45.77 Search Results

809-SL45.77M-03

Abstract: 45.77 809SL
Contextual Info: Oscilent Corporation IF SAW Filter | 809-45.77M-03 Page 1 of 2 IF SAW Filter Part Number Package Application Last Modified 809-45.77M-03 9.1 x 4.8 SMD Mobile Communication Jan. 01, 2007 TYPE : 45.77 MHz Low Loss SAW Filter 3.5 MHz Bandwidth PART NUMBER :

4440 amplifier

Contextual Info: ZHL-5W-1 Amplifier Typical Performance Data 23V dB 24V 25V (:1) 24V (:1) 24V Pout at 1dB Comp. (dBm) 24V 44.82 45.77 45.99 46.37 46.26 46.13 46.12 45.76 45.32 44.40 44.72 46.08 45.69 43.67 42.93 44.80 45.76 45.96 46.40 46.32 46.22 46.16 45.80 45.43 44.48

7M9106

Abstract: TQP7M9106 L4024 dap sot 23-5 06035J2R4ABSTR PFB10
Contextual Info: TQP7M9106 2W High Linearity Amplifier Applications Repeaters BTS Transceivers BTS High Power Amplifiers CDMA / WCDMA / LTE General Purpose Wireless 24-pin QFN 4x4mm SMT Package GND/NC GND/NC GND/NC 19 20 GND/NC 21 22 GND/NC 5 14 6 13 General Description Pin Configuration

Contextual Info: Coaxial Frequency Mixer ZLW-3 Level 7 LO Power +7 dBm 0.025 to 200 MHz Maximum Ratings Operating Temperature -55°C to 100°C Storage Temperature -55°C to 100°C RF Power 50mW IF Current 40mA Features • low conversion loss, 4.61 dB typ. • high L-R isolation, 45 dB typ., L-I, 40 dB typ.

ZX80-DR230

Abstract: Rf switch spdt
Contextual Info: RF Switch SPDT ZX80-DR230+ Typical Performance Data INSERTION LOSS @ Vdd=+3V OVER TEMPERATURE FREQ MHz RF COM-RF1 (dB) RF COM-RF2 (dB) STATE 3* STATE 2* ISOLATION @ Vdd=+3V OVER TEMPERATURE FREQ (MHz) -40°C +25°C +85°C -40°C +25°C +85°C RF COM-RF1

F5401

Abstract: io 1207 100MHZ 54-PIN F5402
Contextual Info: PRELIMINARY SPACE ELECTRONICS INC. 1 GIGABIT SYNCHRONOUS DRAM SPACE PRODUCTS VDD 1 97SD10004RP 54 VSS CS 7 NC VDDQ VSSQ CS 6 NC DQ0 DQ3 VSSQ VDDQ CS 5 NC CS 4 NC VDDQ VSSQ CS 3 NC DQ1 DQ2 VSSQ VDDQ CS 2 VDD VSS CS 1 NC/RFU WE DQM NC/A13 CAS CLK RAS CKE CS 0

K4S280832D

Contextual Info: K4S280832D CMOS SDRAM 128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL Rev. 0.1 Sept. 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.1 Sept. 2001 K4S280832D CMOS SDRAM Revision History Revision 0.0 July, 2001

K4S280432F

Abstract: K4S281632F
Contextual Info: SDRAM 128Mb F-die x4, x8, x16 CMOS SDRAM 128Mb F-die SDRAM Specification Revision 1.2 May 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.2 May 2004 SDRAM 128Mb F-die (x4, x8, x16) CMOS SDRAM Revision History

K4S280432C

Abstract: K4S280432D
Contextual Info: K4S280432D CMOS SDRAM 128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL Rev. 0.1 Sept. 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev.0.1 Sept. 2001 K4S280432D CMOS SDRAM Revision History Revision 0.0 Mar., 2001

K4S561632C-TC/L75

Abstract: K4S561632C K4S561632C-TC K4S561632C-TC/L7C
Contextual Info: K4S561632C CMOS SDRAM 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL Revision 0.4 Sept. 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.4 Sept. 2001 K4S561632C CMOS SDRAM Revision History

rts 993-2

Contextual Info: H O L T E K H H T 1625 r RAM Mapping 64x8 LCD Controller for I/O ¡iC LCD Controller Product Line Selection Table HT162X HT1620 HT1621 COM 4 4 8 8 8 8 16 16 16 SEG 32 32 32 32 48 64 48 64 64 V V V V V V B u ilt-in Ose. C rystal Ose. V HT1622 HT16220 HT1623 HT1625 HT1626 HT1627 HT16270

