HM621400 Search Results

Contextual Info: HM621400 Series Prelim inary 4,194,304-Word x 1-Bit High Speed CMOS Static RAM • FEATURES • High Speed: Fast access time 25/30/35/45 ns max. (P-version) 30/35/45 ns(max.) (LP-version) • Single 5V supply • Completely static memory No clock or timing strobe required

Contextual Info: HM621400HC Series 4M High Speed SRAM 4-Mword x 1-bit ADE-203-1199B (Z) Rev. 1.0 Nov. 30, 2001 Description The HM621400HC is a 4-Mbit high speed static RAM organized 4-Mword × 1-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell)and high speed circuit designing

Hitachi DSAUTAZ006

Contextual Info: HM621400HC Series 4M High Speed SRAM 4-Mword x 1-bit ADE-203-1199 (Z) Preliminary Rev. 0.0 Nov. 30, 2000 Description The HM621400HC is a 4-Mbit high speed static RAM organized 4-Mword × 1-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell)and high speed circuit designing

HM621400HC

Abstract: HM621400HCJP-10 HM621400HCLJP-10 transistor marking CS Hitachi DSA00316
Contextual Info: HM621400HC Series 4M High Speed SRAM 4-Mword x 1-bit ADE-203-1199B (Z) Rev. 1.0 Nov. 30, 2001 Description The HM621400HC is a 4-Mbit high speed static RAM organized 4-Mword × 1-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell)and high speed circuit designing

row decoder

Abstract: transistor a13 A15 -5Y13 A18 transistor A8 diode diode a3 diode a7 HM621400HC
Contextual Info: HM621400HC Series Block Diagram LSB A15 A14 A13 A6 A7 A8 A12 A11 A3 A1 (MSB) Row decoder Internal voltage generater 1024-row x 256-column × 16-block × 1-bit (4,194,304 bits) VSS CS Din Dout Column I/O Column decoder CS 4 CS A9A10A21A19 A20A17A16A5 A0 A2 A4 A18

Contextual Info: HM621400HC Series Pin Arrangement 32-pin SOJ A0 A1 A2 A3 A4 A5 VCC VSS Din A6 A7 A8 A9 A10 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 A21 A20 A19 A18 A17 A16 VSS VCC Dout A15 A14 A13 A12 A11 NC Top view Pin Description

Contextual Info: HM621400H Series 4M High speed SRAM 4-Mword x 1-bit HITACHI ADE-203-787A (Z) Preliminary, Rev. 0.1 Nov. 20, 1997 Description The HM621400H is an asynchronous high speed static RAM organized as 4-Mword X 1-bit. It has realized high speed access time (10/12/15 ns) with employing 0.35 Jim CMOS process and high speed circuit

HM621400H

Abstract: HM621400HJP-10 HM621400HJP-12 HM621400HJP-15 HM621400HLJP-10 HM621400HLJP-12 HM621400HLJP-15 Hitachi DSA0044
Contextual Info: HM621400H Series 4M High Speed SRAM 4-Mword x 1-bit ADE-203-787D (Z) Rev. 1.0 Sept. 15, 1998 Description The HM621400H is a 4-Mbit high speed static RAM organized 4-Mword × 1-bit. It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell)and high speed

diode a3

Abstract: transistor a13 HM621400HC
Contextual Info: HM621400HC Series Block Diagram LSB A15 A14 A13 A6 A7 A8 A12 A11 A3 A1 (MSB) Row decoder Internal voltage generator 1024-row x 256-column × 16-block × 1-bit (4,194,304 bits) VSS CS Din Dout Column I/O Column decoder CS A9A10A21A19 A20A17A16A5 A0 A2 A4 A18

HM621400H

Abstract: HM621400HJP-10 HM621400HJP-12 HM621400HJP-15 HM621400HLJP-10 HM621400HLJP-12 HM621400HLJP-15 Hitachi DSA00197
Contextual Info: HM621400H Series 4M High Speed SRAM 4-Mword x 1-bit ADE-203-787D (Z) Rev. 1.0 Sep. 15, 1998 Description The HM621400H is a 4-Mbit high speed static RAM organized 4-Mword × 1-bit. It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell)and high speed circuit

