44TBED3 Search Results

BL 3030L

Contextual Info: fc>lE J> m 44TbED3 D D E l i n E3E • H I T E HM621400 Series- Preliminary 4194304-word x 1-bit High Speed CMOS Static RAM The Hitachi HM621400 is a high speed CMOS static RAM organized 4 Mword x lbit. It realizes higher performance and low power consumption

Contextual Info: HB526C264EN-10IN, HB526C464EN-10IN 1.048.576-word x 64-bit x 2-bank Synchronous Dynamic RAM Module 1.048.576-word x 64-bit x 4-bank Synchronous Dynamic RAM Module HITACHI ADE-203-737A Z Rev. 1.0 Feb. 7, 1997 Description The HB526C264EN, HB526C464EN belong to 8-byte DIMM (Dual In-line Memory Module) family,

Contextual Info: HB56G236 Series, HB56G136 Series 2,097,152-word x 36-bit High Density Dynamic RAM Module 1,048,576-word x 36-bit High Density Dynamic RAM Module HITACHI ADE-203-702A Z Rev.1.0 Dec. 27,1996 Description The HB56G236 is a 2M x 36 dynamic RAM module, mounted 4 pieces of 16-Mbit DRAM (HM5118160)

Contextual Info: HB56AW 872E Series 8388608-word x 72-bit High Density Dynamic RAM Module HITACHI ADE-203-707A Z Rev. 1.0 Jan. 10,1997 Description The HB56AW872E belongs to 8-byte DIMM (Dual in-line Memory Module) family , and has been developed an optimized main memory solution for 4 and 8-byte processor applications.

Contextual Info: HM51W16160A Series HM51W18160A Series 1048576-word x 16-bit Dynamic Random Access Memory HITACHI ADE-203-217B Z Rev. 2.0 Jul. 2, 1996 Description The Hitachi HM51W16160A Series, HM51W18160A Series are CMOS dynamic RAMs organized as 1,048,576-word x 16-bit. They employ the most advanced CMOS technology for high performance

Contextual Info: HITACHI/ LOGIC/ARRAYS/flEN TE D Ë | 44E L,S03 0010t,35 S | “ 92D HD74HC4543 10632 D TSH7 1BCD-to-Seven Segment L a tc h /D e c o d e r/D riv e r This circuit contains a 4 -b it latch, BCD-to-7 segment decoder, PIN ARRANGEMENT and 7 o u tput drivers. Data on the input pins flo w through to

Contextual Info: HB56AW873E Series 8,388,608-word x 72-bit High Density Dynamic RAM Module 168-pin JEDEC Standard Outline Buffered 8 byte DIMM HITACHI ADE-203-685A Z Rev. 1.0 Nov. 28, 1996 Description The HB56AW873E belongs to 8 Byte DIMM (Dual In-line Memory Module) family, and has been

Contextual Info: HB52R168DB Series 128 MB Unbuffered SDRAM S.O.DIMM 16-Mword x 64-bit, 66 MHz Memory Bus, 1-Bank Module 16 pcs of 16 M x 4 components HITACHI ADE-203-886 (Z) Preliminary, Rev. 0.0 F eb .6,1998 Description The HB52R168DB is a 16M x 64 x 1 bank Synchronous Dynamic RAM Small Outline Dual In-line

Contextual Info: HB56HW164DB Series, HB56HW165DB Series 1,048,576-word x 64-bit High Density Dynamic RAM Module HITACHI ADE-203-699A Z Rev. 1.0 Dec. 27,1996 Description The HB56HW164DB is a 1M x 64 dynamic RAM Small Outline Dual In-line Memory Module (S.O.DIMM), mounted 4 pieces of 16-Mbit DRAM (HM51W16165) sealed in TSOP package and 1

Contextual Info: HB526C272EN-10IN, HB526C472EN -10IN 1.048.576-word x 72-bit x 2-bank Synchronous Dynamic RAM Module 1.048.576-word x 72-bit x 4-bank Synchronous Dynamic RAM Module HITACHI ADE-203-693C Z Rev. 3.0 May. 15,1997 Description The HB526C272EN, HB526C472EN belong to 8-byte DIMM (Dual In-line Memory Module) family, and

Contextual Info: HM62Y8128B-SR Series 131,072-word x 8-bit High Speed CMOS Static RAM HITACHI ADE-203-597A Z Rev. 1.0 Jan. 16, 1997 Description The Hitachi HM62V8128B is a CMOS static RAM organized 131,072-word x 8-bit. It realizes higher density, higher performance and low power consumption by employing 0.8 |xm Hi-CMOS shrink process

