4564 Search Results

BREL International Components

Contextual Info: BREL INTERNATIONAL COMPONENTS 1621 WEST UNIVERSITY PARKWAY, SARASOTA, FL 34243 SALES: 800 237-4564 PHONE: (941) 355-9791 FAX: (941) 355-1530 CLOCK OSCILLATOR – DUAL OUTPUT CMOS 23

HC49S

Abstract: HC-49S brel
Contextual Info: BREL INTERNATIONAL COMPONENTS 1621 WEST UNIVERSITY PARKWAY, SARASOTA, FL 34243 SALES: 800 237-4564 PHONE: (941) 355-9791 FAX: (941) 355-1530 HC49S/RESISTANCE WELD – LOW PROFILE CRYSTAL 9

fopf

Abstract: LC587004 LC587006 N1C TRANSISTOR LC587008 LC58E7008 KBR-800H M357 KBR800
Contextual Info: Ordering n u m b e r: EN % 4564 CMOS 1C No. & 4 5 6 4 LC58E7008 On-Chip EPROM Microcomputer 4-Bit Single Chip Microcontroller with LCD Driver, 16 Kbytes of EPROM and 2 Kbits of RAM On-Chip Preliminary Overview The LC58E7008 is an on-chip EPROM microcontroller in

Contextual Info: Adapters QUICK REFERENCE GUIDE FREQUENCY RANGE GHz CONNECTOR MODEL NO. PAGE NO. FREQUENCY RANGE (GHz) 0.3-40 2.9mm (K*) 4568 203 SMA 4563 203 SMA Type N 4564 562 203 203 MODEL NO. CONNECTOR PAGE NO. DC Blocks and Audio Interference Suppressors Adapters DC-26.5

IC R2A3 DATASHEET FREE

Abstract: R2A3 IC R2A3 R2A11 D23-D26 r2a1 D8-D13 IC R2A3 DATASHEET R2A3 02 mark d23
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT MC-4564EC727 64M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE Description The MC-4564EC727 is a 67,108,864 words by 72 bits synchronous dynamic RAM module on which 36 pieces of 128 M SDRAM: µPD45128441 are assembled.

E014

Abstract: upd4564163g5a10b
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µ4564441, 4564841, 4564163 64M-bit Synchronous DRAM 4-bank, LVTTL Description The µ4564441, 4564841, 4564163 are high-speed 67,108,864-bit synchronous dynamic random-access memories, organized as 4,194,304 x 4 × 4, 2,097,152 × 8 × 4, 1,048,576 ×16 × 4 word × bit × bank , respectively.

GP035

Abstract: CF-110VH-2A PCN-112D3MHZ PCN-104 118D3 PCN-103D3MHZ PCN-103D3M PMC35 CF-110VH GP-035
Contextual Info: Qualification Test Report 認定試験報告書 501-79817 Was S-45624~45645 October 23, 2007 Rev. A1 PCＮ-D3M リレー PCＮ-D3M Relay １.はじめに Introduction 1.1 目 的 Purpose 本試験はリレー製品規格書 108-79817 Rev. A に規定された性能必要条件に合致しているか

Contextual Info: IN DU CT AN CE TO LE RA NC Q E MI % NI MU M TE ST FR EQ UE SR NC F Y MI (M NI Hz M DC UM ) MA RES (M Hz XI IST ) M A CU UM NC E ( R MA RE OHM S) XI NT MU R M ATI (A NG ) NU MB ER Radial Lead Inductors PA RT Series 4554 & 4564 SERIES 4554 Millimeters 8.64 Max.

M1330

Abstract: ee 2020
Contextual Info: of Contents EMI/RFI Suppressors Radial Leaded Series 2020 Series 2534 5 4 6 10 11 12 Series Series Series Series 2727 4445 4554 4564 Series 4669 Series 9405 Series 9406 60 63 61 62 64 64 65 66 66 13 14 15 16 18 17 27 28 29 30 39 22 24 25 26 39 31 32 7 8 33

MC-4564DC726

Abstract: MC-4564DC726F-A10 PD45128441 PD45128441G5
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT MC-4564DC726 64 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE Description The MC-4564DC726 is a 67,108,864 words by 72 bits synchronous dynamic RAM module on which 36 pieces of 128 M SDRAM: µPD45128441 are assembled.

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT ju P D 4 5 6 4 4 4 1 ,4 5 6 4 8 4 1 , 4 5 6 4 1 6 3 64 M-bit Synchronous DRAM 4-bank, LVTTL Description The ,4564441, 4564841, 4564163 are high-speed 67,108,864-bit synchronous dynam ic random-access memories, organized as 4,194,304x4x4, 2,097,152x8x4, 1,048,576x16x4 word x bit x bank , respectively.

d4564841

Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT ;iP D 4 5 6 4 4 4 1 , 4 5 6 4 8 4 1 , 4 5 6 4 1 6 3 64M-bit Synchronous DRAM 4-bank, LVTTL Description The ,4564441, 4564841, 4564163 are high-speed 67,108,864-bit synchronous dynamic random-access memories, organized as 4,194,304 x 4 x 4, 2,097,152 x 8 x 4, 1,048,576 x16 x 4 word x bit x bank , respectively.

