44TB2G5 Search Results

2SK299

Abstract: 2SK298 HITACHI 2SK* TO-3
Contextual Info: 44Tb2G5 G013G24 4bT • H I T 4 blE D 2SK298,2SK299 HITACHI/ OPTOELECTRONICS SILICON N-CHANNEL MOS FET HIGH SPEED POWER SWITCHING. HIGH FREQU EN CY POWER AMPLIFIER ■ FEATURES • Low On-Resistance. • High Speed Switching. • High Cutoff Frequency. •

LTTG

Abstract: EM 257
Contextual Info: 4 4 ^ 2 0 5 0 G13 D35 245 • H I T 4 2SK318— HI TA CHI/ OP TO ELE CTR ON ICS blE » SILICON N-CHANNEL MOS FET H F /V H F POWER AMPLIFIER ■ FEATURES • High Breakdown Voltage. • You Can Decrease Handling Current. • Gate is Protected by Zenner Diodes.

LTH 1550 01

Contextual Info: HL1551 A/AC InGaAsP LD Description The HL1551A/AC are 1.55 jim InGaAsP A/4 phase-shifted distributed-feedback laser diodes DFB-LD with a multi-quantum well (MQW) structure. They are suitable as light sources for high-bit-rate, long- haul fiberoptic communication systems and other applied optical equipment. The compact package is suitable

2SK622

Abstract: DL50A
Contextual Info: b lE D M M Ib ö D S 0D 131D h 325 iH im 2SK622 S.0mu L ¿ IS SILICON N-CHANNEL MOS FET HIGH SPEED POWER SWITCHING • FEATURES • Low On-Resistance 0.6 ± 0.2 9 High Speed Switching • Low Drive Current 1.Gate 2. Drain Flange 3. Source (Dimensions in mm)

HL8314E

Abstract: XP 215 hitachi HE130 HE8815VG hitachi he1301 HL8314G HE8807SG HL8312E Hitachi Scans-001
Contextual Info: HITACHI/ OPTOELECTRONICS SHE D • MMTbSDS 0012071 3TT ■ H L 8 3 1 4 E /G _GaAIAs LD Description *4 (~ C & The HL8314E/G are high-power 0.8 pm band GaAIAs laser diodes with a double heterojunction structure. They are suitable as light sources for optical disk memories and various other types of optical equipment

2SK400

Abstract: hitachi 2sK400 2SJ114 2SK400 N
Contextual Info: MMTbSOS OOIBOM^ & 3 T 2SK400 IHIT4 HITACHI/ O P T O E L E C T R O N I C S LIE D SILIC O N N-CHAIMNEL M O S FET HIGH SPEED POWER SW ITCHING. HIGH FREQUENCY POWER AMPLIFIER 2 o C o m p le m e n ta ry p a ir w it h 2 S J 1 1 4 _L8 • FEATURES • Low O n-Resistance.

4575N

Contextual Info: blE D • H4Tb205 DD13t,S7 3T1 ■ H I T l4 PM4575N Preliminary HITACHI/ OPTO ELECTRON ICS SILICON N-CHANNEL POWER MOS FET MODULE HIGH SPEED POWER SWITCHING ■ FEATURES • Equipped with Power MOS FET • Low On-Resistance • High Speed Switching •

Contextual Info: HITACHI/COPTOE LEC TRONICS 54E D • MM^bSOS 001E0b3 EIE H H I T M H L 8 3 1 1 E /G GaAIAsLD T - m Description - 0 5 The HL8311E/G are 0.8 jim band GaAlAs laser diodes with a double heterojunction structure. They are suitable as light sources for optical disk memories and various other types of optical equipment.

2SK1514

Abstract: GG13
Contextual Info: M M TbSQS 2SK1514 Ü Ü IB M C H IHIT4 fifi? HITACHI/ OPTOELECTRONICS blE D SILICON N-CHANNEL MOS FET HIGH SPEED POWER SWITCHING • FEATURES • Low On-Resistance • High Speed Switching • Low Drive Current • 4 V Qate Drive Device - Can be Driven from 5 V Source