DQODQ31 Search Results

cd018

Contextual Info: TMS28F033 4194304-BIT SYNCHRONOUS FLASH MEMORY _ SM JS633 - NOVEMBER 1997 PAF 80-PIN PACKAGE TOP VIEW 8 X to. > i> 5 ¡r lo o Ear IS IS IS |w lo I * 0017 C D018 C DQ19 C VDDE C VSSE C OQ20 C 0Q21 C 0Q22 C DQ23 C DQ24 C DQ25 C

Contextual Info: 1 ,0 4 8 ,5 7 6 W O R D S x 32 BIT D Y N A M IC RAM M O D U LE PRELIMINARY D ESC R IPTIO N The THM321020S is a 1,048,576 words by 32 bits dynamic RAM module which assembled 8 pcs of TC514400J on the printed circuit board. The THM321020S can be as well used as 2,097,152 words by

Contextual Info: ADVANCE M IC R O N I MT41 LC256K32D4 S 256K x 32 SGRAM f ^ D A D U I f ^ C n A R /l w r iM IV I n M r n l V / O 256K x 32 SGRAM PULSED RAS, DUAL BANK, p i p e lin e d ,3 .3 V o p e r a t io n NEW SYNCHRONOUS FEATURES OPTIONS MARKING • Timing 10ns access

Contextual Info: APR i ' 'm , CM fl DT SM23216Z August 1990 Preliminary Ujlll111 IMuUrTldinologies SM23216Z 64 KByte 16K x 32 CMOS SRAM Module General Description Features The SM23216Z is a high performance, 64 kilobyte static RAM module, organized as 16K words by 32 bits, in a 64-pin, zigzag-in-line memory module

Contextual Info: SIEMENS 2M X 32-Bit Dynamic RAM Module HYM 322160S/GS-60/-70 Advanced Information • 2 097 152 words by 32-Bit organization alternative 4 194 304 words by 16-Bit • Fast access and cycle time 60 ns access time 110 ns cycle time (-60 version) 70 ns access time

samsung CL21

Abstract: 2G271
Contextual Info: KM4132G271 ELECTRONICS Graphic Memory 128K x 32Bit x 2Bank Synchronous Graphic RAM FEATURES GENERAL DESCRIPTION • • • • The KM4132G271 is 8,388,608 bits synchronous high data rate Dynamic RAM organized as 2 x 131,072 words by 32 bits, fabricated with SAMSUNG'S high performance

MM7322000

Contextual Info: ^ . GMM7322000CS/SG-60/70/80 L G S e m ic o n C o .,L td . Description The GMM7322000CS/SG is a 2M x 32 bits Dynamic RAM MODULE which is assembled 16 pieces of 1M x 4bit DRAMs in 24 pin SOJ package on both sides the printed circuit board with decoupling capacitors. The GMM7322000CS/SG is

jeida dram 88 pin

Contextual Info: STI321000C1 88-PIN CARDS 1M X 32 DRAM Card FEATURES GENERAL DESCRIPTION • The Simple Technology STI321000C1 is a 1M bit x 32 Dynamic RAM high density memory card. The Simple Technology STI321000C1 consist of eight CMOS 1M x 4 bit DRAMs in 20pin SOJ package. The circuit board is enclosed in a credit-card

Contextual Info: SIEMENS 1M X 32-Bit Dynamic RAM Module 2M X 16-Bit Dynamic RAM Module HYM 321160S/GS-60/-70 Advanced Inform ation • 1 048 576 w ords by 32-bit organization (alternative 2 097 152 w ords by 16-bit) • Fast access and cycle tim e 60 ns access time 110 ns cycle tim e (-60 version)

S132C

Abstract: TM248CBK32S TM124BBK32S TM124BBK32 TM248CBK32 TM248CBK32U
Contextual Info: TM124BBK32, TM124BBK32S1 048 576 BY 32-BIT DYNAMIC RAM MODULE TM248CBK32, TM248CBK32S 2 097152 BY 32-BIT DYNAMIC RAM MODULE SMMS132C-JANUARY1991-REVISED DECEMBER 1992 * Performance Ranges: Organization TM124BBK32 . . . 1 048 576 x 32 TM248CBK32 . . . 2 097 152 x 32

TM497BBK32S

Abstract: Q 4.194 304 417400D TM893CBK32 TM893CBK32S
Contextual Info: TM497BBK32, TM497BBK32S 4194 304 BY 32-BIT DYNAMIC RAM MODULE TM893CBK32, TM893CBK32S 8 388 608 BY 32-BIT DYNAMIC RAM MODULE SMMS433-JANUARY1993 Organization TM497BBK32 . . . 4 194 304 x 32 TM893CBK32 . . . 8 388 608 x 32 • Presence Detect • Performance Ranges:

Contextual Info: SAMSUNG ELECTRONICS INC b4E D • 7 ^ 4 1 4 2 0014=12^ 604 « S M Ù K PRELIMINARY KM M5322000W/WG DRAM MODULES 2M X 32 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Sam sung KMM5322000W is a 2M bit x 32 Dynamic RAM high density memory module. The Samsung

