN1190A Series 1N1199A - 1N1206A Series 1N2054 thru 1N2068 Series

SCR gate drive circuit

Abstract: an 80771 IN1190 IN1190A IN1190A diode 20509 Diode 31DQ HFA25TB60 SD400N IR 31DQ 03
Contextual Info: Revised 8/27/98 www.irf.com Rectifiers / Thyristors Catalog of Availble Documents IR ProCenter Fax-On-Demand 310 252-7100 Standard Recovery Diodes Description Datasheets 1N1183 - IN1190 Series 1N1183A - IN1190A Series 1N1199A - 1N1206A Series 1N2054 thru 1N2068 Series