45168 Search Results

MPS9426C

Abstract: motorola sc 7812 MPS9426 MC14516 7812 ck nte 7183 NTE 7803 CK 7815 ma 7812
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M C I 45168 M C I 45169 Advance Information Dual PLLs for 46/49 MHz Cordless Telephones CMOS P SUFFIX PLASTIC DIP C ASE 648 T hese devices are dual p ha se-locked loop Ire q u en cy synthesizers intended fo r use prim a rily in 4 6/4 9 M H z co rdle ss p hones w ith up to 15 channels. These

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD4516421-PC, 4516821-PC, 4516161-PC 16M-bit Synchronous DRAM for PC SDRAM Lite Description The µPD4516421-PC, 4516821-PC, 4516161-PC are high-speed 16,777,216-bit synchronous dynamic randomaccess memories, organized as 2,097,152 x 4 × 2, 1,048,576 × 8 × 2 and 524,288 × 16 × 2 word × bit × bank ,

d4516161

Abstract: NEC 1216 D451616 4516161 IC-3394 ba6x T8836 D4516161GS d4516 UPD4516161
Contextual Info: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT ¿¿PD4516421, 4516821, 4516161 16M-bit Synchronous DRAM Description The /¿PD4516421, 4516821, 4516161 are high-speed 16,777,216-bit synchronous dynamic random-access memories, organized as 2,097,152x4x2, 1,048,576x8x2 and 524,288x16x2 wordxbitxbank , respectively.

Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT /¿PD4516421, 4516821, 4516161 16M-bit Synchronous DRAM D escrip tio n The /iPD4516421, 4516821, 4516161 are high-speed 16,777,216-bit synchronous dynam ic random-access m em ories, organized as 2,097,152x4x2, 1,048,576x8x2 and 524,288x16x2 w ordxbitxbank , respectively.

a2-xqa

Abstract: IC-3394
Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT juPD 4516421 , 4516821 , 4516161 16M-bit Synchronous DRAM Description The ¿iPD4516421, 4516821, 4516161 are high-speed 16,777,216-bit synchronous dynamic random-access memories, organized as 2,097,152 x 4 x 2,1,048,576 x 8 x 2 and 524,288 x 16 x 2 word x bit x bank , respectively.

M12939EJ3V0DS00

Abstract: uPD4516421AG5-A10B-9NF uPD4516821AG5-A10-9NF uPD4516161AG5-A10B-9NF 4516161a PD4516821
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD4516421A, 4516821A, 4516161A for Rev.P 16M-bit Synchronous DRAM 2-banks, LVTTL 2 Description The µPD4516421A, 4516821A, 4516161A are high-speed 16,777,216-bit synchronous dynamic random-access memories, organized as 2,097,152 x 4 × 2, 1,048,576 × 8 × 2, 524,288 × 16 × 2 (word × bit × bank , respectively.

d4516161

Abstract: MPD4516421
Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT juPD4516421, 4516821, 4516161 16M-bit Synchronous DRAM Description T he /¿PD4516421, 451 6821, 4516161 are high-speed 16,777,216 -bit s y nchrono us dyna m ic random -access m em o ries, org a n ize d a s 2,097,152 x 4 x 2, 1,048,576 x 8 * 2 and 524 ,288 x 16 x 2 w ord x bit * ban k}, respectively.

i8085

Abstract: Nec AC 160
Contextual Info: D A TA S H E E T NEC MOS INTEGRATED CIRCUIT jiPD4516421, 4516821, 4516161 16M-bit Synchronous DRAM Description T h e //PD4516421, 4516821, 4516161 are high-speed 16,777,216-bit sy n c h ro n o u s d y n a m ic ra n d o m -a cce ss m e m o rie s, o rg an ized as 2 ,0 9 7 ,1 5 2 x4 x2 , 1,048,576x8x2 and 5 2 4,28 8x1 6x2 w o rd xb itx b a n k , re sp e ctiv e ly .

Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT _ _ _ _ _ _ _ //¿PD4516421-PC, 4516821-PC, 4516161-PC 16M-bit Synchronous DRAM for PC SDRAM Lite D e s c rip tio n The //PD4516421-PC, 4516821-PC, 4516161-PC are high-speed 16,777,216-bit synchronous dynamic randomaccess memories, organized as 2,097,152 x 4 x 2, 1,048,576 x 8 * 2 and 524,288 x 16 x 2 word x bit x bank ,

A91A

Abstract: uPD4516161AG5-A10-9NF nec 44pin NEC 4516821 TNC 24 mk 2 uPD4516161AG5-A80-9NF uPD4516161AG5-A10 NEC MEMORY
Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT /¿PD4516421A, 4516821 A, 4516161A 16M-bit Synchronous DRAM Description The ¿¡PD4516421 A, 4516821 A, 4516161A are high-speed 16,777,216-bit synchronous dynam ic random -access mem ories, organized as 2,097,152 x 4 x 2, 1,048,576 x 8 x 2 and 524,288 x 16 x 2 word x bit x bank , respectively.

wp1a

Abstract: IC-3394 4516161 UPD4516421G5-A12-7JF BD3/1/TX13/7.9/PP10/UPD4516421G5-A12-7JF
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD4516421, 4516821, 4516161 16M-bit Synchronous DRAM Description The µPD4516421, 4516821, 4516161 are high-speed 16,777,216-bit synchronous dynamic random-access memories, organized as 2,097,152 x 4 × 2, 1,048,576 × 8 × 2 and 524,288 × 16 × 2 word × bit × bank , respectively.

