2SK298 Search Results

Contextual Info: 2SK2985 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U−MOSII 2SK2985 DC−DC Converter, Relay Drive and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 4.5 mΩ (typ.) z High forward transfer admittance : |Yfs| = 70 S (typ.)

Contextual Info: 2SK2980 Silicon N Channel MOS FET High Speed Power Switching REJ03G1061-0400 Previous: ADE-208-571B Rev.4.00 Sep 07, 2005 Features • Low on-resistance RDS(on) = 0.2 Ω typ. (VGS = 4 V, ID = 500 mA) • 2.5 V gate drive devices. • Small package (MPAK)

2SK2987

Abstract: SC-65
Contextual Info: TOSHIBA 2SK2987 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE U-M OSÏÏ 2SK2987 HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS • • • • Low Drain-Source ON Resistance : RßS (ON)= 4.5mO (Typ.)

K298

Abstract: K2986
Contextual Info: 2SK2986 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U−MOSII 2SK2986 DC−DC Converter, Relay Drive and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 4.5 mΩ (typ.) z High forward transfer admittance : |Yfs| = 80 S (typ.)

2SK2982

Abstract: 2SK2982-Z
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2982 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2982 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-resistance RDS on 1 = 12.5 mΩ MAX. (VGS = 10 V, ID = 15 A)

Contextual Info: 2SK2980 Silicon N Channel MOS FET High Speed Power Switching HITACHI ADE-208-571B Z 3rd. Edition Jun 1998 Features • Low on-resistance RDS(on) = 0. 2 ß typ. (VGS = 4 V, ID= 500 mA) • 2.5V gate drive devices. • Small package (MPAK) Outline 2SK2980

Contextual Info: TO SHIBA 2SK2985 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE U -M O SH 2SK2985 HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS Low Drain-Source ON Resistance : Rd S (ON) = 4.5 m il (Typ.)

Contextual Info: TOSHIBA 2SK2986 T O SH IBA FIELD EFFECT TRA NSISTO R SILICON N C H A N N EL M O S TYPE U - M O S II 2SK2986 HIGH CURRENT SW ITCH IN G APPLICATIO NS DC-DC CONVERTER, RELAY DRIVE A N D M O T O R DRIVE APPLICATIO NS INDUSTRIAL APPLICATIONS Unit in mm 10.3MAX

Contextual Info: T O SH IB A 2SK2987 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE U-MOSH 2SK2987 HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS • • • • INDUSTRIAL APPLICATIONS Unit in mm Low Drain-Source ON Resistance : Rd S (ON)= 4.5mfl (Typ.)

2sk2988

Abstract: JISC7030 SC-75
Contextual Info: Silicon Junction FETs Small Signal 2SK2988 Silicon N-Channel Junction FET For impedance conversion in low frequency For pyroelectric sensor unit: mm M Di ain sc te on na tin nc ue e/ d 1.6±0.15 +0.1 0.2–0.05 0.5 1.0±0.1 −40 V Drain current ID 10 mA

Contextual Info: 2SK2989 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSVI 2SK2989 Chopper Regulator, DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 120 mΩ (typ.) High forward transfer admittance : |Yfs| = 2.6 S (typ.)

K2986

Contextual Info: 2SK2986 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U−MOSII 2SK2986 DC−DC Converter, Relay Drive and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 4.5 mΩ (typ.) High forward transfer admittance : |Yfs| = 80 S (typ.)

Contextual Info: 2SK2986 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U−MOSII 2SK2986 DC−DC Converter, Relay Drive and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 4.5 mΩ (typ.) High forward transfer admittance : |Yfs| = 80 S (typ.)

Contextual Info: 2SK2980 Spice parameter .SUBCKT 2sk2980 1 2 3 * Model generated on Jun 1, 99 * MODEL FORMAT: SPICE3 * Symmetry POWER MOS Model Version 1.0 * External Node Designations * Node 1 -> Drain * Node 2 -> Gate * Node 3 -> Source M1 9 7 8 8 MM L=100u W=100u * Default values used in MM:

Contextual Info: DATA S H EE T MOS FIELD EFFECT TRANSISTOR 2SK2982 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DRAWINGS Unit : mm This product is N-Channel MOS Field Effect Transistor designed for high TO-251 current switching applications. FEATURES

pyroelectric sensor

Abstract: JISC7030 Junction-FET junction fet high frequency n-channel SSMIni noise gate SS TRANSISTOR 2SK2988 SC-75
Contextual Info: Silicon Junction FETs Small Signal 2SK2988 Silicon N-Channel Junction FET For impedance conversion in low frequency For pyroelectric sensor unit: mm 1.6±0.15 0.4 0.8±0.1 0.4 +0.1 1.0±0.1 0.5 0 to 0.1 +0.1 0.15–0.05 0.45±0.1 0.3 0.75±0.15 Symbol Unit

2SK2983

Abstract: 2SK2983-S MP-25 MP-25Z
Contextual Info: データ・シート MOS 形電界効果トランジスタ MOS Field Effect Transistor 2SK2983 N チャネル パワーMOS FET スイッチング用 工業用 2SK2983 は N チャネル縦型 MOS FET でオン抵抗特性が優れており，スイッチング電源に適しています。

ITE 8502

Abstract: 2SK2984 2SK2984-S MP-25 MP-25Z 2SK29
Contextual Info: データ・シート MOS 形電界効果トランジスタ MOS Field Effect Transistor 2SK2984 N チャネル パワーMOS FET スイッチング用 工業用 2SK2984 は N チャネル縦型 MOS FET でオン抵抗特性が優れており，スイッチング電源に適しています。

2SK298

Abstract: 2SK299 J-10 diode vu J10 DIODE HITACHI 2SK* TO-3
Contextual Info: IHIT4 4MTb205 G013024 4bT blE D 2SK298,2SK299 HITACHI/ OPTOELECTRONICS SILICON N-CHANNEL MOS FET HIGH SPEED POWER SW ITCHING , HIGH FREQUENCY POWER AMPLIFIER • FEATURES • Low On-Resistance. • High Speed Switching. • High Cutoff Frequency. • No Secondary Breakdown.

diode PJ 0416

Abstract: diode PJ 0416 diode 0416 PJ 0416
Contextual Info: TO SHIBA TENTATIVE 2SK2986 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE U - M O SII 2SK2986 HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm 10.3 MAX. Low Drain-Source ON Resistance

Contextual Info: D A TA S H E E T MOS FIELD EFFECT TRANSISTOR 2SK2983 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for high current switching application. FEATURES • Low on-resistance Rds oh i = 20 m£i (MAX.) (Vgs = 10 V, Id = 15 A)

Hitachi DSA00276

Contextual Info: 2SK2980 Silicon N Channel MOS FET High Speed Power Switching ADE-208-571B Z 3rd. Edition Jul. 1998 Features • Low on-resistance R DS(on) = 0. 2Ω typ. (VGS = 4 V, I D = 500 mA) • 2.5V gate drive devices. • Small package (MPAK) Outline MPAK 3 1 D 2

2SK2989

Contextual Info: TOSHIBA 2SK2989 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSVI 2SK2989 HIGH SPEED SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm 5.1 MAX. APPLICATIONS Low Drain-Source ON Resistance : Rd S(ON) = 120 mH (Typ.)

45ACZ

Contextual Info: TO SHIBA TENTATIVE 2SK2985 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE U-M OSII 2S K2985 HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS • Low Drain-Source ON Resistance • High Forward Transfer Admittance : |Yfs| = 70S (Typ.)