Contextual Info: HM621400H Series 4M High Speed SRAM 4-Mword x 1-bit HITACHI ADE-203-787C (Z) Preliminary, Rev. 0.3 May 15, 1998 Description The HM621400H is an asynchronous high speed static RAM organized as 4-Mword x 1-bit. It has realized high speed access time (10/12/15 ns) with employing 0.35 (Am CMOS process (4-transistor + 2-poly

Hitachi DSAUTAZ006

Contextual Info: HM621400HC Series Package Dimensions HM621400HCJP/HCLJP Series CP-32DB Unit: mm 3.50 ± 0.26 1.30 Max *0.43 ± 0.10 0.41 ± 0.08 1.27 2.85 ± 0.12 16 0.74 0.80 +0.25 –0.17 1 11.18 ± 0.13 17 10.16 ± 0.13 32 20.71 21.08 Max 9.40 ± 0.25 0.10 *Dimension including the plating thickness

Contextual Info: HM621400H Series 4M High Speed SRAM 4-Mword x 1-bit HITACHI ADE-203-787D (Z) Rev. 1.0 Sept. 15, 1998 Description The HM621400H is a 4-Mbit high speed static RAM organized 4-Mword x 1-bit. It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell)and high speed

HM621400H

Abstract: HM621400HJP-10 HM621400HJP-12 HM621400HJP-15 HM621400HLJP-10 HM621400HLJP-12 HM621400HLJP-15 Hitachi DSA00316
Contextual Info: HM621400H Series 4M High Speed SRAM 4-Mword x 1-bit ADE-203-787D (Z) Rev. 1.0 Sep. 15, 1998 Description The HM621400H is a 4-Mbit high speed static RAM organized 4-Mword × 1-bit. It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell)and high speed circuit

4Mx4 dram simm

Abstract: TTP32 SIMM72 dram card 60 pin 8KX8 TTP42 4MX16* dram fpm 4Mx8 dram simm 32MByte 334k
Contextual Info: Memory Overview Package Type -Pin Count Supply Voltage Flash_Card ATA-68 3.3; 5.0 ATA flash card, ISA Bus I/F NVM Flash_Card CF-50 3.3; 5.0 Compact flash card 15MByte NVM Flash_Card ATA-68 3.3; 5.0 ATA flash card, ISA Bus I/F HB286015C3 15MByte NVM Flash_Card

HM621400HCLJP-12

Abstract: HM621400HC HM621400HCJP-10 HM621400HCJP-12 HM621400HCLJP-10
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

BP-119

Abstract: CP44 SRAM 16k*8
Contextual Info: Device Name Total Size Family Device Organi- Access PackageSupply Remarks sation Time TypeVoltage max Pincount [V] [ns] 2,1 MMC-7 2.70 - 3.60 MultiMediaCard TM 2.5 HB288016MM1 16Mbyte NVM Flash_Card HB288032A5 32Mbyte NVM Flash_Card - 55 70 ATA-68 3.30 - 5.00 PC ATA card

4Mx1 sram

Abstract: HM51W17805 16Mx8 dram EDO HB286060A3 HB289016A4 HN29W16814 8mx32 simm 72 pin FP-28 HB289048C4 TFP-32
Contextual Info: Memories Overview Device Name Total Size Family Device Organisation Access Cycle Time Package Time min ns Type - Pin max(ns) Count Supply Voltage Remarks link HB286008A3 8Mbyte NVM Flash_Card - - - ATA-68 3.0-3.6 4.5-5.5 ATA flash card, ISA Bus I/F HB286008C3

HN58C1001FPI-15

Abstract: HN58C1001FPI-15 hitachi M5M5V216ATP-55HI M5M51008DFP-55HI BGA-165 M5M5W817 TSOP 28 SPI memory Package flash BGA165 SRAM 512K*8 BIT SOP32 M5M5256DFP-70LL
Contextual Info: Memory Products Reliable specialty, advanced and mainstream commodity memory devices for digital storage applications Renesas, the #3 semiconductor supplier worldwide, offers an extensive range of memory ICs for temporary and permanent digital storage in all kinds