BA1T12

Abstract: BA1T11 BA2T13 ba6t17 PD4516161G5 A10 7JF PD4516821G5 PD4516161 1994P PD4516421G5
Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD4516421, 4516821, 4516161 16M-bit Synchronous DRAM Description The µPD4516421, 4516821, 4516161 are high-speed 16,777,216-bit synchronous dynamic random-access memories, organized as 2,097,152x4×2, 1,048,576×8×2 and 524,288×16×2 word×bit×bank , respectively.

M12939EJ3V0DS00

Abstract: nec 44pin uPD4516421AG5-A10B-9NF uPD4516821AG5-A10B-9NF P-1222 TEST UPD4516161AG5
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD4516421A, 4516821A, 4516161A for Rev. P 16M-bit Synchronous DRAM Description The µPD4516421A, 4516821A, 4516161A are high-speed 16,777,216-bit synchronous dynamic random-access memories, organized as 2,097,152 x 4 × 2, 1,048,576 × 8 × 2 and 524,288 × 16 × 2 word × bit × bank , respectively.

uPD4516161AG5-A80-9NF

Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT juPD4516421 A, 4516821 A, 4516161A for Rev. P 16M-bit Synchronous DRAM Description The /¿PD4516421 A, 4516821 A, 4516161A are high-speed 16,777,216-bit synchronous dynamic random-access memories, organized as 2,097,152 x 4 x 2, 1,048,576 x 8 x 2 and 524,288 x 16 x 2 word x bit x bank , respectively.

nec d4516

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT /¿PD4516421, 4516821, 4516161 16M-bit Synchronous DRAM Description The ¿tPD4516421, 4516821, 4516161 are high-speed 16,777,216-bit synchronous dynam ic random-access m em ories, organized as 2,097,152x4x2, 1,048,576x8x2 and 524,288x16x2 w ordxbitxbank , respectively.

Contextual Info: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT /;PD4516421, 4516821, 4516161 16M-bit Synchronous DRAM D escription The /¿PD4516421, 4516821, 4516161 are high-speed 16,777,216-bit synchronous dynamic random-access m emories, organized as 2,097,152x4x2, 1,048,576x8x2 and 524,288x16x2 wordxbitxbank , respectively.

M10187EU1V0UM00

Abstract: VR300 AP-49 intel 945 motherboard schematic diagram R300 R600 VR4400 intel 956 motherboard CIRCUIT diagram op amp 741 model hSpice NEC 4516821
Contextual Info: User’s Manual 16M-Bit Synchronous DRAM µPD4516421, 4516821, 4516161 June 1995 Document No. M10187EU1V0UM00  Copyright 1995 NEC Electronics Inc. All Rights Reserved This document was created with FrameMaker 4.0.2 M1 01 87 EU 1V 0U M0 16M-Bit Synchronous DRAM User’s Manual

Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT /¿PD4516421, 4516821, 4516161 16M-bit Synchronous DRAM Description The /¿PD4516421, 4516821, 4516161 are high-speed 16,777,216-bit synchronous dynamic random-access memories, organized as 2,097,152 x 4 x 2 , 1,048,576 x 8 x 2 and 524,288 x 16 x 2 word x bit x bank , respectively.

D4516821G5-A12

Abstract: nec 14t t4 bst 1046 xrba IC-3394 ba6x PD4516421 D4516821 nec 44pin SN1049
Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT fd>D4516421, 4516821, 4516161 16M-bit Synchronous DRAM Description The jiPD4516421, 4516821, 4516161 are high-speed 16,777,216-bit synchronous dynam ic random-access memories, organized as 2,097,152x4x2, 1,048,576x8x2 and 524,288x16x2 wordxbitxbank , respectively.

uPD4516821AG5-A10BL-9NF

Abstract: UPD4516161AG5-A
Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD4516421A, 4516821A, 4516161A for Rev. B, P 16M-bit Synchronous DRAM Description The µPD4516421A, 4516821A, 4516161A are high-speed 16,777,216-bit synchronous dynamic random-access memories, organized as 2,097,152 x 4 × 2, 1,048,576 × 8 × 2 and 524,288 × 16 × 2 word × bit × bank , respectively.

UPD4516161AG5A80-9NF

Abstract: 4516161a
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD4516421A, 4516821A, 4516161A 16M-bit Synchronous DRAM Description The µPD4516421A, 4516821A, 4516161A are high-speed 16,777,216-bit synchronous dynamic random-access memories, organized as 2,097,152 x 4 × 2, 1,048,576 × 8 × 2 and 524,288 × 16 × 2 word × bit × bank , respectively.

IC-3394

Abstract: NEC 4516821 PD4516421 UPD4516161G5A10 tsop 66 2M42 4516421G5-A12 4516821G5
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD4516421, 4516821, 4516161 16M-bit Synchronous DRAM Description The µ PD4516421, 4516821, 4516161 are high-speed 16,777,216-bit synchronous dynamic random-access memories, organized as 2,097,152x4×2, 1,048,576×8×2 and 524,288×16×2 word×bit×bank , respectively.

NEC 977

Contextual Info: D A T A SHEET NEC MOS INTEGRATED CIRCUIT jUPD4516421, 4516821, 4516161 16M-bit Synchronous DRAM D escription The jj PD4516421, 4516821, 4516161 are high-speed 16,777,216-bit synchronous dynam ic random -access m em ories, organized as 2,097,152x4x2, 1,048,576x8x2 and 524,288x16x2 wordxbitxbank , respectively.

4516821G5

Abstract: 512KX16X2
Contextual Info: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT ¿¿PD4516421-PC, 4516821-PC, 4516161-PC 16M-bit Synchronous DRAM for PC SDRAM Lite Description ThefiPD 4516421-PC , 4516821-PC, 4516161-PC are high-speed 16,777,216-bit synchronous dynam ic randomaccess m em ories, organized as 2,097,152x4x2, 1,048,576x8x2 and 524,288x16x2 wordxbitxbank , respectively.