HM621400 Search Results

Contextual Info: HITACHI/ LOG IC/ARRAYS/HE II S1E » • HM621400 S e rie s - 4MTbEG3 001Ö1Ü7 TS3 ■ - Preliminary ’- < 4 * - Z 3 - G > s r 4,194,304-Word x 1-Bit High Speed CMOS Static RAM ■ FEATURES • High Speed:

BL 3030L

Contextual Info: fc>lE J> m 44TbED3 D D E l i n E3E • H I T E HM621400 Series- Preliminary 4194304-word x 1-bit High Speed CMOS Static RAM The Hitachi HM621400 is a high speed CMOS static RAM organized 4 Mword x lbit. It realizes higher performance and low power consumption

HM621400HC

Abstract: HM621400HCJP-10 HM621400HCLJP-10 Hitachi DSA00358
Contextual Info: HM621400HC Series 4M High Speed SRAM 4-Mword x 1-bit ADE-203-1199 (Z) Preliminary Rev. 0.0 Nov. 30, 2000 Description The HM621400HC is a 4-Mbit high speed static RAM organized 4-Mword × 1-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell)and high speed circuit designing

Contextual Info: HM621400H Series 4M High Speed SRAM 4-Mword x 1-bit ADE-203-787B (Z) Preliminary Rev. 0.2 Dec. 5, 1997 Description The HM621400H is an asyncronous high speed static RAM organized as 4-Mword × 1-bit. It has realized high speed access time (10/12/15 ns) with employing 0.35 µm CMOS process (4-transistor + 2-poly resistor

Contextual Info: HM621400HC Series Pin Arrangement 32-pin SOJ A0 A1 A2 A3 A4 A5 CS VCC VSS Din WE A6 A7 A8 A9 A10 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 A21 A20 A19 A18 A17 A16 OE VSS VCC Dout A15 A14 A13 A12 A11 NC Top view

HM621400HC

Abstract: HM621400HCJP-10 HM621400HCLJP-10 Hitachi DSA00190
Contextual Info: HM621400HC シリーズ 4M High Speed SRAM 4-Mword x 1-bit ADJ-203-566 (Z) 暫定仕様 Rev. 0.0 ’00. 11. 30 概要 HM621400HC シリーズは 4M ワード×1 ビット構成の 4M ビット高速スタティック RAM です。CMOS（6 トランジスタメモリセル） プロセス技術を採用し，高密度，高性能，低消費電 力を実現しました。したが

Z 263B

Abstract: HM621400H HM621400HJP-10 HM621400HJP-12 HM621400HJP-15 HM621400HLJP-10 HM621400HLJP-12 HM621400HLJP-15 Hitachi DSA00189
Contextual Info: HM621400H シリーズ 4M High Speed SRAM 4-Mword x 1-bit ADJ-203-263B (Z) ’98. 9. 15 Rev. 1.0 概要 HM6 21 40 0H シリーズは 4M ワード×1 ビット構成の 4M ビット高速スタティック RAM です。CMOS（4 トランジスタ+ 2 ポリレジスタメモリセル）プロセス技術を採用し，高密度，高性能，低消費電力を実現し

Contextual Info: HM621400 Series Preliminary 4,194,304-Word x 1-Bit High Speed CM O S Static RAM I FEATURES High Speed: Fast access time 25/30/35/45 ns max. (P-version) 30/35/45 ns(max.) (LP-version) 1 Single 5V supply • Completely static memory No clock or timing strobe required

Contextual Info: HM621400 Series Prelim inary 4,194,304-Word x 1-Bit High Speed CMOS Static RAM • FEATURES • High Speed: Fast access time 25/30/35/45 ns max. (P-version) 30/35/45 ns(max.) (LP-version) • Single 5V supply • Completely static memory No clock or timing strobe required

Contextual Info: HM621400HC Series 4M High Speed SRAM 4-Mword x 1-bit ADE-203-1199B (Z) Rev. 1.0 Nov. 30, 2001 Description The HM621400HC is a 4-Mbit high speed static RAM organized 4-Mword × 1-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell)and high speed circuit designing

Hitachi DSAUTAZ006

Contextual Info: HM621400HC Series 4M High Speed SRAM 4-Mword x 1-bit ADE-203-1199 (Z) Preliminary Rev. 0.0 Nov. 30, 2000 Description The HM621400HC is a 4-Mbit high speed static RAM organized 4-Mword × 1-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell)and high speed circuit designing

HM621400HC

Abstract: HM621400HCJP-10 HM621400HCLJP-10 transistor marking CS Hitachi DSA00316
Contextual Info: HM621400HC Series 4M High Speed SRAM 4-Mword x 1-bit ADE-203-1199B (Z) Rev. 1.0 Nov. 30, 2001 Description The HM621400HC is a 4-Mbit high speed static RAM organized 4-Mword × 1-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell)and high speed circuit designing

row decoder

Abstract: transistor a13 A15 -5Y13 A18 transistor A8 diode diode a3 diode a7 HM621400HC
Contextual Info: HM621400HC Series Block Diagram LSB A15 A14 A13 A6 A7 A8 A12 A11 A3 A1 (MSB) Row decoder Internal voltage generater 1024-row x 256-column × 16-block × 1-bit (4,194,304 bits) VSS CS Din Dout Column I/O Column decoder CS 4 CS A9A10A21A19 A20A17A16A5 A0 A2 A4 A18