HN62448NI

Abstract: d0344 44-B50
Contextual Info: HN62448NI Series 524288-word x 16-bit/l048576-word x 8-bit CMOS Mask Programmable ROM HITACHI ADE-203-771A Z Rev. 1.0 Apr. 24, 1997 Description The Hitachi HN62448NI series is a 8-Mbit CMOS mask-programmable ROM organized either as 524288word x 16-bit or 1048576-word x 8-bit. As it has realized high speed normal access 100 ns and page mode

Contextual Info: HM5117805 Series 2,097,152-Word x 8-Bit Dynamic RAM HITACHI ADE-203-630 C Z Rev. 3.0 25 Feb 1997 Description The Hitachi HM5117805 is a CMOS dynamic RAM organized as 2,097,152-word x 8-bit. It employs the most advanced CMOS technology for high performance and low power consumption. The HM5117805

HM51

Abstract: HM514800CJI-7 HM514800CJI-8 HM514800CLJI-7 Hitachi Scans-001
Contextual Info: HM514800CI Series HM51S4800CI Series 524,288-word x 8-bit Dynamic Random Access Memory HITACHI ADE-203-619A Z Rev. 1.0 Jul. 18, 1996 Description The Hitachi HM51(S)4800CI Series are CMOS dynamic RAM organized as 524,288-word x 8-bit. HM51(S)4800CI have realized higher density, higher performance and various functions by employing 0.8

Contextual Info: HN58V65A Series HN58V66A Series 8192-word x 8-bit Electrically Erasable and Programmable CMOS ROM HITACHI ADE-203-539 Z Preliminary Rev. 0.1 Nov. 12, 1996 Description The Hitachi HN58V65A series and HN58V66A series are a electrically erasable and programmable EEPROM’s organized as 8192-word x 8-bit. Employing advanced MNOS

mhtl

Contextual Info: HM5221605 Series 65,536-word x 16-bit x 2-bank Synchronous Dynamic RAM HITACHI ADE-203-199A Z Rev. 1.0 Jun. 22,1995 Description All inputs and outputs are referred to the rising edge of the clock input. The HM 5221605 is offered in 2 banks for improved performance.

Contextual Info: HM62W4100H Series 1048576-word X 4-bit High Speed CMOS Static RAM HITACHI ADE-203-774 Z Preliminary Rev. 0.0 Apr. 28, 1997 Description The HM62W4100H is an asynchronous high speed static RAM organized as 1-Mword x 4-bit. It has realized high speed access time (10/12/15 ns) with employing 0.35 )im CMOS process and high speed

Contextual Info: HM530281R Series 331,776-word x 8-bit Frame Memory HITACHI ADE-203Rev. 0.0 Dec. 1, 1995 Description The HM 530281R series memory products provide completely asynchronous I/O and operate at the high speed o f 50 M Hz. The HM 530281R series memory products provide reset, jum p, and line increment/hold pointer

Contextual Info: HN27C4001 Series 4M 512K x 8-bit UV and OTP EPROM • DESCRIPTION The Hitachi HN27C4001 is a 4-Megabit Ultraviolet Erasable and One-Time Programmable Electrically Programmable Read Only Memory organized as 524,288 x 8-bits. The HN27C4001 features fast address access times of 100,120

Contextual Info: HM5164165A Series HM5165165A Series 4194304-word x 16-bit Dynamic Random Access Memory HITACHI Preliminary Rev. 0.0 Apl. 26, 1996 Description The Hitachi HM5164165A Series, HM5165165A Series are CMOS dynamic RAMs organized as 4,194304word x 16-bit. They employ the most advanced CMOS technology for high performance and low power.

Contextual Info: HM51W4260C Series 262,144-word x 16-bit Dynamic Random Access Memory HITACHI ADE-203-292B Z Rev. 2.0 Jul. 18, 1996 Description The Hitachi HM 51W 4260C is CMOS dynamic RAM organized as 262,144-word x 16-bit. HM51W 4260C has realized higher density, higher performance and various functions by employing 0.8 |im CMOS process

Contextual Info: HM5221605 Series 65,536-word x 16-bit x 2-bank Synchronous Dynamic RAM HITACHI ADE-203-199A Z Rev. 1.0 Jun. 22, 1995 Description All inputs and outputs are referred to the rising edge of the clock input. The HM5221605 is offered in 2 banks for improved performance.

Contextual Info: HM62A9128/8128 Series 131072-word x 9 8 -blt Synchronous Cache SRAM Features Pin Arrangement • For high speed cache memory applications • Pipeline access capability with on-chip address, strobe and I/O resisters • Organization: 128 kwotd x 9(8) bit

Contextual Info: H ITA C H I/ LOGIC/ARRAYS/MEN TE D Ë | 44i h a D 3 DülDBbS 92D HD74HC108 10365 fl D Dual J-K Flip-Flops with Preset Common Clear, and Common Clock PIN ARRANGMENT T h is flip -flo p is edge sensitive to the clo c k in p u t and change state o n the negative tran sition o f the clo c k pulse. Each