TA 1319 AP

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µ4564441-A75, 4564841-A75 64M-bit Synchronous DRAM, 133MHz 4-bank, LVTTL Description The µ4564441-A75, 4564841-A75 are high-speed 67,108,864-bit synchronous dynamic random-access memories, organized as 4,194,304 x 4 × 4 and 2,097,152 × 8 × 4 word × bit × bank , respectively.

2805B

Abstract: JN28
Contextual Info: M ierosem i Corp. y The dioOe experts Ì SC O T T SD A L E , A Z SANTA A N A , CA 1N 2804 thru 1N 2846B and 1N 4 5 57 B thru 1N 4564B hor more information call: 602 941-6300 FEATURES . SILICON 50 WATT ZENER DIODES ZENER VOLTAGE 3 .9V to 200 V • A V A ILA B LE IN TOLERANCES OF ± 5 % , ± 1 0 % and ± 2 0 %

inductor 2r2

Abstract: RCH-4564 RCH-4564NP-1R5M RCH-4564NP-2R2M RCH-4564NP-2R7M
Contextual Info: Power Inductor< Pin Type: RCH Series> Type: RCH-4564 ◆ Product Description ・5mm Max.φ, 6.5mm Max. Height. ・Inductance Range: 1.5 H～1.6mH ・Rated current range: 0.08～3.2A ・In addition to the standard versions of inductors shown here, custom inductors

Contextual Info: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT /4564441, 4564841 64M-bit Synchronous DRAM 4-bank, LVTTL Description T h e ¿¿4564441,4664641 are high-speed 67,108,864-bit s y n c h ro n o u s d y n a m ic ra n d o m -a ccess m em ories, org a n ize d as 4,194,304x4x4 and 2,097,152x8x4 wordxbttxbank , respectively.

Contextual Info: Series 4554 & 4564 Radial Lead Inductors A B C D E Inches 0.34 Max. 0.433 Max. 0.200 Norn. 0.200 Norn. 0.024 Norn. Millimeters 8.5 Max. 11 Max. 5.0 Norn. 5.0 Norn. 0.62 Norn. Series 4564 A B C D E Inches 0.315 Max. 0.440 Max. 0.200 Norn. 0.200 Norn. 0.028 Norn.

Contextual Info: 123245663789ABC77 7 B771615B58851564981 1 1 1 !""1A"7851 1 F7#7"19$1 17658%A51 1 &92192581A964B7961 1 ' A5""561"96#158B147"71 1 F! 151A*#51E185%"92149"58"51 1 !"378EE2#7 1 $1 /51 6521 /B771 61 5B58851 4564981 9%1

680MH

Contextual Info: IN DU CT AN CE TO LE RA NC Q E MI % NI MU M TE ST FR EQ UE SR NC F Y MI (M NI Hz MU DC ) M MA RES (M Hz XI IST ) M A CU UM NC E (O R HM MA RE S XI NT MU R ) M ATI (A NG ) NU MB ER Radial Lead Inductors PA RT Series 4554 & 4564 SERIES 4554 Millimeters 8.64 Max.

Contextual Info: BRIGHT VIEW LED DIGIT DISPLAY ELECTRONICS CO.,LTD BVN-4564E2/9564E2 DESCRIPTION Dice Material : GaAsP/GaP Orange Light Color : Orange Color Lens Color : Milky Diffused Surface Color : Gray PACKAGE CONFIGURATION 8. 1 Tolerance : ± 0.25 mm 2 DIGIT 1 8 3 4 A

Contextual Info: BRIGHT VIEW LED DIGIT DISPLAY ELECTRONICS CO.,LTD BVN-4564G2/9564G2 DESCRIPTION Dice Material : GaP/GaP Green Light Color : Green Color Lens Color : Milky Diffused Surface Color : Gray PACKAGE CONFIGURATION 8. 1 Tolerance : ± 0.25 mm 2 DIGIT 1 8 3 4 A 18.8

D4512

Abstract: d4512844 D29D31 DQ200-V D45128
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT MC-4564EC726 64 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE Description The M C-4564EC726 is a 67,108,864 words by 72 bits synchronous dynamic RAM module on which 36 pieces of 128 M SDRAM: ,uPD45128441 are assembled.

Contextual Info: BREL INTERNATIONAL COMPONENTS 1621 WEST UNIVERSITY PARKWAY, SARASOTA, FL 34243 SALES: 800 237-4564 PHONE: (941) 355-9791 FAX: (941) 355-1530 CLOCK OSCILLATOR – VARIABLE FREQUENCY TTL 24

Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT ;iP D 4 5 6 4 4 4 1 , 4 5 6 4 8 4 1 , 4 5 6 4 1 6 3 64M-bit Synchronous DRAM 4-bank, LVTTL Description The ,4564441, 4564841, 4564163 are high-speed 67,108,864-bit synchronous dynamic random-access memories, organized as 4,194,304 x 4 x 4, 2,097,152 x 8 x 4, 1,048,576 x16 x 4 word x bit x bank , respectively.