XO-22

Abstract: 16Qv
Contextual Info: TMS28F033 4194304-BIT SYNCHRONOUS FLASH MEMORY _ S M J S 8 3 3 - N O V EM B E R 1997 Organization - 512K-Byte Main Array - 24K-Byte Protected Overlay-Biock User-Defined x16 or x32 Data Bus PAF 80-PIN PACKAGE TOP VIEW Is ¡1 Burstable Pipelined Read interface With

uras 14 manual

Contextual Info: SIEMENS Memories for Graphics Systems 16M Synchronous Graphics RAM SGRAM HYB39S16320TQ-6 HYB39S16320TQ-7 HYB39S16320TQ-8 Version 2.1.00 Preliminary Information SGRAM 1.1999 HYB39S16320TQ-6/-7/-8 Revision History: Current Version 2.1.00 Previous Version: 1 .x.xx

S-10

Contextual Info: 1,0 48 ,5 7 6 W O R D S x 32 BIT D Y N A M IC RAM MODULE PRELIMINARY DESCRIPTION The THM 321020S is a 1,048,576 words by 32 b its dynam ic RAM module which assembled 8 pcs of T C 514400J on the printed circuit board. The THM 321020S can be as well used as 2,097,152 words by

we 510

Abstract: sm2322
Contextual Info: SM 232256Z March 1992 Rev 0 SMART Modular Technologies SM232256Z 8MBit 256Kx32 CMOS Fast SRAM Module General Description Features The SM232256Z is a high performance, 8-megabit static RAM module organized as 256K words by 32 bits in a 64-pin ZIP memory module package. The module utilizes

THM321020

Contextual Info: THM321020S-80, 10 THM321020SG-80, 10 1,048,576 W O RDS X 32 BIT D Y N A M IC RAM M O D U LE PRELIMINARY DESCRIPTION The THM321020S is a 1,048,576 words by 32 bits dynamic RAM module which assembled 8 pcs of TC514400J on the printed circuit board. The THM321020S can be as well used as 2,097,152 words by

Contextual Info: 512KBit 16K x 32 General S M 33216 CMOS Fast SRAM Description Features The SM33216 is a high performance, 512kilobit static RAM module organized as 16K words by 32 bits, in a 64-pin, single-in-line memory module (SIMM) package. The module utilizes eight 16Kx4 high speed static RAM

Contextual Info: MOTOROLA SEM ICO NDUCTO R TECHNICAL DATA MCM32256 MCM32L256 256K x 32 Bit Dynamic Random Access Memory Module T h e M C M 3 2 2 5 6 S is a 8 M , d y n a m ic ra n d o m a c c e s s m e m o ry D R A M m o d u le o r ­ g a n iz e d a s 2 6 2 ,1 4 4 x 3 2 b its . T h e m o d u le is a 7 2 - le a d s in g le - in - lin e m e m o r y m o d u le

TM497BBK32S

Abstract: TM893CBK32 TM893CBK32S TM497BBK32 128m simm 72 pin K3270
Contextual Info: bZE D • f l ^ b l 7 2 S □DfiDâk.3 LE? B T I I S TM497BBK32, TM497BBK32S 4194 304 BY 32-BIT DYNAMIC RAM MODULE TM893CBK32, TM893CBK32S 8 388 608 BY 32-BIT DYNAMIC RAM MODULE INSTR ASIC/M EM O RY Organization TM497BBK32 . . . 4 194 304 x 32 TM893CBK32 . . . 8 388 608 x 32

Contextual Info: G M M 7 3 2 8 1 1 O C S /S G -6 /7 /8 LG Semicon Co.,Ltd. Description The GMM7328110CS/SG is an 8M x 32 bits Dynamic RAM MODULE which is assembled 16 pieces o f 4M x 4bit EDO DRAMs in 24 26 pin SOJ package on both sides the printed circuit board with decoupling

Contextual Info: GMM732121OCNS/SG-6/7/8 LG Semicon Co., Ltd. 1,048,576 WORDS x 32 B IT CMOS DYNAMIC RAM MODULE Features Description The G M M 732121OCNS/SG is an 1M x 32 bits Dynamic RAM MODULE w hich is assembled 2 pieces o f 1M x 16bit EDO DRAMs in 42 pin SOJ package on single

Contextual Info: GMM7321010CS/SG-60/70/80 LG Semicon Co.,Ltd. 1,048,576 WORDS x 32 BIT CMOS EDO DYNAMIC RAM MODULE Features Description The G M M 7321010CS/SG is an IM x 32 bits Dynamic RAM M ODULE which is assembled 8 pieces o f 1M x 4bit EDO DRAM s in 20/26 pin SOJ package on single

diagram power supply LG 32 lh 35 fr

Abstract: GMM732211
Contextual Info: GMM7322110CMS/SG-6/7/8 L G S e m ic o n C o .,L td . Description 2,097,152 WORDS x 32 BIT CMOS EDO DYNAMIC RAM MODULE Features The GMM7322110CMS/SG is a 2M x 32 bits Dynamic RAM MODULE which is assembled 4 pieces o f 2M x 8bit EDO DRAMs in 28 pin SOJ package on single sides the printed circuit board