Contextual Info: HM621400HC Series Pin Arrangement 32-pin SOJ A0 A1 A2 A3 A4 A5 VCC VSS Din A6 A7 A8 A9 A10 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 A21 A20 A19 A18 A17 A16 VSS VCC Dout A15 A14 A13 A12 A11 NC Top view Pin Description

HM621400H

Abstract: HM621400HJP-10 HM621400HJP-12 HM621400HJP-15 HM621400HLJP-10 HM621400HLJP-12 HM621400HLJP-15 Hitachi DSA0044
Contextual Info: HM621400H Series 4M High Speed SRAM 4-Mword x 1-bit ADE-203-787D (Z) Rev. 1.0 Sept. 15, 1998 Description The HM621400H is a 4-Mbit high speed static RAM organized 4-Mword × 1-bit. It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell)and high speed

diode a3

Abstract: transistor a13 HM621400HC
Contextual Info: HM621400HC Series Block Diagram LSB A15 A14 A13 A6 A7 A8 A12 A11 A3 A1 (MSB) Row decoder Internal voltage generator 1024-row x 256-column × 16-block × 1-bit (4,194,304 bits) VSS CS Din Dout Column I/O Column decoder CS A9A10A21A19 A20A17A16A5 A0 A2 A4 A18

HM621400H

Abstract: HM621400HJP-10 HM621400HJP-12 HM621400HJP-15 HM621400HLJP-10 HM621400HLJP-12 HM621400HLJP-15 Hitachi DSA00197
Contextual Info: HM621400H Series 4M High Speed SRAM 4-Mword x 1-bit ADE-203-787D (Z) Rev. 1.0 Sep. 15, 1998 Description The HM621400H is a 4-Mbit high speed static RAM organized 4-Mword × 1-bit. It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell)and high speed circuit

Contextual Info: HM621400H Series 4M High Speed SRAM 4-Mword x 1-bit HITACHI ADE-203-787C (Z) Preliminary, Rev. 0.3 May 15, 1998 Description The HM621400H is an asynchronous high speed static RAM organized as 4-Mword x 1-bit. It has realized high speed access time (10/12/15 ns) with employing 0.35 (Am CMOS process (4-transistor + 2-poly

Hitachi DSAUTAZ006

Contextual Info: HM621400HC Series Package Dimensions HM621400HCJP/HCLJP Series CP-32DB Unit: mm 3.50 ± 0.26 1.30 Max *0.43 ± 0.10 0.41 ± 0.08 1.27 2.85 ± 0.12 16 0.74 0.80 +0.25 –0.17 1 11.18 ± 0.13 17 10.16 ± 0.13 32 20.71 21.08 Max 9.40 ± 0.25 0.10 *Dimension including the plating thickness

Contextual Info: HM621400H Series 4M High Speed SRAM 4-Mword x 1-bit HITACHI ADE-203-787D (Z) Rev. 1.0 Sept. 15, 1998 Description The HM621400H is a 4-Mbit high speed static RAM organized 4-Mword x 1-bit. It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell)and high speed

HM621400H

Abstract: HM621400HJP-10 HM621400HJP-12 HM621400HJP-15 HM621400HLJP-10 HM621400HLJP-12 HM621400HLJP-15 Hitachi DSA00316
Contextual Info: HM621400H Series 4M High Speed SRAM 4-Mword x 1-bit ADE-203-787D (Z) Rev. 1.0 Sep. 15, 1998 Description The HM621400H is a 4-Mbit high speed static RAM organized 4-Mword × 1-bit. It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell)and high speed circuit

Hitachi DSAUTAZ006

Contextual Info: HM621400HC Series Package Dimensions HM621400HCJP/HCLJP Series CP-32DB As of July, 2001 Unit: mm 3.50 ± 0.26 1.30 Max *0.43 ± 0.10 0.41 ± 0.08 1.27 2.85 ± 0.12 16 0.74 0.80 +0.25 –0.17 1 11.18 ± 0.13 17 10.16 ± 0.13 32 20.71 21.08 Max 9.40 ± 0.25

lh62256

Abstract: 128k x8 SRAM TSOP upd431000-70 TC55257 Hitachi HM628512 EOL hm62v16512 CY7C1049 hm62256 K6R4004V1C UPD43256
Contextual Info: Hitachi SRAM Cross-Reference Guide June 2001 256K Low Power Bytewide 32K x8 55ns, 70ns and 85ns standard speeds Basic Part # HM62256 K6T0808C1 CY62256 TC55257 uPD43256 W24257 GM76C256C LH62256 Hitachi * Samsung Cypress Toshiba NEC Winbond Hyundai Sharp Speed s

7054F

Abstract: BC564A HA13563 AC123A HITACHI microcontroller H8 534 manual IC 74LS47 AC538 BC245A 2SK3235 HA13557
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