42EJ Search Results

Contextual Info: SAMSUNG ELECTRONICS INC 42 E ]> 71 bmM 2. OGI0 7 b l T I KM6264A/KM6264AL/KM6264ALL CMOS SRAM " T ^ e v ? 8 K x 8 B i t S t a t ic R A M FEATURES GENERAL DESCRIPTION • Fast Access Time: 70,100,120 ns (max. • Low Power Dissipation Standby (CMOS): 10/jW (typ.) L-Verslon

Contextual Info: 42E » JH SAMSUNG ELECTRONICS INC KM75C103A 7U_4'1.M2 _00].Ji5bS 3 M S M G K CMOS PROGRAMMABLE FLAG FIFO :%-zs P r o g r a m m a b le - F la g s , 2 K X 9 F IF O FEATURES DESCRIPTION • Flrst-ln-Flrst-Out Dual Port Memory —2 K x 9 Organization • Very High Speed independent of depth/width

Contextual Info: TOSHIBA LOGIC/MEMORY M2 E D 2,097,152 W ORDS X 32 BIT D Y N A M IC RAM Hi ^0 ^ 7 5 4 8 0 Q2 1 S20 S PRELIMINARY M O D U LE DESCRIPTION The THM322020S is a 2,097,152 words by 32 bits dynamic RAM module which assembled 16 pcs of TC514400J on the printed circuit board. The THM322020S can be as well used as 4,194,304 words by

Contextual Info: SAMSUNG ELECTRONICS INC 42 E D O f 7Sb41_42 £ 0 1 0 1 4 1 KM44C288B 2 MStlGK CMOS DRAM Lfio'ZS-tS 256K X 4 Bit CMOS Dynamic RAM with Static Column Mode Write Per Bit Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM44C268B is a high speed CMOS