Contextual Info: f Y H T1625 RAM Mapping 64x8 LCD Controller for I/O liC H B L T E K Features • R/W address auto increment • Two selectable buzzer frequencies 2kHz/4kHz • Power down command reduces power consumption • Software configuration feature • Data mode and Command mode instructions

Contextual Info: Coaxial Frequency Mixer Level 7 LO Power +7 dBm Maximum Ratings Operating Temperature -55°C to 100°C Storage Temperature -55°C to 100°C RF Power 50mW IF Current 40mA • low conversion loss, 4.61 dB typ. • high L-R isolation, 45 dB typ. • rugged shielded case

Contextual Info: Plug-In Frequency Mixer 0.025 to 200 MHz Level 7 LO Power +7 dBm Maximum Ratings SRA-3+ Features Operating Temperature -55°C to 100°C Storage Temperature -55°C to 100°C RF Power 50mW IF Current 40mA Permanent damage may occur if any of these limits are exceeded.

K4S280432C

Abstract: K4S280432D
Contextual Info: K4S280432D CMOS SDRAM 128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL Rev. 0.0 Mar. 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.0 Mar. 2001 K4S280432D CMOS SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM

Contextual Info: TOSHIBA Original CMOS 16-Bit Microcontroller TLCS-900/L1 Series TMP91C025FG Semiconductor Company Preface Thank you very much for making use of Toshiba microcomputer LSIs. Before use this LSI, refer the section, “Points of Note and Restrictions”. Especially, take care below cautions.

9932

Abstract: HT1620 HT1621 HT1622 HT16220 HT1623 HT1625 HT1626 HT1627 HT16270
Contextual Info: HT1625 RAM Mapping 64x8 LCD Controller for I/O µC Features • • • • • • • • • • • • • Operating voltage: 2.7V~5.2V Built-in RC oscillator External 32.768kHz crystal or 32kHz frequency source input Standby current < 2µA 1/4 bias, 1/8 duty, frame frequency is 64Hz

Contextual Info: Mini-Circuits - Specification for Frequency Mixer - SRA-3 Frequency Mixers Notes: • +7dBm LO, up to +1 dBm RF • Absolute maximum power, voltage and current ratings: SRA-3 a. RF power, 50mW b. Peak IF current, 40mA print this page • General Quality Control Procedures and Environmental

4017 pin configuration

Contextual Info: Mini-Circuits - Specification for Amplifier - MNA-6 Amplifier print this page MNA-6 Frequency GAIN, dB Maximum Power, dBm Dynamic Range VSWR MHz DC Power NF dB Typ. IP3 dBm Typ. Thermal resistance CurØjc In Out rent Volt V. °C/W Typ. Typ. (mA) 500-2500

Contextual Info: HY57V281620HC L/S T 4 Banks x 2M x 16bits Synchronous DRAM DESCRIPTION The Hynix HY57V281620HC(L/S)T is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V281620HC(L/S)T is organized as 4banks of 2,097,152x16

K4S561632C

Contextual Info: K4S561632C CMOS SDRAM 256Mbit SDRAM Extended Temp Support 4M x 16bit x 4 Banks Synchronous DRAM LVTTL Revision 0.1 Sept. 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev.0.1 Sept.2001 K4S561632C CMOS SDRAM

HT1622

Abstract: HT16220 HT1623 HT1625 HT1626 HT162X HT1620 HT1621
Contextual Info: HT1625 RAM Mapping 64´8 LCD Controller for I/O mC Features • · · · · · · · · · Operating voltage: 2.7V~5.2V Built-in RC oscillator External 32.768kHz crystal or 32kHz frequency source input 1/4 bias, 1/8 duty, frame frequency is 64Hz Max. 64´8 patterns, 8 commons, 64 segments

Contextual Info: K4S560832C CMOS SDRAM 256Mbit SDRAM Extended Temp Support 8M x 8bit x 4 Banks Synchronous DRAM LVTTL Revision 0.1 Sept. 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.1 Sept.2001 K4S560832C CMOS SDRAM

Contextual Info: HY5V58B L F 4Banks x 8M x 8bits Synchronous DRAM DESCRIPTION The Hynix HY5V58B(L)F is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY5V58B(L)F is organized as 4banks of 8,388,608x8.